Vishay DG458DJ-E3 Fault-protected single 8-ch/differential 4-ch analog multiplexer Datasheet

DG458/459
Vishay Siliconix
Fault-Protected Single 8-Ch/Differential 4-Ch Analog Multiplexers
DESCRIPTION
FEATURES
The DG458 and DG459 are 8-channel single-ended and
• Fault and Overvoltage Protection
4-channel differential analog multiplexers, respectively,
• All Channels Off When Power Off
incorporating fault protection. A series n-p-n MOSFET
• Latchup-Proof
structure provides device and signal-source protection in the
• Fast Switching - TA: 200 ns
event of power loss or overvoltages. Under fault conditions
• Break-Before-Make Switching
the multiplexer input (or output) appears as an open circuit
• Low On-Resistance: 180 Ω
and only a few nanoamperes of leakage current will flow.
• Low Power Consumption: 3 mW
This protects not only the multiplexer and the circuitry
• TTL and CMOS Compatible Inputs
Pb-free
Available
RoHS*
COMPLIANT
following it, but also protects the sensors or signal sources
BENEFITS
which drive the multiplexer.
The DG458 and DG459 can withstand continuous
overvoltage inputs up to ± 35 V. All digital inputs have TTL
compatible logic thresholds. Break-before-make operation
prevents channel-to-channel interference.
•
•
•
•
•
•
Improved Ruggedness
Power Loss Protection
Prevents Adjacent Channel Crosstalk
Standard Logic Interface
Superior Accuracy
Fast Settling Time
The DG458 and DG459 are improved pin-compatible
replacements
for
HI-508A/509A
and
MAX358/359
APPLICATIONS
•
•
•
•
•
multiplexers.
Data Acquisition Systems
Industrial Process Control Systems
Avionics Test Equipment
High-Rel Control Systems
Telemetry
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG459
DG458
Dual-In-Line
Dual-In-Line
A0
EN
VS1
S2
S3
S4
D
16
1
2
Decoders/Drivers
15
3
14
4
13
5
12
6
11
7
10
8
9
A1
A0
A2
EN
GND
V-
V+
S1a
S5
S2a
S6
S3a
S7
S4a
S8
Da
Top View
16
1
2
Decoders/Drivers
15
3
14
4
13
5
12
6
11
7
10
8
9
A1
GND
V+
S1b
S2b
S3b
S4b
Db
Top View
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70064
S-71155–Rev. G, 11-Jun-07
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1
DG458/459
Vishay Siliconix
THRU TABLES AND ORDERING INFORMATION
TRUTH TABLE - DG458
TRUTH TABLE - DG459
A2
A1
A0
EN
On Switch
A1
A0
EN
On Switch
X
X
X
0
None
X
X
0
None
0
0
0
1
1
0
0
1
1
0
0
1
1
2
0
1
1
2
0
1
0
1
3
1
0
1
3
0
1
1
1
4
1
1
1
4
1
0
0
1
5
1
0
1
1
6
1
1
0
1
7
1
1
1
1
8
Logic "0" = VAL ≤ 0.8 V
Logic "1" = VAH ≥ 2.4 V
X = Don’t Care
ORDERING INFORMATION
Temp Range
Package
Part Number
DG458DJ
DG458DJ-E3
- 40 to 85 °C
16-Pin Plastic DIP
DG459DJ
DG459DJ-E3
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
V+ to V-
Unit
44
V+ to GND
22
V- to GND
VEN, VA Digital Input
- 25
(V-) - 4 to (V+) + 4
VS, Analog Input Overvoltage with Power On
(V-) - 20 to (V+) + 20
VS, Analog Input Overvoltage with Power Off
- 35 to + 35
Continuous Current, S or D
20
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max)
40
Storage Temperature
a
Power Dissipation (Package)
(AK Suffix)
- 65 to 150
(DJ Suffix)
- 65 to 125
16-Pin Plastic DIPB
600
16-Pin CerDIPC
1000
d
1000
LCC-20
V
mA
°C
mW
Notes:
a. All leads soldered or welded to PC board.
b. Derate 6.3 mW/°C above 75 °C.
c. Derate 12 mW/°C above 75 °C.
d. Derate 10 mW/°C above 75 °C.
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Document Number: 70064
S-71155–Rev. G, 11-Jun-07
DG458/459
Vishay Siliconix
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VAL = 0.8 V, VAH = 2.4 Vf
Tempb
Typc
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
10
- 10
Parameter
Analog Switch
Symbol
Analog Signal Rangee
VANALOG
Full
VD = ± 9.5 V, IS = - 400 µA
0.45
rDS(on)
Room
Full
1.2
1.5
400
Drain-Source
On-Resistance
rDS(on) Matching Between Channelsh
Source Off Leakage Current
Drain Off Leakage Current
Differential Off Drain
Leakage Current
Unit
10
V
1.5
1.8
400
VD = ± 5 V, IS = - 400 µA
Room
180
ΔrDS(on)
VD = 0 V, IS = - 400 µA
Room
6
IS(off)
VEN = 0 V, VD = ± 10 V
VS = ± 10 V
Room
Full
0.03
- 0.5
- 50
0.5
50
-1
- 20
1
20
Room
Full
Room
Full
0.1
-1
- 200
-1
- 100
1
200
1
100
-1
- 50
-2
- 25
1
50
2
25
- 50
50
- 20
20
-2
- 200
-2
- 100
2
200
2
100
-5
- 50
-5
- 25
5
50
5
25
ID(off)
IDIFF
VEN = 0 V
VD = ± 10 V
VS = ± 10 V
DG458
DG459
DG459 Only
ID(on)
0.1
Room
DG458
Drain On Leakage Current
- 10
Maxd
VS = VD = ± 10 V
DG459
Room
Full
Room
Full
0.1
0.05
kΩ
Ω
%
nA
Fault
Output Leakage Current
(with Overvoltage)
Input Leakage Current
(with Overvoltage)
Input Leakage Current
(with Power Supplies Off)
ID(off)
IS(off)
VS = ± 33 V, VD = 0 V
See Figure 1
VS = ± 25 V, VD = 10 V,
See Figure 1
VS = ± 25 V, VSUPS = 0 V
VD = A0, A1, A2, EN = 0 V
Room
0.02
nA
Room
0.005
-5
5
- 10
10
Room
0.001
-2
2
-5
5
µA
Digital Control
Input Low Threshold
VAl
Full
Input Low Threshold
VAL
Full
2.4
Full
-1
Logic Input Control
Document Number: 70064
S-71155–Rev. G, 11-Jun-07
IA
VA = 2.4 V or 0.8 V
0.8
0.8
2.4
1
-1
1
V
µA
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DG458/459
Vishay Siliconix
SPECIFICATIONSa
Parameter
Dynamic Characteristics
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VAL = 0.8 V, VAH = 2.4 Vf
Tempb
Typc
tA
See Figure 3
Room
200
Break-Before-Make Interval
tOPEN
See Figure 4
Enable Turn-On Time
tON(EN)
Room
Room
Full
Room
Full
Room
45
140
Room
1.5
Room
90
Room
5
Transition Time
See Figure 5
Enable Turn-Off Time
tOFF(EN)
Settling Time
ts
Off Isolation
OIRR
Logic Input Capacitance
Cin
Source Off Capacitance
CS(off)
Drain Off Capacitance
CD(off)
Drain On Capacitance
CD(on)
To 0.1 %
To 0.01 %
VEN = 0 V, RL = 1 kΩ
CL = 15 pF, VS = 3 VRMS
f = 100 kHz
f = 1 MHz
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Mind
Maxd
500
10
500
250
500
250
500
0.5
Room
5
DG458
Room
15
DG459
Room
10
DG458
Room
40
DG459
Room
35
Room
Full
Room
Full
0.05
Unit
10
250
500
250
500
50
Maxd
ns
µs
dB
pF
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I-
VEN = 5.0 or 0 V, VA = 0 V
Power Supply Range for
Continuous Operation
Room
- 0.01
0.1
0.2
0.1
0.2
- 0.1
- 0.2
± 4.5
- 0.1
- 0.2
± 18
± 4.5
± 18
mA
V
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. When the analog signal exceeds the + 13.5 V or - 12 V, rDS(on) starts to rise until only leakage currents flow.
rDS(on) MAX - rDS(on) MIN
x 100 %
h. ΔrDS(on) =
rDS(on) AVE
(
)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70064
S-71155–Rev. G, 11-Jun-07
DG458/459
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1 mA
700
r DS(on) – Drain-Source On-Resistance (Ω)
V+ = V- = 0 V
100 µA
I S – Source Current
10 µA
1 µA
100 nA
10 nA
Operating Range
1 nA
100 pA
10 pA
1 pA
- 50 - 40 - 30 - 20 - 10
V+ = 15 V
V- = - 15 V
600
500
25 °C
400
85 °C
300
200
100
- 55 °C
0
0
10
20
30
40
50
- 10 - 7.5
- 5.0
VS – Source Voltage (V)
- 2.5
2.5
0
7.5
5.0
10
VD – Drain Voltage (V)
rDS(on) vs. VD and Temperature
Input Leakage vs. Input Voltage
1 mA
10
V+ = 15 V
V- = - 15 V
VS, VD = ± 10 V
V+ = 15 V
V- = - 15 V
100 µA
10 µA
1 µA
I S, I D (nA)
I S – Source Current
125 °C
0 °C
100 nA
10 nA
Operating Range
ID(on)
1
ID(off)
IS(off)
1 nA
0.10
100 pA
10 pA
1 pA
- 50 - 40 - 30 - 20 - 10
0.01
0
10
20
30
40
50
- 55 - 35 - 15
5
VS – Source Voltage (V)
45
65
85
105
125
Temperature (°C)
Leakage Currents vs. Temperature
Off-Channel Leakage Currents vs. Input Voltage
2000
1 nA
r DS(on) Drain-Source On-Resistance (Ω)
V+ = 15 V
V- = - 15 V
100 pA
I D – Drain Current
25
10 pA
1 pA
0.1 pA
- 50 - 40 - 30 - 20 - 10
0
10
20
30
40
VS – Source Voltage (V)
Output Leakage vs. Off-Channel Overvoltage
Document Number: 70064
S-71155–Rev. G, 11-Jun-07
50
1600
± 5V
Supplies
1200
± 10 V
800
± 15 V
400
± 20 V
0
- 20
- 15
- 10
-5
0
5
10
15
20
25
VS – Source Voltage (V)
rDS(on) vs. Input Voltage
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DG458/459
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
- 110
25
V+ = 15 V
V- = - 15 V
20
IS(off)
10
- 90
ID(off)
5
(dB)
I S, I D – Leakage (pA)
15
V+ = 15 V
V- = - 15 V
RL = 1 kΩ
- 100
0
- 80
Off Isolation
-5
ID(on)
- 10
Crosstalk
- 70
- 15
- 60
- 20
- 50
- 25
- 15 - 12 - 9
-6
-3
1
3
6
9
12
15
10 k
Leakage Current vs. VS, VD
Off Isolation and XTALK vs. Frequency
0
tTRANS
V+ = 15 V
V- = - 15 V
- 10
Charge Injection (pC)
200
Time (ns)
10 M
f – Frequency (Hz)
240
160
tON(EN)
120
VIN = 2 V
80
- 20
- 30
CL = 1 nF
- 40
- 50
tOFF(EN)
CL = 10 nF
- 60
40
±5
± 10
± 15
- 10
± 20
-5
0
5
10
VS – Source Voltage (V)
V+, V- – Positive and Negative Supplies (V)
Switching Times (tTRANS, tON, tOFF) vs. ± VSUPPLIES
QINJ vs. VS
280
3.0
V+ = 15 V
V- = - 15 V
240
2.5
tTRANS
200
2.0
tON(EN)
160
V TH (V)
Time (ns)
1M
100 k
VD or VS – Drain or Source Voltage (V)
120
tOPEN
1.5
1.0
80
0.5
tOFF(EN)
40
0
0
- 55 - 35 - 15
5
25
45
65
85
105
Temperature (°C)
Switching Times vs. Temperature
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125
2.5
5
7.5
10
12.5
15
17.5
20
V+, Supply (V)
Logic Input Switching Threshold vs. ± VSUPPLIES
Document Number: 70064
S-71155–Rev. G, 11-Jun-07
DG458/459
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
VVREF
GND
D
V+
A0
VV+
Level
Shift
AX
Decode/
Drive
S1
VV+
EN
Sn
V-
TEST CIRCUITS
+ 15 V
V+
IS(off)
± VS
ID(off)
Sn
A
D
A
VD
V-
- 15 V
Figure 2. Analog Input Overvoltage
+ 15 V
+ 2.4 V
V+
EN
S1b
*
A2
A1
Logic
Input
±5V
DG458
A0
S8b
GND
VO
Switch
Output
VO
V1 MΩ
50 %
0V
± 5V
Db
50 Ω
3V
35 pF
+5V
90 %
-5V
tA
- 15 V
* = S1a - S 8a, S2b - S 7b, Da
Figure 3. Transition Time
Document Number: 70064
S-71155–Rev. G, 11-Jun-07
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DG458/459
Vishay Siliconix
TEST CIRCUITS
+ 15 V
V+
EN
+ 2.4 V
S1 , S8
Logic
Input
+5V
3V
0V
S2 - S 7
A0
DG458
A1
A2
Db, D
GND
Switch
Output
VO
V-
50 Ω
50 %
VO
1 kΩ
- 15 V
0V
35 pF
tOPEN
Figure 4. Break-Before-Make Time
+ 15 V
V+
S1
Enable
Input
+5V
EN
S2 - S 8
VS
DG458
A2
GND
50 %
0V
A0
A1
3V
V-
50 Ω
Switch
Output
D
1 kΩ
VO
35 pF
VO
90 %
0V
tON(EN)
tOF
- 15 V
Figure 5. Enable Delay
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Document Number: 70064
S-71155–Rev. G, 11-Jun-07
DG458/459
Vishay Siliconix
DETAILED DESCRIPTION
The Vishay Siliconix DG458 and DG459 multiplexers are
fully fault- and overvoltage-protected for continuous input
voltages up to ± 35 V whether or not voltage is applied to the
power supply pins (V+, V-). These multiplexers are built on a
high-voltage junction-isolated silicon-gate CMOS process.
Two n-channel and one p-channel MOSFETs are connected
in series to form each channel (Figure 1).
Within the normal analog signal range (± 10 V), the rDS(on)
variation as a function of analog signal voltage is comparable
to that of the classic parallel N-MOS and P-MOS switches.
- 35 V
Overvoltage
n-Channel
MOSFET
is On
Q1 - 35 V
S
D
G
Q2
S
D
G
Q3
S
+ 35 V
Overvoltage
D
n-Channel
MOSFET
is Off
G
p-Channel
MOSFET
is Off
(a) Overvoltage with Multiplexer Power Off
When the analog signal approaches or exceeds either
supply rail, even for an on-channel, one of the three series
MOSFETs gets cut-off, providing inherent protection against
overvoltages even if the multiplexer power supply voltages
are lost. This protection is good up to the breakdown voltage
of the respective series MOSFETs. Under fault conditions
only sub microamp leakage currents can flow in or out of the
multiplexer. This not only provides protection for the
multiplexer and succeeding circuitry, but it allows normal,
undisturbed operation of all other channels. Additionally, in
case of power loss to the multiplexer, the loading caused on
the transducers and signal sources is insignificant, therefore
redundant multiplexers can be used on critical applications
such as telemetry and avionics.
- 15 V
Q2
Q1
- 35 V
Overvoltage
n-Channel
MOSFET
is On
+ 15 V
- 15 V
+ 15 V
- 15 V
Q3
+ 35 V
Overvoltage
n-Channel
MOSFET
is Off
p-Channel
MOSFET
is Off
(b) Overvoltage with Multiplexer Power On
Figure 5. Overvoltage Protection
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70064.
Document Number: 70064
S-71155–Rev. G, 11-Jun-07
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9
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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