Vishay DG271B High-speed quad monolithic spst cmos analog switch Datasheet

DG271B
Vishay Siliconix
High-Speed Quad Monolithic SPST CMOS Analog Switch
FEATURES
D
D
D
D
D
BENEFITS
Fast Switching tON: 55 ns
Low Charge Injection: 5 pC
Low rDS(on): 32 W
TTL/CMOS Compatible
Low Leakage: 50 pA
APPLICATIONS
D Fast Settling Times
D Reduced Switching Glitches
D High Precision
D
D
D
D
D
D
D
D
High-Speed Switching
Sample/Hold
Digital Filters
Op Amp Gain Switching
Flight Control Systems
Automatic Test Equipment
Choppers
Communication Systems
DESCRIPTION
The DG271B high speed quad single-pole single-throw analog
switch is intended for applications that require low
on-resistance, low leakage currents, and fast switching
speeds.
Built on the Vishay Siliconix’ proprietary high voltage silicon
gate process to achieve superior on/off performance, each
switch conducts equally well in both directions when on, and
blocks up to the supply voltage when off. An epitaxial layer
prevents latchup.
The DG271B has a redesign internal regulator which improves
start-up over the DG271.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product with
the lead (Pb)-free device terminations. For analog switching
products manufactured with 100% matte tin device
terminations, the lead (Pb)-free “—E3” suffix is being used as
a designator.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line and SOIC
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V−
4
13
V+
GND
5
12
NC
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
TRUTH TABLE
Logic
Switch
0
ON
1
OFF
Logic “0” v 0.8
08V
2.4
4V
Logic “1” w 2
Top View
ORDERING INFORMATION
Document Number: 70966
S-42137—Rev. B, 15-Nov-04
Temp Range
Package
0 to 70_C
16-Pin Plastic DIP
−40
40 to 85_C
16 Pin Narrow SOIC
16-Pin
Part Number
DG271BCJ—E3
DG271BDY—E3
DG271BDY-T1—E3 (with Tape and Reel)
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DG271B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . (V−) −2 V to (V+) +2 V or
20 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(DY Suffix) . . . . . . . . . . . . . . . . . . . −65 to 150_C
(CJ Suffix) . . . . . . . . . . . . . . . . . . . −65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Plastic Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V− will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa
C, D Suffix
Test Conditions
Unless Specified
Parameter
0 to 70_C
−40 to 85_C
V+ = 15 V,
V
V V−
V = −15
15 V
VIN = 2.4 V, 0.8 Vf
Tempb
Mind
VANALOG
Full
−15
rDS(on)
IS = 1 mA, VD = "10 V
Room
Full
Symbol
Typc
Maxd
Unit
Analog Switch
Analog Signal Rangee
Drain-Source On-Resistance
ID(off)
Channel On Leakage Current
ID(on) +
IS(on)
V
50
75
W
Room
Full
−1
−20
"0.05
1
20
Room
Full
−1
−20
"0.05
1
20
VS = VD = "14 V
Room
Full
−1
−20
"0.05
1
20
IS(off)
Switch Off Leakage Current
15
32
VD = "14 V
V, VS = #14 V
nA
Digital Control
Input Current with Voltage High
IINH
Input Current with Voltage Low
IINL
VIN = 2 V
Full
−1
0.010
1
VIN = 15 V
Full
−1
0.010
1
VIN = 0 V
Full
−1
0.010
1
Room
Full
55
65
80
Room
Full
50
65
80
Room
−5
8
mA
m
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injection
Q
VS = "10 V
See Figure 3
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 W
See Figure 3
Source Off Capacitance
CS(off)
CD(off)
VS = 0 V, VIN = 5 V
f = 1 MHz
Room
Drain Off Capacitance
Room
8
Channel On Capacitance
CD(on)
VD = VS = 0 V, VIN = 0 V
Room
30
Off Isolation
OIRR
85
XTALK
CL = 10 pF, RL = 1 kW
f = 100 kHz
See Figures 4 and 5
Room
Crosstalk
Room
100
Room
Full
5.5
ns
pC
pF
p
dB
Supply
Positive Supply Current
I+
Negative Supply Current
I−
All Channels On or Off
VIN = 5 V or 0 V
Room
Full
−6
−8
−3.4
7.5
9
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
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Document Number: 70966
S-42137—Rev. B, 15-Nov-04
DG271B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
60
50
"5 V
40
"10 V
30
"15 V
20
"20 V
10
−8
−4
0
4
8
12
16
V+ = 15 V
V− = −15 V
40
125_C
85_C
30
25_C
20
0_C
−55_C
10
0
−20 −16 −12
rDS(on) vs. VD and Temperature
50
rDS(on) − Drain-Source On-Resistance (W)
rDS(on) − Drain-Source On-Resistance (W)
70
0
−15
20
−10
−5
VD − Drain Voltage (V)
0
5
10
15
VD − Drain Voltage (V)
Input Switching Threshold vs. Supply Voltage
Leakage Currents vs. Temperature
10 nA
2.5
ID(on)
2
Leakage
V IN ( V )
1 nA
1.5
1
IS(off), ID(off)
100 pA
0.5
0
"4
"6
"8
"10
"12
"14 "16
10 pA
"18 "20
−55
−35
−15
Positive/Negative Supplies (V)
65
85
105
125
55
tON
50
Switching Time (ns)
50
Switching Time (ns)
45
Switching Time vs. Power Supply Voltage
Switching Times vs. Temperature
45
tOFF
40
45
tON
40
35
35
30
−55
25
Temperature (_C)
55
V+ = 15 V
V− = −15 V
5
tOFF
30
−25
0
25
50
Temperature (_C)
Document Number: 70966
S-42137—Rev. B, 15-Nov-04
75
100
125
"4
"6
"8
"10
"12
"14 "16
"18 "20
Supply Voltage (V)
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DG271B
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
SX
5V
Reg
V−
Level
Shift/
Drive
V+
DX
INX
GND
V−
FIGURE 1.
TEST CIRCUITS
+15 V
Logic
Input
V+
10 V
S
D
VO
IN
5V
GND
V−
RL
1 kW
CL
35 pF
Switch
Input
5V
tr <20 ns
tf <20 ns
50%
0V
VS
tOFF
VO
90%
Switch
Output VO
tON
CL (includes fixture and stray capacitance)
−15 V
VO = VS
RL
RL + rDS(on)
FIGURE 2. Switching Time
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70966.
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Document Number: 70966
S-42137—Rev. B, 15-Nov-04
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