ETC1 DH7101060T10 Tuning varactor Datasheet

TUNING VARACTOR
Selection guide
TUNING VARACTOR
Selection Guide
PAGE
SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR
1-32
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
-
VBR = 30 V
1-34
-
VBR = 45 V
1-35
SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
1-36
MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
1-39
A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the
same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast
band receivers.
1-31
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TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
SOT23 SURFACE MOUNT SILICON ABRUPT
TUNING VARACTOR
Description
This series of silicon tuning varactors have an epitaxial mesa design with a high temperature
passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family
is designed for a low cost medium to high volume market that may be supplied in tape and reel
for automated pick and place assembly on surface mount circuit boards.
Applications
The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.
They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.
Typical applications include low noise narrow and moderate frequency bandwidth applications
(VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned
filters, phase shifters, delay line, etc.
NOTE: Variation of the junction capacitance versus reverse voltage follows this equation:
Cj (Vr) = Cj (0 V)
1 + Vr
φ
[
Vr :
φ :
γ :
]
γ
Reverse voltage
Built-in potential .7V for Si
.5 for abrupt tuning varactor
1-32
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TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
Electrical characteristics at Ta = +25° C
Reverse breakdown voltage, Vb = @10 µA: 30 V min.
Electrical
parameters
Breakdown
voltage
VBR
Test Conditions
IR = 10 µA
Type
Junction
capacitance
Cj
F = 1 MHz
V
pF
(1)
DH71010
30
DH71016
30
DH71020
30
DH71030
30
DH71045
30
DH71067
30
DH71100
30
(1)
Other tolerance on request
Figure
of merit
Q
Cj0V/Cj30V
VR = 4 V
min.
Tuning
ratio
1.0 ± 20%
1.6 ± 20%
2.0 ± 20%
3.0 ± 20%
4.5 ± 20%
6.7 ± 10%
10 ± 10%
VR = 4 V
F = 50 MHz
typ.
typ.
4.0
4.5
4.6
4.7
4.8
4.9
5.0
4300
4100
3900
3400
2200
2600
2200
Temperature ranges:
Operating junction (Tj):
-55° C to +125° C
Storage:
-65° C to +150° C
Packages
SOD323
SOT23
SOT23
SOT23
SOT143
DH71010-60
DH71016-60
DH71020-60
DH71030-60
DH71045-60
DH71067-60
DH71100-60
DH71010-51
DH71016-51
DH71020-51
DH71030-51
DH71045-51
DH71067-51
DH71100-51
DH71010-53
DH71016-53
DH71020-53
DH71030-53
DH71045-53
DH71067-53
DH71100-53
DH71010-54
DH71016-54
DH71020-54
DH71030-54
DH71045-54
DH71067-54
DH71100-54
DH71010-70
DH71016-70
DH71020-70
DH71030-70
DH71045-70
DH71067-70
DH71100-70
Packages
DH71010
DH71016
DH71020
DH71030
DH71045
DH71067
DH71100
(1) Other configuration available on request.
How to order?
DH71010
Diode type
-
51
Package
information
51: single SOT23
53: dual common
cathode SOT23
54: dual common
anode SOT23
60: single SOD323
70: dual SOT143
T3
Conditioning
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk
1-33
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
VBR 30 V
Description
This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to Ku band.
CHIP AND PACKAGED DIODES
VBR (10 µA) ≥ 30 V
CHIP DIODES
Characteristics at 25°C
Gold
dia
Ø
Test Conditions
Type
Case
µm
junction
capacitance
Cj
Fig. of
merit
Q
VR = 4 V
VR = 4 V
f = 1 MHZ
f = 50 MHZ
pF
typ.
± 20 % (2)
min.
PACKAGED DIODES (1)
Standard cases
Other cases
Tuning
ratio
CTO/CT30
Tuning
ratio
CTO/CT30
CASE
CAPACITANCE
Cb
CASE
CAPACITANCE
Cb
Type
Case
Case
min.
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
EH71004
EH71006
EH71008
EH71010
EH71012
EH71016
EH71020
EH71025
EH71030
EH71037
EH71045
EH71054
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
50
60
70
80
90
100
110
120
140
150
170
180
0.4
0.6
0.8
1.0
1.2
1.6
2.0
2.5
3.0
3.7
4.5
5.4
± 10 % (2)
4500
4500
4400
4300
4200
4100
3900
3600
3400
3200
3000
2800
DH71004
DH71006
DH71008
DH71010
DH71012
DH71016
DH71020
DH71025
DH71030
DH71037
DH71045
DH71054
Cb= 0.18 pF (3)
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
Cb= 0.18 pF (3)
EH71067
EH71080
EH71100
EH71120
EH71150
EH71180
EH71200
EH71220
EH71270
EH71330
EH71390
EH71470
EH71560
EH71680
EH71820
EH71999
C2a
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2c
C2c
C2c
C2c
C2c
C2d
C2d
200
220
250
270
300
330
350
370
410
450
500
540
590
650
720
800
6.7
8.0
10.0
12.0
15.0
18.0
20.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
2600
2400
2200
2000
1800
1700
1500
1400
1300
1200
950
750
650
500
400
300
DH71067
DH71080
DH71100
DH71120
DH71150
DH71180
DH71200
DH71220
DH71270
DH71330
DH71390
DH71470
DH71560
DH71680
DH71820
DH71999
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
3.0
3.4
3.7
4.0
4.3
4.5
4.6
4.6
4.7
4.7
4.8
4.8
Cb= 0.12 pF (3) min.
M208
3.3
M208
3.7
M208
4.0
M208
4.3
M208
4.5
M208
4.6
M208
4.7
M208
4.8
M208
4.8
M208
4.8
M208
4.9
M208
4.9
Cb= 0.2 pF (3)
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
(1) Custom cases available on request
(2) Closer capacitance tolerances available on request
Temperature ranges:
Operating junction (Tj) : -55° C to +150° C
(3) CT = Cj + Cb
Storage
1-34
SALES OFFICES: VISIT OUR WEB SITE AT
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: -65° C to +175° C
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
VBR 45 V
Description
This series of high Q epi-junction microwave tuning varactors (45 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to X band.
Chip diodes
Chip and packaged diodes
VBR (10 µA) ≥ 45 V
GOLD
Characteristics at 25° C DIA
Ø
Test conditions
Type
Case
Junction
Capacitance
Cj
Fig. of
Merit
Q
VR = 4 V
VR = 4 V
f = 1 MHZ
f = 50 MHZ
STANDARD CASES
Packaged diodes (1)
OTHER CASES
Tuning
Ratio
CTO/CT45
Tuning
Ratio
CTO/CT45
Case
Capacitance
Cb
Case
Capacitance
Cb
Case
µm
pF
Type
Case
typ.
± 20 % (2)
min.
Cb = 0.18 pF (3)
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
Cb =0.18pF (3)
min. Cb
3.5
3.9
4.2
4.5
4.7
5.0
5.2
5.4
5.5
5.6
5.7
5.8
Cb
EH72004
EH72006
EH72008
EH72010
EH72012
EH72016
EH72020
EH72025
EH72030
EH72037
EH72045
EH72054
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
60
80
90
110
110
120
140
150
170
190
210
230
0.4
0.6
0.8
1.0
1.2
1.6
2.0
2.5
3.0
3.7
4.5
5.4
± 10 % (2)
3000
2900
2800
2700
2700
2600
2500
2400
2300
2200
2000
1900
DH72004
DH72006
DH72008
DH72010
DH72012
DH72016
DH72020
DH72025
DH72030
DH72037
DH72045
DH72054
EH72067
EH72080
EH72100
EH72120
EH72150
EH72180
EH72200
EH72220
EH72270
EH72330
EH72390
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2c
C2c
C2c
C2c
250
280
310
340
380
420
440
470
520
570
620
6.7
8.0
10.0
12.0
15.0
18.0
20.0
22.0
27.0
33.0
39.0
± 10 % (2)
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
800
DH72067
DH72080
DH72100
DH72120
DH72150
DH72180
DH72200
DH72220
DH72270
DH72330
DH72390
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
Cb = 0.18 pF (3)
5.9
5.9
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
EH72470
EH72560
EH72680
C2d
C2d
C2d
680
740
820
47.0
56.0
68.0
± 10 % (2)
700
600
450
DH72470
DH72560
DH72680
BH28
BH28
BH28
Cb = 0.4 pF (3)
6.0
6.0
6.0
EH72820
EH72999
C2g
C2g
900
1000
82.0
100.0
350
250
DH72820
DH72999
BH141
BH141
6.0
6.0
= 0.12 pF (3)
min.
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
= 0.2pF (3)
3.7
4.1
4.5
4.7
4.9
5.2
5.5
5.6
5.7
5.7
5.8
5.9
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
(1)
(2)
Custom cases available on request
Closer capacitance tolerances available on request
Temperature ranges:
Operating junction (Tj) : -55° C to +150° C
(3)
CT = Cj + Cb
Storage
: -65° C to +175° C
1-35
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
PLASTIC PACKAGE, SURFACE MOUNT HYPERABRUPT
TUNING VARACTOR
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated mesa technology. This family is designed for a low cost medium to high volume market that
may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards.
Application
The DH76000 and DH77000 series hyperabrupt tuning varactor are offered in a large selection of
capacitance range. They provide the highest Q factor (low reverse series resistance). Typical
applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly)
from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase
shifters, delay lines...
20 Volt hyperabrupt junction varactors
Characteristics @ Ta=+25° C
Reverse breakdown voltage, Vb = 20 V min. @ 10 µA
Reverse Current, Ir = 200 nA @ 16 V
Test
conditions
Type
DH76010
DH76015
DH76022
DH76033
DH76047
DH76068
DH76100
DH76150
f = 1 MHz
Vr = 1 V
typ
2.5
3.6
5.2
8.0
11.0
16.0
23.0
35.0
Total capacitance (pF)
Ct
f = 1 MHz
f=1 MHz
Vr = 4 V
Vr = 12 V
±20 %
typ.
1.2
0.6
1.7
0.8
2.4
1.1
3.5
1.6
4.9
2.2
7.0
3.1
10.0
4.5
15.0
6.6
Temperature ranges:
Operating junction (Tj) : -55° C to +125° C
Storage : -55° C to +150° C
f = 1 MHz
Vr = 20 V
typ.
0.5
0.7
0.9
1.3
1.7
2.4
3.5
5.1
Tuning
ratio
Ct1V/Ct12V Ct1V/Ct20V
f = 1 MHz
f = 1 MHz
typ.
typ.
4.1
4.9
4.4
5.4
4.7
5.8
4.9
6.1
5.0
6.4
5.1
6.5
5.2
6.7
5.2
6.8
12 Volt hyperabrupt junction varactors
Characteristics @ Ta=+25° C
Reverse breakdown voltage, Vb = 12 V min. @ 10 µA
Reverse Current, Ir = 200 nA @ 8 V
Test
conditions
Type
f = 1 MHz
Vr = 1 V
typ
DH77033
DH77047
DH77068
DH77100
DH77150
6.0
8.5
12.0
18.0
27.0
Total capacitance (pF)
Ct
f = 1 MHz
f=1 MHz
Vr = 2.5 V
Vr = 4 V
±20 %
typ.
3.5
4.9
7.0
10.0
15.0
1.9
2.7
3.8
5.5
8.1
Temperature ranges:
Operating junction (Tj) : -55° C to +125° C
Storage : -55° C to +150° C
Tuning
ratio
Ct1V/Ct2.5V Ct1V/Ct4V
f = 1 MHz
f = 1 MHz
typ.
typ.
1.7
1.7
1.7
1.7
1.8
3.1
3.2
3.2
3.2
3.3
1-36
SALES OFFICES: VISIT OUR WEB SITE AT
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TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
Typical junction capacitance versus reverse voltage
Profils in Cj
100.00
10.00
Cj (pF)
76010
76015
76022
76033
76047
76068
76100
76150
1.00
0.01
10
0.1
100
0.10
VR (V)
Cj (pF)
100
10
DH77033
DH77047
DH77068
DH77100
DH77150
0.1
1
1
V (V)
10
1-37
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
Packages
SOD323
SOT23
SOT23
SOT23
SOT143
DH76010-60
DH76015-60
DH76022-60
DH76033-60
DH76047-60
DH76068-60
DH76100-60
DH76150-60
DH77033-60
DH77047-60
DH77068-60
DH77100-60
DH77150-60
DH76010-51
DH76015-51
DH76022-51
DH76033-51
DH76047-51
DH76068-51
DH76100-51
DH76150-51
DH77033-51
DH77047-51
DH77068-51
DH77100-51
DH77150-51
DH76010-53
DH76015-53
DH76022-53
DH76033-53
DH76047-53
DH76068-53
DH76100-53
DH76150-53
DH77033-53
DH77047-53
DH77068-53
DH77100-53
DH77150-53
DH76010-54
DH76015-54
DH76022-54
DH76033-54
DH76047-54
DH76068-54
DH76100-54
DH76150-54
DH77033-54
DH77047-54
DH77068-54
DH77100-54
DH77150-54
DH76010-70
DH76015-70
DH76022-70
DH76033-70
DH76047-70
DH76068-70
DH76100-70
DH76150-70
DH77033-70
DH77047-70
DH77068-70
DH77100-70
DH77150-70
Packages
DH76010
DH76015
DH76022
DH76033
DH76047
DH76068
DH76100
DH76150
DH77033
DH77047
DH77068
DH77100
DH77150
(1) Other configuration available on request.
How to order?
DH76150
Diode type
-
51
Package
information
51: single SOT23
53: dual common
cathode SOT23
54: dual common
anode SOT23
60: single SOD323
70: dual SOT143
T3
Conditioning
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk
1-38
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
TUNING VARACTOR
High Q silicon hyperabrupt junction tuning varactor
HIGH Q SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from
VHF up to Ku band.
Characteristics @ Ta = +25° C
Reverse breakdown voltage, Vb = @ 10 µA: 20 V min.
Reverse current,
Ir @ 16 V:
200 nA
Test
conditions
Type
Case (1)
DH76010 F27d
DH76015 F27d
DH76022 F27d
DH76033 F27d
DH76047 F27d
DH76068 F27d
DH76100 F27d
DH76150 F27d
(1)
Figure of
Total capacitance (pF)
merit (Q)
Ct
f = 50 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz
Vr = 4 V Vr = 1 V
Vr = 4 V Vr = 12 V Vr = 20 V
typ.
typ.
±20%
typ.
typ.
2200
2.5
1.2
0.6
0.5
2000
3.6
1.7
0.8
0.7
1700
5.2
2.4
1.1
0.9
1400
7.7
3.5
1.6
1.3
1000
11
4.9
2.2
1.7
700
16
6.9
3.0
2.4
400
23
10.2
4.5
3.5
140
34
15.2
6.6
5.1
Custom cases available on request
Tuning
ratio
Ct1V/Ct12V Ct1V/CT20V
f = 1 MHz
f = 1 MHz
typ.
typ.
4.1
4.9
4.4
5.4
4.7
5.8
4.9
6.1
5.0
6.4
5.1
6.5
5.2
6.7
5.2
6.8
Chip
EH76010
EH76015
EH76022
EH76033
EH76047
EH76068
EH76100
EH76150
Temperature ranges:
Operating junction (Tj) : -55° C to +150° C
Storage
: -65° C to +150° C
Typical junction capacitance reverse voltage
Profils in Cj
100.00
10.00
Cj (pF)
76010
76015
76022
76033
76047
76068
76100
76150
1.00
0.01
10
0.1
100
0.10
VR (V)
1-39
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
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