Vishay DG441DY-T1-E3 Quad spst cmos analog switch Datasheet

DG441, DG442
Vishay Siliconix
Quad SPST CMOS Analog Switches
DESCRIPTION
FEATURES
The DG441, DG442 monolithic quad analog switches are
designed to provide high speed, low error switching of analog
and audio signals. The DG441 has a normally closed
function. The DG442 has a normally open function.
Combining low on-resistance (50 , typ.) with high speed
(tON 150 ns, typ.), the DG441, DG442 are ideally suited for
upgrading DG201A/202 sockets. Charge injection has been
minimized on the drain for use in sample-and-hold circuits.
• Halogen-free according to IEC 61249-2-21
Definition
• Low on-resistance: 50 
• Low leakage: 80 pA
• Low power consumption: 0.2 mW
• Fast switching action - tON: 150 ns
• Low charge injection - Q: - 1 pC
• DG201A/DG202 upgrades
• TTL/CMOS-compatible logic
• Single supply capability
• Compliant to RoHS Directive 2002/95/EC
To achieve high voltage ratings and superior switching
performance, the DG441, DG442 are built on Vishay
Siliconix’s high-voltage silicon-gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages to the supply levels when off.
BENEFITS
•
•
•
•
•
•
•
Less signal errors and distortion
Reduced power supply requirements
Faster throughput
Improved reliability
Reduced pedestal errors
Simplifies retrofit
Simple interfacing
APPLICATIONS
•
•
•
•
•
•
•
•
Audio switching
Battery powered systems
Data acquisition
Hi-Rel systems
Sample-and-hold circuits
Communication systems
Automatic test equipment
Medical instruments
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
IN1
16
1
IN2
D1
IN1
NC
IN2
D2
Key
D1
S1
V-
15
2
14
3
4
Dual-In-Line and SOIC
13
3
D2
S2
5
NC
20
19
18
S2
V-
5
17
V+
NC
6
DG441
16
NC
GND
7
Top View
15
NC
S4
8
14
S3
V+
12
1
S1
DG441
GND
2
4
LCC
Top View
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
9
D4
10
IN4
11
NC
12
IN3
13
D3
TRUTH TABLE
Logic
0
1
Logic "0" 0.8 V
Logic "1" 2.4 V
Document Number: 70053
S11-1066-Rev. J, 30-May-11
DG441
On
Off
DG442
Off
On
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441, DG442
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
Part Number
DG441DJ
DG441DJ-E3
16-pin plastic DIP
DG442DJ
DG442DJ-E3
DG441DY
DG441DY-E3
DG441DY-T1
DG441DY-T1-E3
- 40 °C to 85 °C
16-pin narrow SOIC
DG442DY
DG442DY-E3
DG442DY-T1
DG442DY-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter
V+ to V-
Limit
44
GND to V-
25
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
30
Digital Inputsa, VS, VD
Continuous Current (any terminal)
Current, S or D (pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
Power Dissipation (Package)b
Unit
V
mA
100
(AK suffix)
- 65 to 150
(DJ, DY suffix)
- 65 to 125
16-pin plastic DIPc
450
16-pin CerDIPd
900
16-pin narrow SOICd
900
LCC-20d
1200
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 12 mW/°C above 75 °C.
SCHEMATIC DIAGRAM Typical Channel
V+
5 V Reg
INX
V-
Level
Shift/
Drive
V+
GND
V-
Figure 1.
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Document Number: 70053
S11-1066-Rev. J, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441, DG442
Vishay Siliconix
SPECIFICATIONSa (Dual Supplies)
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Symbol
VIN = 2.4 V, 0.8 Vf
Temp.b
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
- 15
15
- 15
15
V
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
RDS(on)
On-Resistance Match Between
Channelse
RDS(on)
IS(off)
Switch Off Leakage Current
ID(off)
Channel On Leakage Current
ID(on)
Full
IS = - 10 mA, VD = ± 8.5 V
V+ = 13.5 V, V- = - 13.5 V
IS = - 10 mA, VD = ± 10 V
V+ = 15 V, V- = - 15 V
V+ = 16.5, V- = - 16.5 V
VD = ± 15.5 V, VS = ± 15.5 V
V+ = 16.5 V, V- = - 16.5 V
VS = VD = ± 15.5 V
Room
Full
50
Room
Full
85
100
85
100
4
5
4
5
Room
Full
± 0.01
- 0.5
- 20
0.5
20
- 0.5
-5
0.5
5
Room
Full
± 0.01
- 0.5
- 20
0.5
20
- 0.5
-5
0.5
5
Room
Full
± 0.08
- 0.5
- 40
0.5
40
- 0.5
- 10
0.5
10
Full
- 0.01
- 500
500
- 500
500
Full
0.01
- 500
500
- 500
500

nA
Digital Control
Input Current VIN Low
IIL
Input Current VIN High
IIH
Dynamic Characteristics
Turn-On Time
DG441
Turn-Off Time
DG442
Charge Injectione
Off Isolatione
Crosstalk (Channel-toChannel)
Source Off Capacitancee
Drain Off Capacitance
Channel On
e
Capacitancee
Power Supplies
Positive Supply Current
Negative Supply Current
Ground Current
Document Number: 70053
S11-1066-Rev. J, 30-May-11
VIN under test = 0.8 V,
All Other = 2.4 V
VIN under test = 2.4 V
All Other = 0.8 V
nA
tON
RL = 1 k, CL = 35 pF
Room
150
250
250
tOFF
VS = ± 10 V
See Figure 2
Room
90
120
120
Room
110
210
210
Q
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 
Room
-1
Room
60
Room
100
Room
4
Room
4
VANALOG = 0 V
Room
16
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
Full
Room
Full
Full
15
- 0.0001
OIRR
XTALK
CS(off)
CD(off)
CD(on)
RL = 50 , CL = 5 pF
f = 1 MHz
f = 1 MHz
I+
IIGND
- 15
ns
pC
dB
pF
100
-1
-5
- 100
100
-1
-5
- 100
µA
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441, DG442
Vishay Siliconix
SPECIFICATIONSa (Single Supply)
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
Parameter
VIN = 2.4 V, 0.8 Vf
Temp.b
RDS(on)
IS = - 10 mA, VD = 3 V, 8 V
V+ = 10.8 V
Room
Full
100
160
200
tON
RL = 1 k, CL = 35 pF
Room
300
450
450
Room
60
200
200
Room
2
Full
Room
Full
Full
15
- 0.0001
Symbol
Typ.c
Min.d
Max.d
Min.d
12
0
Max.d
Unit
12
V
160
200

Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
VANALOG
tOFF
Charge Injection
Q
Power Supplies
Positive Supply Current
I+
Negative Supply Current
Ground Current
IIGND
Full
VS = 8 V
See Figure 2
CL = 1nF, Vgen = 6 V, Rgen = 0 
V+ = 13.2 V, V- = 0 V
VIN = 0 or 5 V
0
- 15
ns
pC
100
-1
- 100
- 100
100
-1
- 100
- 100
µA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70053
S11-1066-Rev. J, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441, DG442
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
±5V
80
60
±8V
± 10 V
± 12 V
40
± 15 V
± 20 V
20
RDS(on) - Drain-Source On-Resistance ()
RDS(on) - Drain-Source On-Resistance (Ω)
100
0
V+ = 15 V
V- = - 15 V
70
60
125 °C
50
85°C
40
25 °C
30
20
- 55 °C
0 °C
- 40 °C
10
0
- 20
- 15
- 10
-5
0
5
10
15
20
- 15
- 10
- 5
VD - Drain Voltage (V)
0
5
10
15
VD - Drain Voltage (V)
RDS(on) vs. VD and Power Supply Voltage
RDS(on) vs. VD and Temperature
300
140
R DS(on) - Drain-Source On-Resistance ()
R DS(on) - Drain-Source On-Resistance ()
V- = 0 V
250
V+ = 5 V
200
150
8V
100
10 V
12 V
15 V
50
20 V
0
4
0
8
12
16
120
125 °C
85 °C
100
80
25 °C
60
- 55 °C
40
0 °C
- 40 °C
20
V+ = 12 V
V- = 0 V
0
20
0
2
4
VD - Drain Voltage (V)
6
8
10
12
VD - Drain Voltage (V)
RDS(on) vs. VD and Temperature
(Single 12-V Supply)
RDS(on) vs. VD and Unipolar
Power Supply Voltage
50
140
CL = 1 nF
40
120
Crosstalk
30
100
V+ = 15 V
V- = - 15 V
Q - (pC)
(- dB)
20
80
60
10
0
Off Isolation
40
V+ = 12 V
V- = 0 V
- 10
V+ = 15 V
V- = - 15 V
Ref. 10 dBm
20
- 20
0
- 30
100
1K
10K
100K
1M
f - Frequency (Hz)
Crosstalk and Off Isolation vs. Frequency
Document Number: 70053
S11-1066-Rev. J, 30-May-11
10M
- 10
-5
0
5
10
VS - Source Voltage (V)
Charge Injection vs. Source Voltage
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DG441, DG442
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
2.4
IS(off), ID(off)
0
1.6
VIN - (V)
I S, I D - (pA)
- 20
0.8
- 40
ID(on)
- 60
V+ = 15 V
V- = - 15 V
For I(off), V D = - VS
- 80
0
0
5
10
15
- 100
- 15
20
V+, V- Positive and Negative Supplies (V)
- 10
-5
5
0
10
15
VD or V S - Drain or Source Voltage (V)
Switching Threshold vs. Supply Voltage
Source/Drain Leakage Currents
10
50
V+
IS(off), ID(off)
44
40
0
S
5 V - CMOS
Compatible
D
- 10
V+ - (V)
I S, I D - (pA)
IN
IS(on) + ID(on)
- 20
30
V20
TTL Compatible
VIN = 0.8 V, 2.4 V
V+ = 12 V
V- = 0 V
For ID, V S = 0
For IS, V D = 0
- 30
10
CMOS
Compatible
3
0
- 40
0
2
4
6
8
10
12
0
- 20
- 10
VD or V S - Drain or Source Voltage (V)
- 30
- 40
- 50
V- - Negative Supply (V)
Operating Voltage
Source/Drain Leakage Currents (Single 12 V Supply)
160
500
V- = 0 V
140
tON
400
120
100
t - (ns)
t - (ns)
tON
300
80
200
tOFF
60
100
40
tOFF
20
0
± 10
± 12
± 14
± 16
± 18
± 20
± 22
Supply Voltage (V)
Switching Time vs. Power Supply Voltage
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8
10
12
14
16
18
20
22
VS - Source Voltage (V)
Switching Time vs. Power Supply Voltage
Document Number: 70053
S11-1066-Rev. J, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441, DG442
Vishay Siliconix
TEST CIRCUITS
+ 15 V
3V
Logic
Input
50 %
V+
IN
3V
0V
D
S
10 V
GND
V-
tr < 20 ns
tf < 20 ns
50 %
VO
RL
1 k
CL
35 pF
- 15 V
Switch
Input
VS
Switch
Output
0V
CL (includes fixture and stray capacitance)
tOFF
VO
80 %
80 %
tON
Note:
Logic input waveform is inverted for DG442.
Figure 2. Switching Time
+ 15 V
V
O
VO
V+
Rg
D
S
INX
VO
IN
CL
1 nF
3V
V-
GND
OFF
ON
OFF
(DG441)
INX
OFF
ON
Q = VO x CL
OFF
(DG442)
- 15 V
Figure 3. Charge Injection
C = 1 mF tantalum in parallel with 0.01 mF ceramic
+ 15 V
C
+ 15 V
C
V+
S1
VS
Rg = 50 
D1
V+
50 
IN1
0 V, 2.4 V
NC
0 V, 2.4 V
GND
RL
V-
RL
IN
0 V, 2.4 V
IN2
VO
D
Rg = 50 
VO
D2
S2
S
VS
GND
V-
C
C
- 15 V
- 15 V
XTA LK Isolation = 20 log
C = RF bypass
Off Isolation = 20 log
VS
VO
VS
VO
Figure 5. Off Isolation
Figure 4. Crosstalk
+ 15 V
C
S
V+
Meter
0 V, 2.4 V
IN
HP4192A
Impedance
Analyzer
or Equivalent
D
GND
V-
C
- 15 V
Figure 6. Source/Drain Capacitances
Document Number: 70053
S11-1066-Rev. J, 30-May-11
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DG441, DG442
Vishay Siliconix
APPLICATIONS
+ 24 V
+ 15 V
RL
V+
DG442
I=3A
150 
+ 15 V
VN0300 L, M
IN
+ 15 V
VIN
1/4 DG442
10 k
+ 15 V
GND
S
+
D
VOUT
-
CH
V-
IN
0 = Load Off
1 = Load On
-
H = Sample
L = Hold
Figure 8. Open Loop Sample-and-Hold
Figure 7. Power MOSFET Driver
VIN
- 15 V
+
+
-
VOUT
+ 15 V
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit accuracy of circuit.
V+
GAIN1
AV = 1
R1
90 k
GAIN2
AV = 10
R2
5 k
With SW4 Closed
VOUT
VIN
GAIN3
AV = 20
R3
4 k
GAIN4
AV = 100
R4
1 k
=
R1 + R2 + R3 + R4
= 100
R4
DG441 or DG442
V-
GND
- 15 V
Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70053.
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Document Number: 70053
S11-1066-Rev. J, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
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Package Information
Vishay Siliconix
PDIP: 16ĆLEAD
16
15
14
13
12
11
10
9
E
E1
1
2
3
4
5
6
7
8
D
S
Q1
A
A1
L
15°
MAX
C
B1
e1
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
Q1
S
B
eA
MILLIMETERS
Min
Max
INCHES
Min
Max
3.81
5.08
0.150
0.200
0.38
1.27
0.015
0.050
0.38
0.51
0.015
0.020
0.89
1.65
0.035
0.065
0.20
0.30
0.008
0.012
18.93
21.33
0.745
0.840
7.62
8.26
0.300
0.325
5.59
7.11
0.220
0.280
2.29
2.79
0.090
0.110
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
1.27
2.03
0.050
0.080
0.38
1.52
.015
0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Document Number: 71261
06-Jul-01
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Package Information
Vishay Siliconix
CERDIP: 16ĆLEAD
16
15
14
13
12
11
10
9
E1 E
1
2
3
4
5
6
7
8
D
S
Q1
A
A1
L1
L
e1
C
B
B1
MILLIMETERS
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
L1
Q1
S
∝
eA
INCHES
Min
Max
Min
Max
4.06
5.08
0.160
0.200
0.51
1.14
0.020
0.045
0.38
0.51
0.015
0.020
1.14
1.65
0.045
0.065
0.20
0.30
0.008
0.012
19.05
19.56
0.750
0.770
7.62
8.26
0.300
0.325
6.60
7.62
0.260
0.300
2.54 BSC
∝
0.100 BSC
7.62 BSC
0.300 BSC
3.18
3.81
0.125
0.150
3.81
5.08
0.150
0.200
1.27
2.16
0.050
0.085
0.38
1.14
0.015
0.045
0°
15°
0°
15°
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5403
Document Number: 71282
03-Jul-01
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Packaging Information
Vishay Siliconix
20ĆLEAD LCC
A1
D
L1
A
Dim
28
e
1
2
E
A
A1
B
D
E
e
L
L1
MILLIMETERS
Min
Max
INCHES
Min
Max
1.37
2.24
0.054
0.088
1.63
2.54
0.064
0.100
0.56
0.71
0.022
0.028
8.69
9.09
0.342
0.358
8.69
9.09
0.442
0.358
1.27 BSC
0.050 BSC
1.14
1.40
0.045
0.055
1.96
2.36
0.077
0.093
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5321
L
Document Number: 71290
02-Jul-01
B
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
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Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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