DMN5L06DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage (1.0V max) Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2kV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.015 grams (approximate) • • • • • • SOT-26 D2 G1 S1 S2 G2 D1 ESD protected up 2kV TOP VIEW BOTTOM VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Thermal Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. Value 400 313 -65 to +150 Unit mW °C/W °C mA @TA = 25°C unless otherwise specified Electrical Characteristics ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol PD RθJA Tj, TSTG Continuous Pulsed (Note 3) Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Gate-Body Leakage Unit V V ID Value 50 ±20 305 800 @TA = 25°C unless otherwise specified @ TC = 25°C Symbol Min Typ Max Unit BVDSS IDSS 50 ⎯ ⎯ ⎯ ⎯ 60 V nA IGSS ⎯ ⎯ 1 500 50 μA nA nA VGS(th) 0.49 V 3.0 2.5 2.0 Ω ID(ON) |Yfs| VSD ⎯ ⎯ ⎯ ⎯ 1.4 ⎯ ⎯ 1.0 ⎯ ⎯ ⎯ 0.5 200 0.5 ⎯ ⎯ 1.4 A mS V Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 50 25 5.0 pF pF pF RDS (ON) Test Condition VGS = 0V, ID = 10μA VDS = 50V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN5L06DMK Document number: DS30927 Rev. 4 - 2 1 of 4 www.diodes.com September 2007 © Diodes Incorporated NEW PRODUCT DMN5L06DMK VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 10 1 0 0 -50 75 100 125 150 -25 25 50 0 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN5L06DMK Document number: DS30927 Rev. 4 - 2 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 2 of 4 www.diodes.com September 2007 © Diodes Incorporated NEW PRODUCT IDR, REVERSE DRAIN CURRENT (A) DMN5L06DMK IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current PD, POWER DISSIPATION (mW) 250 200 150 100 50 RθJA = 556 ° C/W 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (°C) Fig. 11 Derating Curve - Total DMN5L06DMK Document number: DS30927 Rev. 4 - 2 150 3 of 4 www.diodes.com September 2007 © Diodes Incorporated DMN5L06DMK Ordering Information (Note 6) Part Number DMN5L06DMK-7 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 G1 DAB Date Code Key Year Code 2006 T Month Code G2 D1 2007 U Jan 1 Feb 2 DAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September YM YM S2 S1 DAB NEW PRODUCT Notes: Case SOT-26 2008 V Mar 3 Apr 4 May 5 2009 W Jun 6 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D Package Outline Dimensions A SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D – – 0.95 F – – 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 – 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout E Z E C G Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C 2.40 E 0.95 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN5L06DMK Document number: DS30927 Rev. 4 - 2 4 of 4 www.diodes.com September 2007 © Diodes Incorporated