DC COMPONENTS CO., LTD. R DMBTA55 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 Pinning .020(0.50) .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) 1 Absolute Maximum Ratings(TA=25oC) Symbol Rating Collector-Base Voltage Characteristic VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -4 V Collector Current IC -500 mA Total Power Dissipation PD 225 mW .091(2.30) .067(1.70) Unit Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .108(0.65) .089(0.25) 2 .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) C Electrical oCharacteristics (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -60 - - V IC=-100µA Collector-Emitter Breakdown Voltage BVCEO -60 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -4 - - V IE=-100µA ICBO - - -100 nA VCB=-60V Collector Cutoff Current Test Conditions ICEO - - -100 nA VCE=-50V Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.25 V IC=-100mA, IB=-10mA Base-Emitter On Voltage VBE(on) - - -1.2 V IC=-100mA, VCE=-1V DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width hFE1 80 - 250 - IC=-10mA, VCE=-1V hFE2 80 - - - IC=-100mA, VCE=-1V 50 - - MHz IC=-100mA, VCE=-1V fT 380µs, Duty Cycle 2%