DC COMPONENTS CO., LTD. DMBT3906 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) 1 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .108(0.65) .089(0.25) 2 .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -40 - - V Collector-Emitter Breakdown Voltage BVCEO -40 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA ICEX - - -50 nA VCE=-30V, VBE=-3V Collector Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage (1) DC Current Gain Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Test Conditions IC=-10µA VCE(sat)1 - - -250 mV IC=-10mA, IB=-1mA VCE(sat)2 - -200 -400 mV IC=-50mA, IB=-5mA VBE(sat)1 -650 - -850 mV IC=-10mA, IB=-1mA VBE(sat)2 - -840 -950 mV IC=-50mA, IB=-5mA hFE1 60 - - - IC=-0.1mA, VCE=-1V hFE2 80 - - - IC=-1mA, VCE=-1V hFE3 100 - 300 - IC=-10mA, VCE=-1V hFE4 60 - - - IC=-50mA, VCE=-1V hFE5 30 - - - IC=-100mA, VCE=-1V fT 250 - - MHz - - 4.5 pF Cob 380µs, Duty Cycle 2% IC=-10mA, VCE=20V, f=100MHz VCB=-5V, f=1MHz, IE=0