Vishay DG413DY-T1-E3 Precision monolithic quad spst cmos analog switch Datasheet

DG411/412/413
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
FEATURES
The DG411 series of monolithic quad analog switches was
designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35 µW)
with high speed (tON: 110 ns), the DG411 family is ideally
suited for portable and battery powered industrial and
military applications.
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To achieve high-voltage ratings and superior switching
performance, the DG411 series was built on Vishay
Siliconix’s high voltage silicon gate process. An epitaxial
layer prevents latchup.
44 V Supply Max Rating
± 15 V Analog Signal Range
On-Resistance - rDS(on): 25 Ω
Fast Switching - tON: 110 ns
Ultra Low Power - PD: 0.35 µW
TTL, CMOS Compatible
Single Supply Capability
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
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Each switch conducts equally well in both directions when
on, and blocks input voltages up to the supply levels when
off.
Widest Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make Switching Action
Simple Interfacing
APPLICATIONS
The DG411 and DG412 respond to opposite control logic as
shown in the Truth Table. The DG413 has two normally open
and two normally closed switches.
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Precision Automatic Test Equipment
Precision Data Acquisition
Communication Systems
Battery Powered Systems
Computer Peripherals
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411
Dual-In-Line and SOIC
DG411
LCC
D1 IN1 NC IN2 D2
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
GND
5
12
VL
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
Key
3
2
1
4
18
S2
V-
5
17
V+
NC
6
16
NC
7
15
VL
8
14
S3
GND
S4
9
10
11
12
TRUTH TABLE
Logic
0
1
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
DG411
ON
OFF
DG412
OFF
ON
Logic
SW1, SW4
SW2, SW3
0
OFF
ON
1
ON
OFF
13
D4 IN4 NC IN3 D3
Top View
DG413
Dual-In-Line and SOIC
DG413
LCC
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
13
4
19
S1
Top View
V-
20
V+
GND
5
12
VL
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
Top View
D1
Key
3
IN1 NC IN2
2
1
20
D2
19
S1
4
18
S2
V-
5
17
V+
NC
6
16
GND
7
15
VL
S4
8
14
S3
9
D4
10
11
12
IN4 NC IN3
Top View
NC
TRUTH TABLE
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
13
D3
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
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1
DG411/412/413
Vishay Siliconix
ORDERING INFORMATION
Temp Range
DG411/DG412
Package
- 40 to 85 °C
16-Pin Plastic DIP
Part Number
DG411DJ
DG411DJ-E3
DG412DJ
DG412DJ-E3
DG411DY
DG411DY-E3
DG411DY-T1
DG411DY-T1-E3
- 40 to 85 °C
16-Pin Narrow SOIC
DG412DY
DG412DY-E3
DG412DY-T1
DG412DY-T1-E3
DG413
16-Pin Plastic DIP
DG413DJ
DG413DJ-E3
16-Pin Narrow SOIC
DG413DY
DG413DY-E3
DG413DY-T1
DG413DY-T1-E3
- 40 to 85 °C
ABSOLUTE MAXIMUM RATINGS
Parameter
V+ to V-
Limit
44
GND to VVL
25
(GND - 0.3) to (V+) + 0.3
(V-) -2 to (V+) + 2
or 30 mA, whichever occurs first
30
Digital Inputsa, VS, VD
Continuous Current (Any Terminal)
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
Power Dissipation (Package)b
Unit
100
(AK, AZ Suffix)
- 65 to 150
(DJ, DY Suffix)
- 65 to 125
16-Pin Plastic DIPc
470
16-Pin Narrow SOICd
600
16-Pin CerDIPe
900
LCC-20e
900
V
mA
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/°C above 25 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
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Document Number: 70050
S-71241–Rev. E, 25-Jun-07
DG411/412/413
Vishay Siliconix
SPECIFICATIONSa
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
Parameter
Analog Switch
Symbol
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
rDS(on)
IS(off)
Switch Off Leakage Current
ID(off)
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
- 15
15
- 15
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
V+ = 13.5 V, V- = - 13.5 V
IS = - 10 mA, VD = ± 8.5 V
Room
Full
25
Room
Full
± 0.1
- 0.25
- 20
0.25
20
- 0.25
-5
0.25
5
Room
Full
± 0.1
- 0.25
- 20
0.25
20
- 0.25
-5
0.25
5
Typc
Full
V+ = 16.5, V- = - 16.5 V
VD = ± 15.5 V, VS = ± 15.5 V
35
45
Maxd
Unit
15
V
35
45
Ω
ID(on)
V+ = 16.5 V, V- = - 16.5 V
VS = VD = ± 15.5 V
Room
Full
± 0.1
- 0.4
- 40
0.4
40
- 0.4
- 10
0.4
10
Digital Control
Input Current, VIN Low
IIL
VIN under test = 0.8 V
Full
0.005
- 0.5
0.5
- 0.5
0.5
Input Current, VIN High
IIH
VIN under test = 2.4 V
Full
0.005
- 0.5
0.5
- 0.5
0.5
Turn-On Time
tON
RL = 300 Ω, CL = 35 pF
110
Turn-Off Time
tOFF
Room
Full
Room
Full
Channel On Leakage Current
nA
µA
Dynamic Characteristics
VS = ± 10 V, See Figure 2
Break-Before-Make
Time Delay
tD
DG413 Only, VS = 10 V
RL = 300 Ω, CL = 35 pF
Charge Injection
Q
Vg = 0 V, Rg = 0 Ω
CL = 10 nF
Off Isolatione
Channel-to-Channel
Crosstalke
Source Off Capacitancee
Drain Off
Capacitancee
Channel On Capacitancee
Power Supplies
OIRR
XTALK
CS(off)
CD(off)
I+
Negative Supply Current
I-
Logic Supply Current
IL
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
f = 1 MHz
CD(on)
Positive Supply Current
Ground Current
RL = 50 Ω, CL = 5 pF,
f = 1 MHz
IGND
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
175
240
145
160
100
Room
25
Room
5
Room
68
Room
85
Room
9
Room
9
Room
35
Room
Full
Room
Full
Room
Full
Room
Full
0.0001
- 0.0001
ns
pC
dB
pF
1
5
-1
-5
0.0001
- 0.0001
175
220
145
160
1
5
-1
-5
1
5
-1
-5
1
5
µA
-1
-5
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DG411/412/413
Vishay Siliconix
SPECIFICATIONS FOR UNIPOLAR SUPPLIESa
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Mind
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
rDS(on)
V+ = 10.8 V,
IS = - 10 mA, VD = 3 V, 8 V
Room
Full
40
Turn-On Time
tON
RL = 300 Ω, CL = 35 pF
175
Turn-Off Time
tOFF
Room
Hot
Room
Hot
250
400
125
140
250
315
125
140
Room
25
Parameter
Analog Switch
Symbol
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
Typc
Maxd
Full
Maxd
Unit
12
12
V
80
100
80
100
Ω
Dynamic Characteristics
VS = 8 V, See Figure 2
95
Break-Before-Make
Time Delay
tD
DG413 Only, VS = 8 V
RL = 300 Ω, CL = 35 pF
Charge Injection
Q
Vg = 6 V, Rg = 0 Ω, CL = 10 nF
Room
25
0.0001
V+ = 13.5 V, VIN = 0 or 5 V
Room
Hot
Room
Hot
Room
Hot
Room
Hot
ns
pC
Power Supplies
Positive Supply Current
I+
Negative Supply Current
IIL
Logic Supply Current
IGND
Ground Current
- 0.0001
1
5
-1
-5
-1
-5
0.0001
- 0.0001
1
5
1
5
µA
1
5
-1
-5
-5
Notes:
a.Refer to PROCESS OPTION FLOWCHART.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
300
50
TA = 25 °C
VL = 5 V
250
40
35
± 10 V
25
V+ = 3 V
VL = 3 V
200
±8V
30
V DS(on) (Ω)
r DS(on) Drain-Source On-Resistance (Ω)
45
±5V
± 12 V
± 15 V
20
150
V+ = 5 V
100
15
± 20 V
8V
10
12 V
50
15 V
5
20 V
0
0
- 20
- 15
- 10
-5
0
5
10
15
20
VD – Drain Voltage (V)
On-Resistance vs. VD and Power Supply Voltage
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4
0
2
4
6
8
10
12
14
16
18
20
VD – Drain Voltage (V)
On-Resistance vs. VD and Unipolar Supply Voltage
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
DG411/412/413
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
V+ = 15 V
V- = - 15 V
VL = 5 V
TA = 25 °C
20
I S, I D (pA)
10
r DS(on) – Drain-Source On-Resistance (Ω)
35
ID(off)
0
IS(off)
- 10
ID(on)
- 20
- 30
- 40
- 50
V+ = 15 V
V- = - 15 V
VL = 5 V
30
125 °C
25
85 °C
20
25 °C
15
- 55 °C
10
5
- 60
- 15
- 10
-5
0
5
10
- 15
15
- 10
5
10
15
140
100
V+ = 15 V
V- = - 15 V
VL = 5 V
80
V+ = 15 V
V- = - 15 V
VL = 5 V
120
100
60
CL = 10 nF
80
40
60
Q (pC)
Q (pC)
0
ID, IS Leakages vs. Temperature
Leakage Current vs. Analog Voltage
CL = 10 nF
20
CL = 1 nF
40
20
0
0
CL = 1 nF
- 20
- 20
- 40
- 40
- 60
- 60
- 15
- 10
-5
0
5
10
- 15
15
- 10
-5
0
5
10
VS – Source Voltage (V)
VD – Drain Voltage (V)
Charge Injection vs. Analog Voltage
Charge Injection vs. Analog Voltage
15
240
3.5
210
3.0
VL = 7.5 V
2.0
6.5 V
1.5
1.0
5.5 V
4.5 V
t ON, t OFF (ns)
180
2.5
V TH (V)
-5
VD – Drain Voltage (V)
VD or VS – Drain or Source Voltage (V)
V+ = 15 V
V- = - 15 V
VL = 5 V
VS = 10 V
150
tON
120
tOFF
90
60
30
0.5
0
0
(V+) 5
10
15
20
25
30
35
40
- 55 - 35
- 15
5
25
45
65
85
105 125
Temperature (°C)
Input Switching Threshold vs. Supply Voltage
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
Switching Time vs. Temperature
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DG411/412/413
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 mA
V+ = 15 V
V- = - 15 V
VL = 5 V
10 mA
= 1 SW
= 4 SW
1 mA
I SUPPLY
I+, I100 µA
10 µA
IL
1 µA
100 nA
10 nA
10
100
1k
10 k
100 k
1M
10 M
f – Frequency (Hz)
Supply Current vs. Input Switching Frequency
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
VL
VLevel
Shift/
Drive
VIN
V+
GND
D
V-
Figure 1.
TEST CIRCUITS
+5V
+ 15 V
Logic
Input
tr < 20 ns
tf < 20 ns
3V
50 %
0V
VL
± 10 V
V+
S
tON
D
Switch
Input*
VO
VS
VO
IN
GND
RL
300 Ω
V-
CL
35 pF
Switch
Output
Switch
Input*
- 15 V
VO = V S
0V
tON
90 %
VO
-V S
*VS = 10 V for t ON, V S = - 10 V for tOFF
CL (includes fixture and stray capacitance)
RL
90 %
Note:
RL + rDS(on)
Logic input waveform is inverted for switches that
have the opposite logic sense control
Figure 2. Switching Time
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Document Number: 70050
S-71241–Rev. E, 25-Jun-07
DG411/412/413
Vishay Siliconix
TEST CIRCUITS
+5V
+ 15 V
3V
Logic
Input
VL
VS1
S1
D1
Switch
Output
IN2
RL1
300 Ω
V-
GND
90 %
VO2
D2
S2
0V
VS1
VO1
VO1
IN1
VS2
50 %
V+
RL2
300 Ω
0V
VS2
VO2
CL1
35 pF
CL2
35 pF
0V
Switch
Output
90 %
tD
tD
- 15 V
CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make (DG413)
ΔVO
Rg
+5V
+ 15 V
VL
V+
S
VO
INX
OFF
D
IN
Vg
ON
OFF
VO
CL
10 nF
3V
V-
GND
INX
OFF
ON
Q = ΔV O x CL
OFF
INX dependent on switch configuration Input polarity determined
by sense of switch.
- 15 V
Figure 4. Charge Injection
C
+5V
+ 15 V
VL
V+
D1
S1
VS
Rg = 50 Ω
C
50 Ω
IN1
0 V, 2.4 V
S2
D2
VO
NC
0 V, 2.4 V
RL
IN2
GND
XTA LK Isolation = 20 log
V-
C
VS
VO
- 15 V
C = RF bypass
Figure 5. Crosstalk
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
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DG411/412/413
Vishay Siliconix
+5V
+ 15 V
C
VL
+ 15 V
C
V+
C
VO
D
S
VS
+5V
C
VL
V+
S
Rg = 50 Ω
RL
50 Ω
IN
0 V, 2.4 V
Meter
IN
GND
V-
C
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
D
GND
- 15 V
Off Isolation = 20 log
V-
C
VS
VO
- 15 V
C = RF Bypass
Figure 7. Source/Drain Capacitances
Figure 6. Off Isolation
APPLICATIONS
Single Supply Operation:
Summing Amplifier
The DG411/412/413 can be operated with unipolar supplies
from 5 V to 44 V. These devices are characterized and tested
for unipolar supply operation at 12 V to facilitate the majority
of applications. In single supply operation, V+ is tied to VL
and V- is tied to 0 V. See Input Switching Threshold vs.
Supply Voltage curve for VL versus input threshold
requirments.
When driving a high impedance, high capacitance load such
as shown in Figure 8, where the inputs to the summing
amplifier have some noise filtering, it is necessary to have
shunt switches for rapid discharge of the filter capacitor, thus
preventing offsets from occurring at the output.
R1
R2
VIN 1
C1
R5
R3
R4
VIN 2
–
VOUT
+
C2
R6
DG413
Figure 8. Summing Amplifier
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70050.
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Document Number: 70050
S-71241–Rev. E, 25-Jun-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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