Vishay DG2034DQ Single 4:1 low ron multiplexer Datasheet

DG2034
Vishay Siliconix
New Product
Single 4:1 Low rON Multiplexers
FEATURES
D
D
D
D
D
D
Low Voltage Operation (1.8 to 5.5 V)
Low On-Resistance - rDS(on): 4 W
Off-Isolation and Crosstalk: - 55 dB @ 10 MHz
Fast Switch - 25 ns tON
Low Charge Injection - QINJ: 4.7 pC
Low Power Consumption - 4 mW
BENEFITS
APPLICATIONS
D High Accuracy
D High Bandwidth
D TTL and Low Voltage Logic
Compatibility
D Low Power Consumption
D Reduced PCB Space
D Mixed Signal Routing
D Portable and Battery Operated
Systems
D Low Voltage Data Acquisition
D Modems
D PCMCIA Cards
DESCRIPTION
The DG2034 is a low voltage, low rON, high bandwidth single
4 to 1 analog multiplexer designed for high performance
switching of analog and video signals. Combining low power;
fast switching; low on-resistance, flatness and matching; and
small physical size, the DG2034 is ideal for portable and
battery applications.
Built on Vishay Siliconix’s low voltage CMOS process, the
DG2034 has an epitaxial layer which prevents latchup.
Break-before-make is guaranteed.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
12-Pin QFN (3 X 3 mm)
A0
NC
A1
12
11
10
MSOP-10
Logic
S1
S2
9
1
GND
2
8
COM
S3
3
7
S4
4
5
6
EN
NC
V+
10
A1
2
9
S2
GND
3
8
COM
S3
4
7
S4
EN
5
6
V+
A0
1
S1
Logic
Top View
Top View
TRUTH TABLE
A1
A0
EN
ON Switch
X
X
0
None
0
0
1
S1
0
1
1
S2
1
0
1
S3
1
1
1
S4
ORDERING INFORMATION
Temp Range
-40
40 to 85°C
Document Number: 72418
S -31808—Rev. A, 01-Sept-03
Package
Part Number
MSOP-10
DG2034DQ
12-Pin QFN (3 x 3 mm)
DG2034DN
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DG2034
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
AX, EN, SX, COMa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . #50 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . #100 mA
(Pulsed at 1ms, 10% duty cycle)
Power Dissipation (Package)b
QFN-12 (3 x 3 mm)c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW
MSOP-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Notes:
a. Signals on SX, DX, EN or AX exceeding V+ or V- will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mV/_C above 70_C.
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Parameter
Limits
-40 to 85_C
Tempa
Minc
VANALOG
Full
0
rON
Room
Full
4
7
9
Room
0.1
0.3
Symbol
V+ = 3 V, "10%, VAL = 0.4, VAH = 2.0 Ve
Typb
Maxc
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON Match
rON
DrON
Flatness d, f
Off Leakage
Currentg
V+ = 2.7 V, VCOM = 0.5 V/1.5 V/2.0 V
IS = 10 mA
rON Flatness
Room
0.3
1.5
IS(off)
Room
Full
-1
-10
0.3
1
10
Room
Full
-1
-10
0.3
1
10
0.3
1
10
V+ = 3.3 V, VS = 1 V / 3 V
VCOM = 3 V / 1 V, VEN = 0 V
COM Off Leakage Currentg
ICOM(off)
Channel-On Leakage Currentg
ICOM(on)
V+ = 3.3 V
VCOM = VS = 1 V / 3 V
Room
Full
-1
-10
IA or IEN
VA/EN = 0 or V+, See Truth Table
W
nA
Digital Control
Input Currentd
Full
-1.0
Input High Voltaged
VAH or VENH
Full
2.0
1.0
Input Low Voltaged
VAL or VENL
Full
Turn-On Time
tON
Room
Full
25
35
45
Turn-Off Time
tOFF
Room
Full
15
25
35
Room
10.5
0.4
mA
V
Dynamic Characteristics
Break-Before-Make Timed
VS = 1.5 V, RL = 300 W
tD
Transition Time
ttrans
VS = 1.5 V/0 V, VS = 0 V/1.5 V, RL = 300 W
Room
Full
30
Charge Injectiond
QINJ
CL = 1 nF, Vgen = 0 V, Rgen = 0 W
Off Isolationd
Off-Isolation
OIRR
Channel to Channel Crosstalkd
Channel-to-Channel
XTALK
Off Capacitanced
CS(off)
COM Off Capacitanced
CCOM(off)
COM On Capacitanced
CCOM(on)
RL = 50 W,
W CL = 5 pF
RL = 50 W,
W CL = 5 pF
Room
-4.7
f = 1 MHz
Room
-73
f = 10 MHz
Room
-54
f = 1 MHz
Room
-77
f = 10 MHz
Room
-59
Room
14
Room
46
Room
67
V+ = 2.7 V,, f = 1 MHz
ns
45
55
pC
dB
pF
p
Power Supply
Power Supply Range
V+
Power Supply Currentd
I+
2.7
V+ = 3.3 V, VA/EN = 0 or 3.3 V, See Truth Table
Full
3.3
V
1.0
mA
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, not subjected to production test.
e. VA, EN = input voltage to perform proper function.
f.
Difference of min and max values.
g. Guaranteed by 5 V testing.
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Document Number: 72418
S -31808—Rev. A, 01-Sept-03
DG2034
Vishay Siliconix
New Product
SPECIFICATIONS (V+ = 5 V)
Limits
Test Conditions
Otherwise Unless Specified
Parameter
V+ = 5 V, "10%, VAL = 0.8 or VAH = 2.4 Ve
-40 to 85_C
Typb
Maxc
Uni
t
V+
V
Room
Full
3
5.5
7
Room
0.16
0.5
Tempa
Minc
VANALOG
Full
0
rON
Symbol
Analog Switch
Analog Signal Ranged
On-Resistance
rON Match
rON Flatness d, f
Off Leakage Current
DrON
V+ = 4.5 V, VCOM = 1.5 V/2.5 V/3.5 V
IS = 10 mA
rON Flatness
Room
0.6
1.5
IS(off)
Room
Full
-1
-10
0.5
1
10
Room
Full
-1
-10
0.5
1
10
0.5
1
10
V+ = 5.5 V, VS = 1 V / 4.5 V
VCOM = 4.5 V / 1 V, VEN = 0 V
COM Off Leakage Current
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V+ = 5.5 V, VCOM = VS = 1 V / 4.5 V
Room
Full
-1
-10
IAH or IENH
VA or VEN = 0 or V+, See Truth Table
W
nA
Digital Control
Input Currentd
Full
-1.0
Input High Voltaged
VAH or VENH
Full
2.4
1.0
Input Low Voltaged
VAL or VENL
Full
Turn-On Time
tON
Room
Full
18
30
40
Turn-Off Time
tOFF
Room
Full
12
20
30
Room
10.5
Room
Full
25
0.8
mA
V
Dynamic Characteristics
Break-Before-Make Timed
VS = 3.0 V, RL = 300 W
tD
Transition Time
ttrans
Off-Isolation
Off
Isolationd
OIRR
RL = 50 W,
W CL = 5 pF
Channel to Channel Crosstalkd
Channel-to-Channel
XTALK
RL = 50 W,
W CL = 5 pF
Charge Injectiond
QINJ
Off Capacitanced
CS(off)
COM Off Capacitanced
CCOM(off)
COM On Capacitanced
CCOM(on)
VS = 3 V/0 V, VS = 0 V/3 V, RL = 300 W
f = 1 MHz
Room
-73
f = 10 MHz
Room
-53.5
f = 1 MHz
Room
-77
f = 10 MHz
Room
-60.2
Room
-4.4
Room
13
Room
43
Room
64
CL = 1 nF, Vgen = 0 V, Rgen = 0 W
V+ = 5.0 V, f = 1 MHz
ns
40
50
dB
pC
pF
p
Power Supply
Power Supply Range
V+
Power Supply Current
I+
4.5
V+ = 5.5 V, VA/EN = 0 or 5.5 V, See Truth Table
Full
5.5
V
1.0
mA
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, not subjected to production test.
e. VA, EN = input voltage to perform proper function.
f.
Difference of min and max values.
Document Number: 72418
S -31808—Rev. A, 01-Sept-03
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DG2034
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
12
rON vs. Analog Voltage and Temperature
5.0
4.5
8
rON - On-Resistance (W)
rON - On-Resistance (W)
10
V+ = 1.8 V
V+ = 2.7 V
6
V+ = 3.3 V
4
V+ = 5.5 V
V+ = 2.7 V
4.0
C
3.5
A
2.5
A
1.5
A = 85_C
B = 25_C
C = -40_C
0.5
0
0
1
2
3
4
5
0.0
0.0
6
0.5
1.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Supply Current vs. Input Switching Frequency
Supply Current vs. Temperature
10 m
1m
I+ - Supply Current (A)
V+ = 5.5 V
I+ - Supply Current (pA)
1.5
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
10000
B
2.0
1.0
2
V+ = 4.5 V
C
B
3.0
1000
V+ = 5.5 V
100 m
10 m
1m
100 n
10 n
1n
10
100
-75
-50
-25
0
25
50
75
100
125
Leakage Current vs. Temperature
400
V+ = 5.5 V
VCOM = 4.5 V
VS = 1.0 V
200
IS( off )
100
10
-25
0
25
50
Temperature (_C)
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1M
10 M
Leakage vs. Analog Voltage
V+ = 5.5 V
-200
-400
ICOM(on)
IS(off)
-600
-800
ICOM(off)
-1200
ICOM( off )
-50
100 K
-1000
ICOM( on )
1
-75
10 K
0
Leakage Current (pA)
Leakage Current (pA)
1000
1K
Input Switching Frequency (Hz)
Temperature (_C)
10000
100
75
100
125
-1400
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VS - Analog Voltage (V)
Document Number: 72418
S -31808—Rev. A, 01-Sept-03
DG2034
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature
Insertion Loss, Off -Isolation
Crosstalk vs. Frequency
20
30
Loss, OIRR, X TALK (dB)
t ON , t OFF - Switching Time (ns)
Loss
0
25
tON V+ = 3.3 V
20
tON V+ = 5.5 V
15
tOFF V+ = 3.3 V
10
tOFF V+ = 5.5 V
5
-20
-40
OIRR
-60
XTALK
-80
V+ = 3.3 V
RL = 50 W
-100
0
-80 -60 -40 -20
-120
0
20
40
60
80 100 120 140
10 k
100 k
1M
Switching Threshold vs. Supply Voltage
2.2
100 M
1G
Charge Injection vs. Analog Voltage
3
Q - Charge Injection (pC)
2
VT - Switching Threshold (V)
10 M
Frequency (Hz)
Temperature (_C)
1.8
1.4
1.0
V+ = 5.5 V
1
0
-1
-2
V+ = 3.3 V
-3
V+ = 1.8 V
-4
0.6
CL = 1 nF
-5
0.2
1
2
3
4
5
-6
6
0
1
V+ - Supply Voltage (V)
35
2
3
4
5
6
VCOM - Analog Voltage (V)
Transistion Time vs. Temperature
RL = 300 W
30
tTRANS- , V+ = 3.0 V
tTRANS+, V+ = 3.3 V
25
tTRANS- , V+ = 5.5 V
20
15
tTRANS+, V+ = 5.5 V
10
-80 -60 -40 -20
0
20
40
60
80 100 120 140
Temperature (_C)
Document Number: 72418
S -31808—Rev. A, 01-Sept-03
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DG2034
Vishay Siliconix
New Product
TEST CIRCUITS
V+
Switch
Input
VIN
Logic
Input
COM
tOFF
VOUT
IN
RL
300 W
GND
VOUT
CL
35 pF
Note:
RL
0.9 x VOUT
90%
0V
Switch
Output
CL (includes fixture and stray capacitance)
VOUT = VIN
tr <5 ns
tf <5 ns
50%
VINL
Switch
Output
V+
NO or NC
VINH
tON
Logic input waveform is inverted for switches that
have the opposite logic sense control
RL + rON
Figure 2. Switching Time
V+
V+
VNO
VNC
COM
NO
VINH
Logic
Input
tr <5 ns
tf <5 ns
VINL
VO
NC
RL
300 W
IN
CL
35 pF
VNC = VNO
VO
GND
Switch
Output
90%
0V
tD
tD
CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make
+15 V
V+
VS1
VS2
NO or NC
COM
VO
Logic VINH
Input
VINL
NC or NO
RL
300 W
IN
tr <5 ns
tf <5 ns
50%
tTRANS+
CL
35 pF
tTRANS-
VS1
V01
GND
90%
Switch
Output
CL (includes fixture and stray capacitance)
VO = VS
RL
VS2
V02
10%
RL + rON
Figure 4. Transition Time
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Document Number: 72418
S -31808—Rev. A, 01-Sept-03
DG2034
Vishay Siliconix
New Product
TEST CIRCUITS
DVO
V+
VO
V+
Rg
COM
NO or NC
IN
Vg
IN
VO
OFF
ON
CL
1 nF
OFF
Q = DVO x CL
GND
IN dependent on switch configuration Input polarity determined
by sense of switch.
VIN = 0 - V+
Figure 5. Charge Injection
V+
C
V+
VS
VIN
NO or NC
COM
Rg = 50 W
50 W
IN
0 V or 2.4 V
NC or NO
VOUT
GND
XTALK Isolation = 20 log
VOUT
C = RF bypass
VIN
Figure 6. Crosstalk
V+
V+
C
C
V+
NO or NC
COM
COM
Rg = 50 W
0V, 2.4 V
Meter
RL
50 W
IN
IN
0 V, 2.4 V
GND
NO or NC
GND
Off Isolation = 20 log
C = RF Bypass
Figure 7. Off Isolation
Document Number: 72418
S -31808—Rev. A, 01-Sept-03
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
VCOM
VNO/NC
Figure 8. Source/Drain Capacitances
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