Vishay DG333ALDQ-T1-E3 Precision quad spdt analog switch Datasheet

DG333A, DG333AL
Vishay Siliconix
Precision Quad SPDT Analog Switch
DESCRIPTION
FEATURES
The DG333A, DG333AL consist of four independently
controlled single-pole double-throw analog switches. These
monolithic switch is designed to control analog signals with a
high degree of accuracy. The DG333A, DG333AL minimize
measurement errors by offering low on-resistance (25  typ),
low leakage (20 pA typ.) and low charge injection
performance. The DG333AL features micro-power operation
(< 1 µW typ.). This is ideal for battery operated systems. Pin
15 is not connected on the DG333A.
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•
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•
•
•
•
•
•
•
An improved charge injection compensation design
minimizes switching transients. These switches can handle
up to ± 22 V signals and have an improved continuous
current of 30 mA.
The DG333A, DG333AL is fabricated in Vishay Siliconix’s
proprietary HVSG-2 CMOS process, resulting in higher
speed and lower power consumption. An epitaxial layer
prevents latchup. Each switch conducts equally well in both
directions when on. When off, they block voltages up to the
power-supply levels.
± 22 V supply voltage range
TTL and CMOS compatible logic
Low on-resistance (25 )
On-resistance matched between channels (< 2 )
Flat on-resistance over analog signal range ( < 3 )
Low charge injection (1 pC)
Low leakage (0.2 nA)
Fast switching (175 ns)
Single-supply operation (5 V to 40 V)
ESD tolerance > 2 kV per 3015.x
Low power (< 1 µA) - DG333A, DG333AL
BENEFITS
•
•
•
•
•
•
•
•
Rail-to-rail analog signal range
Simple logic interface
High precision and accuracy
Minimal transients
Low distortion
Reduced power consumption
Improved reliability
Break-before-make switching action
APPLICATIONS
•
•
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•
•
•
•
•
•
Audio switching
Test equipment
Portable instrumentation
Communication systems
PBX, PABX
Computer peripherals
Mass storage systems
Switched-capacitor networks
Battery-powered systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Dual-In-Line and Wide-Body SOIC
Logic
IN1
1
20 IN4
S1
2
19 S8
D1
3
18 D4
S2
4
17 S7
V-
5
16 V+
0
1
Logic “0” 0.8 V
Logic “1” 2.4 V
6
15 VL (DG333AL Only)
S3
7
14 S6
D2
8
13 D3
S4
9
12
S5
IN2 10
11
IN3
Top View
SW2, 3, 6, 7
Normally Closed
OFF
ON
ON
OFF
ORDERING INFORMATION
Temp. Range
GND
SW1, 4, 5, 8
Normally Open
Package
20-Pin Plastic DIP
- 40 °C to 85 °C
20-Pin Wide-Body SOIC
(shipped in tubes)
Part Numbera
DG333ADJ-E3
DG333ALDJ-E3
DG333ADW-E3
DG333ALDW-E3
20-Pin Wide-Body SOIC DG333ADW-T1-E3
(shipped in tape and reel) DG333ALDW-T1-E3
DG333ADQ-T1-E3
20-Pin TSSOP
(shipped in tape and reel) DG333ALDQ-T1-E3
Note:
a. For standard tin/lead external termination, remove the "-E3" from
the ordering part number.
Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
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DG333A, DG333AL
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Voltages Referenced V+ to V-
44
GND
30
V+ to GND
Unit
V
30
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Digital Inputsa VS, VD
Current, Any Terminal
30
Peak Current S or D (Pulsed at 1 ms, 10 % Duty Cycle Max.)
100
Storage Temperature
mA
- 65 to 125
Power Dissipation (Package)b
20-Pin Plastic DIPc
890
20-Pin Wide SOICd
800
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 12 mW/°C above 75 °C.
d. Derate 10 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (Typical Channel)
V+
S2
VV+
VL
(DG333AL)
DG333A
5V
Reg
S1
Level
Shift/
Drive
INX
VV+
D
GND
V-
Figure 1.
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Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG333A, DG333AL
Vishay Siliconix
SPECIFICATIONS
Parameter
Analog Switch
Symbol
Analog Signal Ranged
VANALOG
IS = - 10 mA, VD = ± 10 V
Channel On-Resistance
RDS(on)
On-Resistance Flatness
RDS(on) Match Between Channelsf
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VIN = 2.4 V or 0.8 Ve
RDS(on)
IS = - 10 mA, VD = ± 5 V
V+ = 16.5 V, V- = - 16.5 V
IS = - 10 mA, VD = ± 10 V
VD = 15.5 V, VS = 15.5 V
V+ = 16.5 V, V- = - 16.5 V
VD = ± 15.5 V, VS(open) = ± 15.5 V
V+ = 16.5 V, V- = - 16.5 V
Limits D Suffix
- 40 °C to 85 °C
Temp.a
Min.b
Full
V-
V
Room
Hot
- 0.75
- 60
0.75
60
2.4
ID(on)
Digital Control
Input Voltage High
VINH
Full
Input Voltage Low
VINL
Full
VINH or VINL
V+
- 0.25
- 20
Channel On Leakage Current
IINL or IINH
Unit
45
90
3
5
2
4
0.25
20
IS(off)
Full
25
Max.b
Room
Full
Room
Full
Room
Full
Room
Hot
Source Off Leakage Current
Input Current
Typ.c
0.8
-1
1

nA
V
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
See switching time test circuit see figure 2
Room
175
Room
Break-Before-Make Time Delay
tD
See figure 3
Charge Injectiond
Off-Isolation
Channel-to-Channel Crosstalk
Q
CL = 10 nF, Vgen = 0 V, Rgen = 0 
Room
OIRR
RL = 75 CL = 5 pF
VD = 2.3 VRMS, f = 1 MHz
Room
72
Room
80
Off Capacitance
Channel On Capacitance
XTALK
COFF
CON
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I-
Positive Supply Current
I+
IL
Logic Supply Current
Negative Supply Current
Supply Voltage Range
Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
f = 1 MHz, VS = 0 V
DG333A: VIN = 0 or 5 V
DG333AL: VIN = 0 or 5 V, VL = 5 V
Room
Room
8
Room
12
Room
Room
145
ns
10
pC
5
dB
pF
200
-1
Room
1
Room
1
I-
Room
-1
V+/V-
Full
±4
± 22
µA
V
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG333A, DG333AL
Vishay Siliconix
SPECIFICATIONS (Unipolar Supplies)
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
TA = 25°C
Temp.a
Min.b
Full
V-
RDS(on)
IS = - 10 mA, VD = 10, 1 V
Room
IS(off)
VD = 11 V, VS(open) = 1 V
Room
0.25
ID(on)
VD = 11 V, VS(open) = 0 V
VD = 1 V, VS(open) = V+
Room
0.75
Parameter
Analog Switch
Symbol
Analog Signal Ranged
Channel On-Resistance
VANALOG
Source Off Leakage Current
Channel On Leakage Current
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
See switching time test circuit see figure 2
tD
See figure 3
Positive Supply Current
I+
DG333A: VIN = 0 or 5 V
Positive Supply Current
I+
IL
Break-Before-Make Time Delay
Limits D Suffix
- 40 °C to 85°C
Typ.c
35
Room
Max.b
Unit
V+
V
75

nA
90
Room
ns
45
Room
5
10
Power Supplies
Logic Supply Current
Positive Supply Range
DG333AL: VIN = 0 or 5 V, VL = 5 V
V+
Room
200
Room
1
Room
1
Room
1
Room
5
µA
40
V
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. VIN = input voltage to perform proper function.
f. On-resistance match and flatness are guaranteed only for bipolar supply operation.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
40
7.5 V
35
R(DS)on - On-Resistance (Ω)
R DS(on) - On-Resistance ()
35
30
10 V
25
15 V
20
20 V
15
10
- 20
- 15
- 10
-5
0
5
10
VD - Drain Voltage (V)
RDS(on) vs. VD (Dual Supply)
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15
20
125 °C
30
85 °C
70 °C
25
25 °C
20
0 °C
- 40 °C
- 55 °C
15
10
- 15
- 10
-5
0
5
10
15
VD - Drain Voltage (V)
RDS(on) vs. VD and Temperature (Dual Supply)
Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG333A, DG333AL
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
180
75
R(DS)on - On-Resistance ()
150
5V
120
90
7V
10 V
60
12 V
15 V
30
63
51
125 °C
39
85 °C
70 °C
27
25 °C
0 °C
- 40 °C
- 55 °C
0
15
0
3
6
9
12
15
0
2
4
6
8
VD - Drain V oltage (V)
VD - Drain Voltage (V)
RDS(on) vs. VD (Single Supply)
10
12
RDS(on) vs. VD and Temperature (Single Supply)
30
40
V+ = 15 V
V- = - 15 V
30
20
20
ID(off), IS(off)
Q (pC)
I (pA)
10
0
10
0
ID(on)
- 10
- 10
- 20
- 20
- 30
- 15
- 30
- 15
- 10
-5
0
5
10
15
- 10
-5
0
5
10
15
VS - Source Voltage (V)
VD or VS - Drain or Source Voltage (V)
Leakage Currents vs. Analog Voltage
Drain Charge Injection
3.5
120
V+ = 15 V, V- = - 15 V
VIN = 3 V Pulse
3.0
tON
100
t ON , t OFF (ns)
VIN (V)
2.5
2.0
1.5
80
tOFF
60
40
1.0
20
0.5
0
5
10
15
20
25
30
35
40
0
- 55 - 40 - 20
0
20
40
60
80
100
(V+)
Temperature (°C)
Input Switching Threshold vs. Supply Voltages
Switching Time vs. Temperature
Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
120
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DG333A, DG333AL
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
140
80
120
Source 2
70
t ON, t OFF (ns)
100
Source 1
(dB)
80
60
40
tOFF
40
± 10
0
100
10K
1M
100K
f - Frequency (Hz)
1K
60
50
V+ = 15 V
V- = - 15 V
20
tON
V- = 0 V
VIN = 3 V
10M
100M
± 11
± 12
± 13
± 14
± 15
± 16
Supply Voltage (V)
Crosstalk and Off Isolation vs. Frequency
Switching Time vs. Supply Voltages
10 mA
130
V+ = 15 V, V- = - 15 V
VIN = 5 V, 50 % D-Cycle
120
110
1 mA
tON
90
V- = 0 V
VIN = 3 V
80
I SUPPLY
t ON , t OFF (ns)
100
100 µA
I+, I10 µA
70
IL
60
1 µA
50
tOFF
40
100 nA
100
30
10
11
12
13
14
15
16
1K
10K
100K
1M
10M
f - Frequency (Hz)
V+ Supply Voltage (V)
Switching Time vs. V+
Power Supply Currents vs. Switching Frequency
1 µA
100 nA
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 V
I SUPPLY
10 nA
I+, I-
1 nA
100 pA
IGND
10 pA
1 pA
0.1 pA
- 55 - 40
- 20
0
20
40
60
80
100
120
Temperature (°C)
Supply Current vs. Temperature
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Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG333A, DG333AL
Vishay Siliconix
TEST CIRCUITS
tr < 20 ns
tf < 20 ns
+ 15 V
3V
50 %
VIN
V+
+ 10 V
- 10 V
0V
S1
tON
tOFF
D1
VO
S2
RL
300 Ω
IN1
tOPEN
+ 10 V
50 %
CL
35 pF
0V
VO
50 %
3V
- 10 V
V-
GND
tOFF
tON
tOPEN
- 15 V
Repeat Test for IN2, IN3 and IN4
Figure 2. Switching Time
+ 15 V
Logic
Input
V+
S1
10 V
VO1
IN
RL1
V-
GND
90 %
VO2
S2
RL2
50 %
0V
VD
VO1
D
3V
0V
VD
CL1
90 %
VO2
CL2
0V
tD
tD
- 15 V
RL = 300 Ω, CL = 35 pF
CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make
+ 15 V
C
V+
D
0 V, 2.4 V
IN
S
RL
100 Ω
Analyzer
CH A
CH B
GND
V-
C
VS
Off Isolation = 20 log V
D
C = RF Bypass
- 15 V
Figure 4. Off Isolation
Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
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DG333A, DG333AL
Vishay Siliconix
TEST CIRCUITS
+ 15 V
C
V+
D1
2.4 V
IN1
2.4 V
IN2
S8
RL
100 Ω
50 W
S1
D4
GND
V-
Analyzer
CH A
CH B
C
- 15 V
Figure 5. Crosstalk
+ 15 V
C
V+
D
Meter
IN
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
S
GND
V-
f = 1 MHz
C
- 15 V
Figure 6. Capacitances
+ 15 V
Rg
V+
D
S
IN
Vg
Δ VO
VO
CL
10 nF
3V
GND
VO
IN
On
Off
On
VQ = Δ VO x CL
- 15 V
Figure 7. Charge Injection
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Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
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DG333A, DG333AL
Vishay Siliconix
APPLICATIONS
Band-Pass Switched Capacitor Filter
Single-pole double-throw switches are a common element
for switched capacitor networks and filters. The fast
switching times and low leakage of the DG333A, DG333AL
allow for higher clock rates and consequently higher filter
operating frequencies. Figure 8 shows two capacitors being
switched.
The DG333A, DG333AL is capable of switching four
capacitors.
+ 15 V
V+
S1
D1
S2
IN1
ein
S8
D4
S7
IN4
Clock
1/
2
DG333A/333AL
GND
V-
- 15 V
+
-
eout
Figure 8. Band-Pass Switched Capacitor Filter
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70803.
Document Number: 70803
S11-1762-Rev. D, 05-Sep-11
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Package Information
Vishay Siliconix
PDIP: 20ĆLEAD
20
19
18
17
16
15
14
13
12
11
E1
1
2
3
4
5
6
7
8
9
E
10
D
S
Q1
A
A
A1
L
15°
MAX
C
B1
e1
B
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
Q1
S
MILLIMETERS
Min
Max
eA
INCHES
Min
Max
3.81
5.08
0.150
0.200
0.38
1.27
0.015
0.050
0.38
0.51
0.015
0.020
0.89
1.65
0.035
0.065
0.20
0.30
0.008
0.012
24.89
26.92
0.980
1.060
7.62
8.26
0.300
0.325
5.59
7.11
0.220
0.280
2.29
2.79
0.090
0.110
7.37
7.87
0.290
0.310
3.175
3.81
0.123
0.150
1.27
2.03
0.050
0.080
1.02
2.03
0.040
0.080
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5484
Document Number: 71262
06-Jul-01
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Package Information
Vishay Siliconix
SOIC (WIDEĆBODY): 20ĆLEAD
ECN: S-03946—Rev. C, 09-Jul-01
DWG: 5848
Ğ0.06$0.002D
CAVITY NO.
0.2525$0.001
0.334$0.005
R0.004
20 19
18 17 16 15 14 13
12
0.010
11
R0.008
0.1475$0.001
R0.009
0.295$0.001
0.070$0.005
R0.004
1
2 3
4
5
6
7
8
9
4°$2°
10
0.032$0.005
DETAIL A
0.055$0.005
PIN 1 INDICATOR
Ğ0.0470.007$0.001 dp
SURFACE POLISHED
0.334$0.005
0.291$0.001
0.02045°
7°(4)
0.091$0.001
0.504$0.001
0.098$0.002
R0.004
0.295$0.001
0.406$0.004
0.041$0.001
0.050 TYP.
0.017$0.0003
0.006$0.002
DETAIL A
0.504$0.001
All Dimensions In Inches.
Document Number: 71267
06-Jul-01
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Revision: 02-Oct-12
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Document Number: 91000
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