Vishay DG411L Precision monolithic quad spst low-voltage cmos analog switch Datasheet

DG411L/412L/413L
Vishay Siliconix
Precision Monolithic Quad SPST
Low-Voltage CMOS Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D 2.7- thru 12-V Single Supply or
"3- thru "6-Dual Supply
D On-Resistance—r DS(on): 17 D Fast Switching—tON: 19 ns
—tOFF: 12 ns
D TTL, CMOS Compatible
D Low Leakage: 0.25 nA
D 2000-V ESD Protection
D
D
D
D
D
D
D
D
D
D
D
Widest Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make Switching Action
Simple Interfacing
Precision Automatic Test Equipment
Precision Data Acquisition
Communication Systems
Battery Powered Systems
Computer Peripherals
SDSL, DSLAM
Audio and Video Signal Routing
DESCRIPTION
The DG411L/412L/413L are low voltage pin-for-pin
compatible companion devices to the industry standard
DG411/412/413 with improved performance
Using BiCMOS wafer fabrication technology allows the
DG411L/412L/413L to operate on single and dual supplies.
Single supply voltage ranges from 3 to 12 V while dual supply
operation is recommended with "3 to "6 V.
Combining high speed (tON: 19 ns), flat rDS(on) over the analog
signal range (5 ), minimal insertion lose (-3 dB at 280 MHz),
and excellent crosstalk and off-isolation performance (-50 dB
at 50 MHz), the DG411L/412L/413L are ideally suited for audio
and video signal switching.
The DG411L and DG412L respond to opposite control logic as
shown in the Truth Table. The DG413L has two normally open
and two normally closed switches.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411L/412L
TSSOP and SOIC
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
Logic
DG411L
DG412L
V-
4
13
V+
0
ON
OFF
GND
5
12
VL
1
OFF
ON
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
TRUTH TABLE
Logic “0” v 0.8 V
Logic “1” w 2.4 V
Top View
Document Number: 71397
S-21452—Rev. C, 26-Aug-02
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1
DG411L/412L/413L
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG413L
Dual-In-Line and SOIC
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
GND
5
12
VL
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
TRUTH TABLE
Logic
SW1, SW4
SW2, SW3
0
OFF
ON
1
ON
OFF
Logic “0” v 0.8 V
Logic “1” w 2.4 V
Top View
ORDERING INFORMATION
Temp Range
Package
Part Number
DG411L/412L
DG411LDY
16-Pin Narrow SOIC
-40 to 85_C
_
DG412LDY
DG411LDQ
16-Pin TSSOP
DG412LDQ
DG413L
-40 to 85_C
_
16-Pin Narrow SOIC
DG413LDY
16-Pin TSSOP
DG413LDQ
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 TO 13 V
GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) +0.3 V
I a,
N
VS, VD . . . . . . . . . . -0.3 to (V+ +0.3 V) or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA
Storage Temperature
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2
(DQ, DY Suffix) . . . . . . . . . . . . . . -65 to 125_C
Power Dissipation (Package)b
16-Pin TSSOPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
16-Pin SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 7 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
Document Number: 71397
S-21452—Rev. C, 26-Aug-02
DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 12 V)
Limits
Test Conditions Unless Specified
Parameter
Symbol
-40 to 85_C
V+ = 12 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Full
0
V+ = 10.8 V, V- = 0 V
IS = 10 mA, VD = 2/9 V
Room
Full
Typc
Maxd
Unit
12
V
30
40
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Switch Off
Leakage Current
Channel On
Leakage Current
VANALOG
rDS(on)
IS(off)
VD = 1/11 V, VS = 11/1 V
ID(off)
20
Room
Full
-1
-10
1
10
Room
Full
-1
-10
1
10
1
10
ID(on)
VS = VD = 11/1 V
Room
Full
-1
-10
Input Current, VIN Low
IIL
VIN Under Test = 0.8 V
Full
-1
Input Current, VIN High
IIH
VIN Under Test = 2.4 V
Full
-1
nA
Digital Control
0.01
1
A
1
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time Delay
Charge
Injectione
20
50
60
Room
Full
12
30
40
6
DG413L Only, VS = 5 V
RL = 300 , CL = 35 pF
Room
Q
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
5
RL = 50 , CL = 5 pF,
f = 1 MHz
Room
71
Room
95
Room
5
OIRR
Channel-to-Channel Crosstalke
XTALK
Source Off
Room
Full
tD
Off Isolatione
Capacitancee
RL = 300 , CL = 35 pF
VS = 5 V See Figure 2
CS(off)
Drain Off Capacitancee
CD(off)
Channel On Capacitancee
Room
6
CD(on)
Room
15
Positive Supply Current
I+
Room
Full
0.02
Negative Supply Current
I-
f = 1 MHz
ns
pC
dB
pF
Power Supplies
Room
Full
VIN = 0 or 5 V
Logic Supply Current
Ground Current
IL
Room
Full
IGND
Room
Full
-1
-5
-0.002
0.002
-1
-5
1
5
A
1
5
-0.002
SPECIFICATIONSa (DUAL SUPPLY "5 V)
Limits
Test Conditions Unless Specified
Parameter
Symbol
-40 to 85_C
V+ = 5 V, V- = -5 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Full
-5
V+ = 5 V, V- = -5 V
IS = 10 mA, VD = "3.5 V
Room
Full
Typc
Maxd
Unit
5
V
20
33
40
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Switch Off
Leakage Currentg
Channel On
Leakage Currentg
Document Number: 71397
S-21452—Rev. C, 26-Aug-02
VANALOG
rDS(on)
IS(off)
ID(off)
ID(on)
V+ = 5.5 V, V- = -5.5 V
VD = "4.5 V, VS = #4.5 V
V+ = 5.5 V, V- = -5.5 V
VS = VD = "4.5 V
Room
Full
-1
-10
1
10
Room
Full
-1
-10
1
10
Room
Full
-1
-10
1
10
nA
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DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (DUAL SUPPLY "5 V)
Limits
Test Conditions Unless Specified
-40 to 85_C
Symbol
V+ = 5 V, V- = -5 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Input Current, VIN Lowe
IIL
VIN Under Test = 0.8 V
Full
-1
0.05
1
Highe
IIH
VIN Under Test = 2.4 V
Full
-1
0.05
1
Room
Full
21
50
60
Room
Full
16
35
40
6
Parameter
Unit
Digital Control
Input Current, VIN
A
Dynamic Characteristics
Turn-On Timee
tON
Turn-Off Timee
tOFF
Break-Before-Make Time Delaye
Charge
RL = 300 , CL = 35 pF
VS = "3.5 V See Figure 2
tD
DG413L Only, VS = 3.5 V
RL = 300 , CL = 35 pF
Room
Q
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
5
RL = 50 , CL = 5 pF,
f = 1 MHz
Room
68
Room
85
Injectione
Off Isolatione
OIRR
Channel-to-Channel Crosstalke
XTALK
pC
dB
Source Off Capacitancee
CS(off)
Room
9
Drain Off Capacitancee
CD(off)
Room
9
CD(on)
Room
20
Positive Supply Currente
I+
Room
Full
0.03
Negative Supply Currente
I-
Room
Full
Logic Supply Currente
IL
Room
Full
IGND
Room
Full
Channel On
Capacitancee
f = 1 MHz
ns
pF
Power Supplies
VIN = 0 or 5 V
Ground Currente
-1
-5
-0.002
0.002
-1
-5
1
5
A
1
5
-0.002
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Limits
Test Conditions Unless Specified
Parameter
Symbol
-40 to 85_C
V+ = 5 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
V+ = 4.5 V, IS = 5 mA
VD = 1 V, 3.5 V
Mind
Typc
Maxd
Unit
5
V
Room
Full
35
50
75
Room
Hot
27
50
60
Room
Hot
15
30
40
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistancee
VANALOG
rDS(on)
Full
Dynamic Characteristics
Turn-On Timee
tON
Turn-Off Timee
tOFF
RL = 300 , CL = 35 pF
VS = 3.5 V, See Figure 2
Break-Before-Make
Time Delaye
tD
DG413L Only, VS = 3.5 V,
RL = 300 , CL = 35 pF
Room
6
Charge Injectione
Q
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
0.5
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4
ns
pC
Document Number: 71397
S-21452—Rev. C, 26-Aug-02
DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Limits
Test Conditions Unless Specified
Parameter
Symbol
V+ = 5 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
-40 to 85_C
Tempb
Mind
Typc
Maxd
0.02
1
5
Unit
Power Supplies
Positive Supply Currente
I+
Room
Hot
Negative Supply Currente
I-
Room
Hot
Logic Supply Currente
IL
Room
Hot
IGND
Room
Hot
VIN = 0 or 5 V
Ground Currente
-1
-5
-0.002
0.002
-1
-5
1
5
A
-0.002
SPECIFICATIONSa (SINGLE SUPPLY 3 V)
Limits
Test Conditions Unless Specified
Parameter
Symbol
-40 to 85_C
V+ = 3 V, V- = 0 V
VL = 3 V, VIN = 0.4 Vf
Tempb
Mind
Full
0
V+ = 2.7 V, V- = 0 V
IS = 5 mA, VD = 0.5, 2.2 V
Room
Full
Typc
Maxd
Unit
3
V
65
80
100
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Switch Off
Leakage Currentg
Channel On
Leakage Currentg
VANALOG
rDS(on)
IS(off)
ID(off)
V+ = 3.3 V, V- = 0 V
VD = 1, 2 V, VS = 2, 1 V
Room
Full
-1
-10
1
10
Room
Full
-1
-10
1
10
1
10
nA
ID(on)
V+ = 3.3 V, V- = 0 V
VS = VD = 1, 2 V
Room
Full
-1
-10
Input Current, VIN Low
IIL
VIN Under Test = 0.4 V
Full
-1
0.005
1
Input Current, VIN High
IIH
VIN Under Test = 2.4 V
Full
-1
0.005
1
Room
Full
50
85
110
Room
Full
30
60
85
6
Digital Control
A
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make
Time Delay
Charge
Injectione
RL = 300 , CL = 35 pF
VS = 1.5 V See Figure 2
tD
DG413L Only, VS = 1.5 V
RL = 300 , CL = 35 pF
Room
Q
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
1
RL = 50 , CL = 5 pF,
f = 1 MHz
Room
68
Room
85
Room
6
Off Isolatione
OIRR
Channel-to-Channel Crosstalke
XTALK
Source Off Capacitancee
CS(off)
Drain Off Capacitancee
CD(off)
Channel On Capacitancee
CD(on)
f = 1 MHz
Room
6
Room
20
ns
pC
dB
pF
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Document Number: 71397
S-21452—Rev. C, 26-Aug-02
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DG411L/412L/413L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. Drain Voltage
(Single Supply)
rDS(on) vs. Drain Voltage and Temperature
(Single Supply)
100
50
r DS(on) - On-Resistance ( )
r DS(on) - On-Resistance ( )
V+ = 5 V
V- = 0 V
80
VCC = 2.7 V
60
40
VCC = 4.5 V
VCC = 12 V
20
0
40
A
B
30
C
D
20
A-125 _C
B-85 _C
C-40 _C
D-25 _C
10
0
0
3
6
9
12
0
1
2
rDS(on) vs. Drain Voltage and Temperature
(Dual Supply)
Supply Current vs. Temperature
V" = "5 V
V+ = 5 V
V- = 0 V
0.25
28
Supply Current (nA)
r DS(on) - On-Resistance ( )
5
0.30
35
A
21
B
C
14
D
A-125 _C
B-85 _C
C-40 _C
D-25 _C
7
-5
-3
0.20
0.15
0.10
0.05
0
-1
1
3
0.00
-50
5
-25
0
Drain Voltage (V)
25
50
75
100
125
150
Temperature (_C)
Leakage Current vs. Analog Voltage
(Dual Supply)
Switching Time vs. Single Supply
30
50
V+ = 5 V
V- = -5 V
20
40
Switching Speed (nS)
I S , I D Leakage Current (pA)
4
Drain Voltage (V)
Drain Voltage (V)
10
ID(on)
0
ID(off)
IS(off)
-10
tON
30
20
tOFF
10
-20
-30
0
-5
-3
-1
1
3
VD or VS - Drain-Source Voltage
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6
3
5
0
3
6
9
12
15
V+ - Positive Supply Voltage (V)
Document Number: 71397
S-21452—Rev. C, 26-Aug-02
DG411L/412L/413L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Dual Supply
Charge Injection vs. Drain Voltage
6
45
4
tON
tOFF
27
Charge Injection (Q)
Switching Speed (nS)
36
18
VSUPPLY = "5 V
2
VSUPPLY = 3 V
0
9
0
2.5
-2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-5
-3
-1
V" Positive Supply Voltage (V)
5
Drain Capacitance vs. Drain Voltage
(Single Supply)
7
1.8
6
Capacitance (pF)
1.5
V TH - Threshold (V)
3
Drain Voltage (V)
Input Threshold vs. Single Supply Voltage
1.2
0.9
0.6
CD(off) @ VCC = 5 V
CD(off) @ VCC = 12 V
5
CD(off) @ VCC = 3 V
4
3
2
0.3
1
0.0
0
0
2
4
6
8
10
12
14
0
3
V" Positive Supply Voltage (V)
6
9
12
VD - Drain Voltage (V)
Capacitance vs. Analog Signal
(Dual Supply)
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency (Single Supply)
25
10
VSUPPLY = "5 V
CD(on)
-10
20
-30
Loss (dB)
Capacitance (pF)
1
15
-50
V+ = 3 V
V- = 0 V
RL = 50 Insertion Loss
-3 dB = 280 MHz
Off Isolation
10
-70
Crosstalk
CS/CD(off)
5
-90
0
-1 10
-5
-3
-1
1
Analog Voltage (V)
Document Number: 71397
S-21452—Rev. C, 26-Aug-02
3
5
0.1
1
10
100
1000
Frequency (MHz)
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DG411L/412L/413L
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
VL
VLevel
Shift/
Drive
VIN
V+
GND
D
V-
FIGURE 1.
TEST CIRCUITS
VL
V+
Logic
Input
tr <20 ns
tf <20 ns
3V
50%
0V
VL
VS
V+
S
tON
D
Switch
Input*
VO
VS
VO
IN
RL
300 V-
GND
CL
35 pF
Switch
Output
Switch
Input*
V-
90%
0V
tON
90%
VO
-V S
CL (includes fixture and stray capacitance)
RL
VO = VS
Note:
RL + rDS(on)
Logic input waveform is inverted for switches that
have the opposite logic sense control
FIGURE 2. Switching Time
VL
V+
Logic
Input
VS1
S1
D1
VS2
Switch
Output
IN2
GND
RL1
300 V-
90%
VO2
D2
S2
50%
0V
VS1
VO1
VO1
IN1
3V
RL2
300 CL2
35 pF
CL1
35 pF
Switch
Output
0V
VS2
VO2
0V
90%
tD
tD
VCL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make (DG413L)
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Document Number: 71397
S-21452—Rev. C, 26-Aug-02
DG411L/412L/413L
Vishay Siliconix
TEST CIRCUITS
VL
VO
V+
VO
V+
VL
Rg
S
INX
D
IN
Vg
OFF
VO
ON
OFF
CL
10 nF
3V
V-
GND
INX
V-
OFF
ON
Q = VO x CL
OFF
INX dependent on switch configuration Input polarity determined
by sense of switch.
FIGURE 4. Charge Injection
VL
V+
C
C
VL
S1
VS
Rg = 50 V+
D1
50 IN1
0V, 2.4 V
S2
D2
VO
NC
RL
IN2
0V, 2.4 V
GND
V-
C
VS
XTALK Isolation = 20 log
VO
V-
C = RF bypass
FIGURE 5. Crosstalk
VL
V+
C
C
VL
V+
S
VS
V+
C
VO
D
C
VL
Rg = 50 0V, 2.4 V
VL
V+
S
RL
50 IN
Meter
GND
V-
IN
C
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
D
VGND
Off Isolation = 20 log
V-
VS
C
VO
C = RF Bypass
FIGURE 6. Off Isolation
Document Number: 71397
S-21452—Rev. C, 26-Aug-02
V-
FIGURE 7. Source/Drain Capacitances
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