Vishay DG419LDQ-T1-E3 Precision monolithic low-voltage cmos analog switch Datasheet

DG417L/418L/419L
Vishay Siliconix
Precision Monolithic Low-Voltage CMOS Analog Switches
DESCRIPTION
FEATURES
The DG417L/418L/419L are low voltage pin-for-pin
compatible companion devices to the industry standard
DG417/418/419 with improved performance.
• 2.7- thru 12 V Single Supply or
± 3- thru ± 6 Dual Supply
• On-Resistance - rON: 14 Ω
• Fast Switching - tON: 28 ns
- tOFF: 13 ns
• TTL, CMOS Compatible
• Low Leakage: < 100 pA
Using BiCMOS wafer fabrication technology allows the
DG417L/418L/419L to operate on single and dual supplies.
Single supply voltage ranges from 3 to 12 V while dual
supply operation is recommended with ± 3 to ± 6 V.
Combining high speed (tON: 28 ns), flat rON over the analog
signal range (6 Ω), minimal insertion lose (up to 100 MHz),
and excellent crosstalk and off-isolation performance (- 70 dB
at 1 MHz), the DG417L/418L/419L are ideally suited for audio
and video signal switching.
The DG417L and DG418L respond to opposite control logic
as shown in the Truth Table. The DG419L has an SPDT
configuration.
BENEFITS
•
•
•
•
Pb-free
Available
RoHS*
COMPLIANT
APPLICATIONS
•
•
•
•
•
•
•
Precision Automatic Test Equipment
Precision Data Acquisition
Communication Systems
Battery Powered Systems
Computer Peripherals
SDSL, DSLAM
Audio and Video Signal Routing
Widest Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make Switching Action
Simple Interfacing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417L/DG418L
DG419L
Dual-In-Line, MSOP-8 and SOIC-8
Dual-In-Line, MSOP-8 and SOIC-8
NC/NO
1
8
COM
COM
1
8
NO
*
2
7
V-
NC
2
7
V-
GND
3
6
IN
GND
3
6
IN
V+
4
5
VL
V+
4
5
VL
Top View
Top View
*Not Connected
TRUTH TABLE - DG419L
TRUTH TABLE
Logic
0
1
DG417L
ON
OFF
DG418L
OFF
ON
ORDERING INFORMATION DG417L/418L
Temp Range
Package
8-Pin Narrow SOIC
8-Pin MSOP
Part Number
DG417LDY
DG417LDY-E3
DG417LDY-T1
DG417LDY-T1-E3
DG418LDY
DG418LDY-E3
DG418LDY-T1
DG418LDY-T1-E3
Logic
0
1
NC
ON
OFF
NO
OFF
ON
ORDERING INFORMATION DG419L
Temp Range
- 40 to 85 °C
Package
8-Pin Narrow SOIC
8-Pin MSOP
Part Number
DG419LDY
DG419LDY-E3
DG419LDY-T1
DG419LDY-T1-E3
DG419LDQ-T1-E3
DG417LDQ-T1-E3
DG418LDQ-T1-E3
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71763
S-71009–Rev. E, 14-May-07
www.vishay.com
1
DG417L/418L/419L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
V+ to VGND to VVL
- 0.3 to 13
7
(GND - 0.3) to (V+) + 0.3
- 0.3 to (V+ + 0.3)
or 30 mA, whichever occurs first
V
a
IN, COM, NC, NO
Continuous Current (Any Terminal)
Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)
Storage Temperature
(AK, DQ, DY Suffix)
30
100
- 65 to 150
320
400
600
8-Pin MSOPc
8-Pin SOICc
8-Pin CerDIPd
Power Dissipation (Packages)b
mA
°C
mW
Notes:
a. Signals on NC, NO, COM, or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 25 °C.
d. Derate 12 mW/°C above 75 °C.
SPECIFICATIONS (SINGLE SUPPLY 12 V)
Parameter
Symbol
A Suffix Limits D Suffix Limits
- 55 to 125 °C
- 40 to 85 °C
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
V+ = 10.8 V, V- = 0 V
INO, INC = 5 mA, VCOM = 2/9 V
Room
Full
Typc
Mind
Maxd
Mind
12
0
Maxd
Unit
12
V
20
23.5
Ω
Analog Switch
Analog Signal Rangee
On-Resistance
Switch Off Leakage Current
VANALOG
rON
INO(off)
INC(off)
ICOM(off)
Channel On Leakage Current
ICOM(on)
Full
VCOM = 1/11 V
VNO, VNC = 11/1 V
VNO, VNC = VCOM = 11/1 V
0
13
20
32
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
- 1.5
1.5
-1
1
µA
43
46
31
32
ns
nA
Digital Control
Input Current
IINL or IINH
Full
0.01
RL = 300 Ω, CL = 35 pF
VNO, VNC = 5 V, See Figure 2
Room
Full
Room
Full
28
tD
DG419L Only, VNC, VNO = 5 V
RL = 300 Ω, CL = 35 pF
Room
Charge Injectione
QINJ
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
1
Off-Isolatione
OIRR
- 71
Channel-to-Channel Crosstalke
XTALK
RL = 50 Ω, CL = 5 pF , f = 1 MHz
Room
Room
- 71
Room
5
CON
Room
15
Positive Supply Current
I+
0.02
Negative Supply Current
I-
Room
Full
Room
Full
Room
Full
Room
Full
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time Delay
Source Off Capacitancee
Channel-On Capacitancee
Power Supplies
CNO(off)
CNC(off)
VIN = 0 or V+, f = 1 MHz
VIN = 0 or VL
Logic Supply Current
Ground Current
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2
IL
IGND
43
50
31
35
13
13
- 0.002
pC
dB
pF
1
7.5
-1
- 7.5
0.002
- 0.002
1
5
-1
-5
1
7.5
-1
- 7.5
1
5
µA
-1
-5
Document Number: 71763
S-71009–Rev. E, 14-May-07
DG417L/418L/419L
Vishay Siliconix
SPECIFICATIONS (DUAL SUPPLY ± 5 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = - 5 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
A Suffix Limits
- 55 to 125 °C
Tempb
Typc
D Suffix Limits
- 40 to 85 °C
Mind
Maxd
Mind
Maxd
Unit
-5
5
-5
5
V
18.5
21
Ω
Analog Switch
Analog Signal Rangee
On-Resistance
Switch Off
Leakage Currenta
Channel On
Leakage Currenta
VANALOG
rON
INO(off)
INC(off)
ICOM(off)
ICOM(on)
Full
V+ = 5 V, V- = - 5 V
INO, INC = 5 mA, VCOM = ± 3.5 V
Room
Full
V+ = 5.5 , V- = - 5.5 V
VCOM = ± 4.5 V
VNO, VNC = ± 4.5 V
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
- 1.5
1.5
-1
1
V+ = 5.5 V, V- = - 5.5 V
VNO, VNC = VCOM = ± 4.5 V
14
18.5
30
nA
Digital Control
Input Currenta
IINL or IINH
Full
0.05
Room
Full
30
41
50
41
44
Room
Full
16
32
36
32
33
tD
DG419L Only, VNO, VNC = 3.5 V
RL = 300 Ω, CL = 35 pF
Room
10
tTRANS
RL = 300 Ω, CL = 35 pF
VS1 = ± 3.5 V, VS2 = ± 3.5 V
Room
33
47
47
Charge Injectione
QINJ
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
3
Off-Isolatione
OIRR
Room
- 71
Channel-to-Channel
Crosstalke
XTALK
Room
- 76
Room
5.2
CON
Room
15
Positive Supply Currente
I+
Room
Full
0.03
Negative Supply Currente
I-
Room
Full
- 0.002
Room
Full
Room
Full
0.002
µA
Dynamic Characteristics
Turn-On Timee
tON
Turn-Off Timee
tOFF
Break-Before-Make Time
Delaye
TransitionTime
Source Off Capacitancee
Channel-On Capacitancee
CNO(off)
CNC(off)
RL = 300 Ω, CL = 35 pF
VNO, VNC = ± 3.5 V, See Figure 2
RL = 50 Ω, CL = 5 pF , f = 1 MHz
f = 1 MHz
ns
pC
dB
pF
Power Supplies
VIN = 0 or VL
Logic Supply Currente
Ground Currente
Document Number: 71763
S-71009–Rev. E, 14-May-07
IL
IGND
- 0.002
1
7.5
-1
- 7.5
1
5
-1
-5
1
7.5
-1
- 7.5
1
5
µA
-1
-5
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DG417L/418L/419L
Vishay Siliconix
SPECIFICATIONS (SINGLE SUPPLY 5 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
A Suffix Limits
- 55 to 125 °C
Tempb
Typc
Mind
Maxd
D Suffix Limits
- 40 to 85 °C
Mind
Maxd
Unit
5
5
V
Ω
Analog Switch
Analog Signal Rangee
On-Resistancee
VANALOG
rON
Full
V+ = 4.5 V, INO, INC = 5 mA
VCOM = 1 V, 3.5 V
Room
Full
26
36.5
50
36.5
40.5
Room
Full
37
49
60
49
54
Room
Full
16
31
35
31
32
Dynamic Characteristics
Turn-On Timee
tON
Turn-Off Timee
tOFF
Break-Before-Make Time
Delaye
Charge Injectione
RL = 300 Ω, CL = 35 pF
VNO, VNC = 3.5 V, See Figure 2
tD
DG419L Only, VNO, VNC = 3.5 V
RL = 300 Ω, CL = 35 pF
Room
19
QINJ
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
0.4
Room
Full
0.02
Room
Full
- 0.002
Room
Full
Room
Full
0.002
ns
pC
Power Supplies
Positive Supply Currente
I+
Negative Supply Currente
IVIN = 0 or VL
Logic Supply Currente
Ground Currente
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IL
IGND
- 0.002
1
7.5
-1
- 7.5
1
5
-1
-5
1
7.5
-1
- 7.5
1
5
µA
-1
-5
Document Number: 71763
S-71009–Rev. E, 14-May-07
DG417L/418L/419L
Vishay Siliconix
SPECIFICATIONS (SINGLE SUPPLY 3 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V- = 0 V
VL = 3 V, VIN = 2.0 V, 0.4 Vf
A Suffix Limits
- 55 to 125 °C
Tempb
Typc
D Suffix Limits
- 40 to 85 °C
Mind
Maxd
Mind
Maxd
Unit
0
3
0
3
V
70
75
Ω
Analog Switch
Analog Signal Rangee
On-Resistance
Switch Off
Leakage Currenta
Channel On
Leakage Currenta
VANALOG
rON
INO(off)
INC(off)
ICOM(off)
ICOM(on)
Full
V+ = 2.7 V, V- = 0 V
Room
INO, INC = 5 mA, VCOM = 0.5, 2.2 V
Full
V+ = 3.3 , V- = 0 V
VCOM = 1, 2 V, VNO, VNC = 2, 1 V
V+ = 3.3 V, V- = 0 V
VNO, VNC = VCOM = 1, 2 V
70
80
47
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
- 1.5
1.5
-1
1
nA
Digital Control
Input Currenta
IINL or IINH
Full
0.005
Room
Full
65
75
95
75
85
Room
Full
26
41
45
41
43
tD
DG419L Only, VNO, VNC = 1.5 V
RL = 300 Ω, CL = 35 pF
Room
33
Charge Injectione
QINJ
Vg = 0 V, Rg = 0 Ω, CL = 10 nF
Room
1
Off-Isolatione
OIRR
Room
- 71
Channel-to-Channel
Crosstalke
XTALK
Room
- 77
Room
5.6
Room
16
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
Delay
Source Off Capacitancee
CNO(off)
CNC(off)
Channel On Capacitancee
CD(on)
RL = 300 Ω, CL = 35 pF
VNO, VNC = 1.5 V, See Figure 2
RL = 50 Ω, CL = 5 pF , f = 1 MHz
f = 1 MHz
ns
pC
dB
pF
Notes:
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 71763
S-71009–Rev. E, 14-May-07
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DG417L/418L/419L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
80
T = 25 °C
IS = 5 mA
r ON – On-Resistance (Ω)
r ON – On-Resistance (Ω)
50
V+ = 2.7 V
40
30
V+ = 4.5 V
20
V+ = 10.8 V
V+ = 2.7 V
IS = 5 mA
70
A = 125 °C
B = 85 °C
C = 25 °C
D = - 40 °C
E = - 55 °C
60
A
B
50
V+ = 4.5 V
C
40
D
E
A
B
30
C
D
20
E
10
10
0
0
0
3
6
9
12
0
1
VCOM – Analog Voltage (V)
30
4
5
10000
V± =± 5V
IS = 5 mA
V±=±5V
VIN = 0 V
20
I+ – Supply Current (nA)
r ON – On-Resistance (Ω)
3
rON vs. Analog Voltage and Temperature
rON vs. VCOM and Supply Voltage
25
2
VCOM – Analog Voltage (V)
125 °C
85 °C
15
25 °C
- 40 °C
10
- 55 °C
1000
5
0
-5
-3
-1
1
3
100
- 55
5
- 35
- 15
VCOM – Analog Voltage (V)
25
45
65
85
105
125
105
125
Temperature (°C)
rON vs. Analog Voltage and Temperature
Supply Current vs. Temperature
10000
10 m
V+ = 12 V
V- = 0 V
1m
1000
100 µ
Leakage Current (pA)
I+ – Supply Current (nA)
5
10 µ
1µ
100 n
ICOM(on)
100
ICOM(off)
10
10 n
1
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
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1
- 55
- 35
- 15
5
25
45
65
85
Temperature (°C)
Leakage Current vs. Temperature
Document Number: 71763
S-71009–Rev. E, 14-May-07
DG417L/418L/419L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
90
80
t ON , t OFF – Switching Time (ns)
Leakage Current (pA)
V+ = 12 V
V- = 0 V
20
ICOM(off)/ICOM(on)
0
INO(off)/INC(on)
- 20
70
tON V+ = 3 V
60
50
40
tON V+ = 5 V
tON V+ = 12 V
30
20
10
- 40
0
2
4
6
8
10
0
- 55
12
tOFF V+ = 12 V
- 35
- 15
5
VCOM, VNO, VNC – Analog Voltage (V)
45
65
85
105
125
Switching Time vs. Temperature and
Single Supply Voltage
80
10
Loss
70
- 10
60
tON V+ = ± 3 V
50
40
tON V+ = ± 5 V
30
tON V+ = ± 6 V
20
tOFF V+ = ± 3 V
Loss, OIRR, X TALK (dB)
t ON , t OFF - Switching Time (ns)
25
Temperature (°C)
Leakage vs. Analog Voltage
- 30
- 50
OIRR
- 70
V+ = 3 V
V- = 0 V
RL = 50 Ω
- 90
10
tOFF V+ = ± 6 V
0
- 55 - 35
- 15 5
25
45
tOFF V+ = ± 5 V
65
85
105
- 110
125
0.1
1
10
Temperature (°C)
12
10
VL = V+
V+ = 12 V
8
Q – Charge Injection (pC)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
V+ = 5 V
V=± 5V
2
0
V+ = 3 V
-2
-4
-6
-8
0.2
0.0
2.0
1000
Insertion Loss, Off -Isolation
Crosstalk vs. Frequency
2.0
1.8
100
Frequency (Hz)
Switching Time vs. Temperature and
Dual Supply Voltage
VT – Switching Threshold (V)
tOFF V+ = 3 V
tOFF V+ = 5 V
- 10
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
Document Number: 71763
S-71009–Rev. E, 14-May-07
6.0
- 12
-6
-4
-2
0
2
4
6
8
10
12
VCOM – Analog Voltage (V)
Charge Injection vs. Analog Voltage)
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DG417L/418L/419L
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
VL
VLevel
Shift/
Drive
VIN
V+
GND
D
V-
Figure 1.
TEST CIRCUITS
VL
V+
Logic
Input
VINH
tr < 5 ns
tf < 5 ns
50 %
VINL
Switch
Input
VIN
VL
Switch
Output
V+
NO or NC
COM
tOFF
VOUT
VOUT
IN
RL
300 Ω
V-
GND
CL
35 pF
90 %
0.9 x VOUT
0V
Switch
Output
tON
VCL (includes fixture and stray capacitance)
RL
VOUT = VIN
Note:
RL + rON
Logic input waveform is inverted for switches that
have the opposite logic sense control
Figure 2. Switching Time
VL
V+
VL
VNO
VNC
Logic
Input
V+
tr < 5 ns
tf < 5 ns
VINL
COM
NO
VINH
VO
NC
RL
300 Ω
IN
GND
V-
CL
35 pF
VNC = VNO
VO
Switch
Output
90 %
0V
tD
tD
VCL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make (DG419L)
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Document Number: 71763
S-71009–Rev. E, 14-May-07
DG417L/418L/419L
Vishay Siliconix
TEST CIRCUITS
+5V
VL
+ 15 V
V+
NO or NC
Logic VINH
Input
VINL
COM
VS1
VO
NC or NO
VS2
RL
300 Ω
IN
tr < 5 ns
tf < 5 ns
50 %
tTRANS
CL
35 pF
tTRANS
VS1
V01
V-
GND
90 %
Switch
Output
10 %
V02
VS2
VCL (includes fixture and stray capacitance)
RL
VO = VS
RL + rON
Figure 4. Transition Time (DG419L)
VL
V+
VL
V+
ΔVO
VO
Rg
COM
NO or NC
IN
Vg
IN
VO
OFF
ON
CL
1 nF
Q = ΔVO x CL
V-
GND
OFF
IN dependent on switch configuration Input polarity determined
by sense of switch.
VVIN = 0 - V+
Figure 5. Charge Injection
VL
C
V+
C
VL
VS
VIN
NO or NC
V+
COM
Rg = 50 Ω
50 Ω
IN
0 V or 2.4 V
NC or NO
VOUT
GND
XTA LK Isolation = 20 log
V-
C
VOUT
VIN
V-
C = RF bypass
Figure 6. Crosstalk (DG419L)
Document Number: 71763
S-71009–Rev. E, 14-May-07
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DG417L/418L/419L
Vishay Siliconix
TEST CIRCUITS
V+
VL
C
C
NO or NC
COM
Rg = 50 Ω
RL
50 Ω
IN
0 V, 2.4 V
GND
V-
C
VOff Isolation = 20 log
C = RF Bypass
VCOM
VNO/NC
Figure 7. Off Isolation
VL
V+
C
C
VL
V+
COM
Meter
IN
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
NO or NC
GND
V-
C
f = 1 MHz
V-
Figure 8. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71763.
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Document Number: 71763
S-71009–Rev. E, 14-May-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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