Vishay DG2736DN-T1-E4 Low voltage, 0.6 î©, dual spdt analog switch Datasheet

DG2735/DG2736
Vishay Siliconix
Low Voltage, 0.6 Ω, Dual SPDT Analog Switch
DESCRIPTION
FEATURES
The DG2735/2736 are low voltage, low on-resistance, dual
single-pole/double-throw (SPDT) monolithic CMOS analog
switches designed for high performance switching of analog
signals. Combining low-power, high speed, low on-resistance, and small package size, the DG2735/2736 are ideal
for portable and battery power applications.
The DG2735/2736 have an operation range from 1.65 V to
4.3 V single supply. The DG2735 has two separate control
pins with for the separated two SPDT switched. The DG2736
has an EN pin. All switches are at high impedance mode
when the EN is high.
The DG2735/2736 are guaranteed 1.65 V logic compatible,
allowing the easy interface with low voltage DSP or MCU
control logic and ideal for one cell Li-ion battery direct power.
The switch conducts signals within power rails equally well in
both directions when on, and blocks up to the power supply
level when off. Break-before-make is guaranteed.
The DG2735/2736 are built on Vishay Siliconix's sub micron
CMOS low voltage process technology and provides greater
than 300 mA latch-up protection, as tested per JESD78.
As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead
(Pb)-free device terminations. DG2735/2736 are offered in a
miniQFN package. The miniQFN package has a nickel-palladium-gold device termination and is represented by the lead
(Pb)-free "-E4" suffix. The nickel-palladium-gold device terminations meet all JEDEC standards for reflow and MSL ratings.
•
•
•
•
Low Voltage Operation (1.65 V to 4.3 V)
Low On-Resistance - rON: 0.6 Ω at 2.7 V
Fast Switching: TON = 55 ns at 2.7 V
TOFF = 40 ns at 2.7 V
• Latch-Up Current > 300 mA (JESD78)
RoHS
COMPLIANT
BENEFITS
•
•
•
•
Reduced Power Consumption
High Accuracy
Reduce Board Space
TTL/1.65 V Logic Compatible
APPLICATIONS
•
•
•
•
•
•
Cellular Phones
Speaker Headset Switching
Audio and Video Signal Routing
PCMCIA Cards
Battery Operated Systems
Portable media player
Handheld test instruments
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
8
NC1
COM2
9
4
IN1
NO2
10
3
COM1
1
5
NC1
COM2
9
4
IN1
NO2
10
3
COM1
NO1
Device Marking: Ax for DG2735
Device Marking: Bx for DG2736
x = Date/Lot Traceability Code
(Top View)
Pin 1
GND
8
Pin 1: LONG LEAD
Ax
6
EN
2
V+
Pin 1: LONG LEAD
7
1
2
NO1
6
5
IN2
NC2
GND
7
DG2736
miniQFN-10L
V+
NC2
DG2735
miniQFN-10L
(Top View)
Bx
or
Pin 1
Note: Pin 1 has long lead
Document Number: 74420
S-70327–Rev. B, 26-Feb-07
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1
DG2735/DG2736
Vishay Siliconix
TRUTH TABLE
ORDERING INFORMATION
Logic
EN (DG2736 only)
NC1, 2
NO1, 2
0
1
OFF
OFF
1
1
OFF
OFF
0
0
ON
OFF
1
0
OFF
ON
Temp Range
Package
- 40 to 85°C
miniQFN10
Part Number
DG2735DN-T1-E4
DG2736DN-T1-E4
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
V+
- 0.3 to 5.0
Reference to GND
V
- 0.3 to (V+ + 0.3)
IN, COM, NC, NOa
Current (Any terminal except NO, NC or COM)
30
mA
Continuous Current (NO, NC, or COM)
± 250
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 500
Storage Temperature (D Suffix)
- 65 to 150
°C
Power Dissipation (Packages)b
miniQFN10c
208
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/C above 70 °C.
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Document Number: 74420
S-70327–Rev. B, 26-Feb-07
DG2735/DG2736
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Limits
- 40 to 85 °C
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %,VIN = 0.4 V or 1.65 Ve
Tempa
Minb
rDS(on)
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
Vanalog
V+ = 2.7 V, INO/NC = 100 mA, VCOM = 0.5 V
V+ = 2.7 V, INO/NC = 100 mA, VCOM = 1.5 V
V+ = 2.7 V, INO/NC = 100 mA, VCOM = 0.5 V
On-Resistance
rDS(on)
V+ = 2.7 V, INO/NC = 100 mA, VCOM = 1.5 V
V+ = 4.3 V, INO/NC = 100 mA, VCOM = 0.9 V
V+ = 4.3 V, INO/NC = 100 mA, VCOM = 2.5 V
V+ = 4.3 V, INO/NC = 100 mA, VCOM = 0.9 V
V+ = 4.3 V, INO/NC = 100 mA, VCOM = 2.5 V
ΔrON
d
rON Match
rON resistance flatnessd
rON flatness
INO/NC(off)
Switch Off Leakage
Current
ICOM(off)
Channel-On Leakage
Current
ICOM(on)
V+ = 2.7 V, INO/NC = 100 mA,
VCOM = 0.5 V, 1.5 V
V+ = 4.3 V, INO/NC = 100 mA,
VCOM = 0.9 V, 2.5 V
V+ = 2.7 V, INO/NC = 100 mA,
VCOM = 0.5 V, 1.5 V
V+ = 4.3 V, VNO/NC = 0.3 V/4.0 V,
VCOM = 4.0 V/0.3 V
V+ = 4.3 V, VNO/NC = VCOM = 4.0 V/0.3 V
Room
0.5
Full
0.5
0.4
Room
0.3
Full
0.5
Room
0.06
Room
0.6
0.5
Ω
0.08
0.15
Room
-2
2
Full
- 10
10
Room
-2
2
Full
- 10
10
Room
Full
-5
5
- 20
20
1.65
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Full
CIN
IINL or IINH
Input Current
0.4
VIN = 0 or V+
6
Full
-1
Room
1
V
pF
1
µA
Dynamic Characteristics
Break-Before-Make Timee
Turn-On Time
e
tBBM
tON
Turn-Off Timee
tOFF
Enable Turn-On Timee
DG2736 (EN)
V+ = 3.6 V, VNO, VNC = 1.5 V, RL = 50 Ω,
CL = 35 pF
OIRR
Crosstalkd
XTALK
3dB bandwithd
d
Channel On Capacitance
Document Number: 74420
S-70327–Rev. B, 26-Feb-07
Room
CNO(on)
CNC(on)
35
50
RL = 50 Ω, CL = 5 pF
Room
ns
78
80
35
Full
Room
58
60
Full
RL = 50 Ω, CL = 5 pF, f = 100 kHz
78
80
Full
CNO(off)
CNC(off)
d
Room
Room
tOFF(EN)
Off-Isolationd
5
50
Full
tON(EN)
Enable Turn-Off Timee
DG2736 (EN)
NO, NC Off Capacitance
Room
58
60
- 70
- 70
50
dB
MHz
55
VIN = 0 V, or V+, f = 1 MHz
Room
55
130
pF
130
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DG2735/DG2736
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Limits
- 40 to 85 °C
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %,VIN = 0.4 V or 1.65 Ve
Tempa
VIN = 0 or V+
Full
Minb
Typc
Maxb
Unit
Power Supply
Power Supply Range
V+
Power Supply Current
I+
1.65
4.3
V
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74420
S-70327–Rev. B, 26-Feb-07
DG2735/DG2736
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.6
2.4
V+ = 1.5 V
2.0
r ON - On-Resistance (Ω)
+ 85 °C
TA = 25 °C
INO/NC = 100 mA
0.5
r ON - On-Resistance (Ω)
2.2
1.8
1.6
1.4
V+ = 1.8 V
1.2
1.0
0.8
V+ = 2.7 V
V+ = 3.0 V V+ = 3.6 V
0.6
0.4
+ 25 °C
0.3
- 40 °C
0.2
V+ = 2.7 V,
IS = 100 mA NO
0.1
0.4
0.2
V+ = 4.3 V
0.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0 3.5
4.0 4.5
0.0
5.0
0.5
1.0
VCOM - Analog Voltage (V)
rON vs. VCOM and Supply Voltage
2.0
2.5
3.0
rON vs. Analog Voltage and Temperature
0.6
1.0
+ 85 °C
0.9
0.5
0.8
+ 25 °C
r ON - On-Resistance (Ω)
r ON - On-Resistance (Ω)
1.5
VCOM - Analog Voltage (V)
0.4
0.3
- 40 °C
0.2
0.7
0.6
0.5
0.3
+ 25 °C
0.2
V+ = 2.7 V,
IS = 100 mA NC
0.1
+ 85 °C
0.4
V+ = 4.3 V,
IS = 100 mA NO
0.1
0.0
- 40 °C
0.0
0
0.5
1
1.5
2
2.5
3
0.0
0.5
1.0
VCOM - Analog Voltage (V)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VCOM - Analog Voltage (V)
rON vs. Analog Voltage and Temperature
rON vs. Analog Voltage and Temperature
100000
1.0
V+ = 4.3 V
0.9
10000
I+ - Supply Current (pA)
r ON - On-Resistance (Ω)
0.8
0.7
0.6
0.5
+ 25 °C
+ 85 °C
0.4
0.3
0.2
1000
100
10
- 40 °C
V+ = 4.3 V,
IS = 100 mA NC
0.1
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1
- 60
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
VCOM - Analog Voltage (V)
rON vs. Analog Voltage and Temperature
Document Number: 74420
S-70327–Rev. B, 26-Feb-07
Supply Current vs. Temperature
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DG2735/DG2736
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100000
25
V+ = 4.3 V
tON, t OFF - Switching Time (ns)
t ON V+ = 2.7 V
Leakage Current (pA)
10000
1000
ICOM(on)
ICOM(off)
100
INC(off)
10
1
- 60
- 40
- 20
0
20
40
60
80
20
15
t ON V+ = 4.3 V
10
t OFF V+ = 4.3 V
t OFF V+ = 2.7 V
5
0
- 60
100
- 40
- 20
0
Temperature (°C)
5
80
100
LOSS
0
3
- 10
2
LOSS, OIRR, XTALK (dB)
Leakage Current (pA)
60
10
4
ICOM(on)
1
0
-1
-2
ICOM(off)
INO(off)
-4
-5
0.0
40
Switching Time vs. Temperature
Leakage Current vs. Temperature
-3
20
Temperature (°C)
- 20
- 30
OIRR
- 40
- 50
- 60
XTALK
DG2735/36
V+ = 3.0 V
R L = 50 Ω
- 70
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
- 80
5.0
300 K
1 MHz
10 MHz
100 MHz
1 GHz
Frequency (Hz)
VCOM, VNO, VNC - Analog Voltage (V)
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
Leakage vs. Analog Voltage
VT - Switching Threshold (V)
2.0
1.5
1.0
0.5
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
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Document Number: 74420
S-70327–Rev. B, 26-Feb-07
DG2735/DG2736
Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
V+
NO or NC
Switch
Input
COM
VINH
tr < 5 ns
tf < 5 ns
50 %
VINL
Switch Output
VOUT
0.9 x V OUT
Logic
Input
IN
RL
50 Ω
GND
CL
35 pF
Switch
Output
0V
tON
tOFF
0V
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT = VCOM
(R L
RL
+ R
ON
)
Figure 1. Switching Time
V+
Logic
Input
V+
VNO
VNC
COM
NO
VO
VINH
tr < 5 ns
tf < 5 ns
VINL
NC
RL
50 Ω
IN
CL
35 pF
GND
VNC = V NO
VO
90 %
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
Document Number: 74420
S-70327–Rev. B, 26-Feb-07
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DG2735/DG2736
Vishay Siliconix
TEST CIRCUITS
V+
Rgen
Δ VOUT
V+
VOUT
COM
NC or NO
VOUT
+
IN
IN
Vgen
CL = 1 nF
VIN = 0 - V+
On
Off
On
GND
Q = ΔVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
V+
V+
10 nF
10 nF
V+
V+
NC or NO
IN
COM
COM
0 V, 2.4 V
Meter
COM
IN
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
RL
NC or NO
GND
GND
Analyzer
f = 1 MHz
VCOM
Off Isolation = 20 log V
NO / NC
Figure 4. Off-Isolation
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74420.
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Document Number: 74420
S-70327–Rev. B, 26-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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