DMN5/L06VK/L06VAK/010VAK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Dual N-Channel MOSFET • • Low On-Resistance • • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020 • Fast Switching Speed • Terminal Connections: See Diagram • Low Input/Output Leakage • • Ultra-Small Surface Mount Package Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Weight: 0.006 grams (approximate) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protected up to 2kV • Qualified to AEC-Q101 standards for High Reliability Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 SOT563 D2 G1 S1 D2 S1 G1 S2 G2 D1 G2 S2 D1 ESD protected up to 2kV DMN5L06VAK DMN5010VAK DMN5L06VK Top View Ordering Information (Note 4) Part Number DMN5L06VK-7 DMN5L06VK-13 DMN5L06VAK-7 DMN5L06VAK-13 DMN5010VAK-7 DMN5010VAK-13 Notes: Case SOT563 SOT563 SOT563 SOT563 SOT563 SOT563 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information (Note 5) DMN5010VAK DMN5L06VAK DMN5L06VK D2 G1 S1 KAB YM S2 G2 Month Code Note: Jan 1 G1 xxx YM G2 D1 Date Code Key Year 2006 Code T S1 D2 KAB= DMN5L06VK Product Type Marking Code (See Note 5) YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) S2 xxx = Product Type Marking Code: KAE or KAC (See Note 5) YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) D1 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). DMN5/L06VK/L06VAK/010VAK Document number: DS30769 Rev. 11 - 2 1 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN5/L06VK/L06VAK/010VAK Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Drain Source Voltage Characteristic VDSS 50 V Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR 50 V V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 Drain Current (Note 6) Continuous Pulsed ID IDM 280 1.5 mA A Symbol PD RθJA TJ, TSTG Value 250 500 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = +25°C Gate-Body Leakage Symbol Min Typ Max Unit Test Condition BVDSS 50 — — V VGS = 0V, ID = 10µA IDSS — — 60 nA VDS = 50V, VGS = 0V IGSS — — 1 500 50 µA nA nA VGS = ±12V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VGS(th) 0.49 0.30 — 1.0 1.2 V VDS = VGS, ID = 250µA RDS (ON) — — — — — — 3.0 2.5 2.0 Ω VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage @TJ = +25°C @TJ = +0°C~ +85°C (Note 8) Static Drain-Source On-Resistance ID(ON) 0.5 1.4 — A Forward Transconductance |Yfs| 200 — — mS Source-Drain Diode Forward Voltage VSD 0.5 — 1.4 V On-State Drain Current VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — — 50 pF Output Capacitance Coss — — 25 pF Reverse Transfer Capacitance Crss — — 5.0 pF Notes: VDS = 25V, VGS = 0V f = 1.0MHz 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN5/L06VK/L06VAK/010VAK Document number: DS30769 Rev. 11 - 2 2 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN5/L06VK/L06VAK/010VAK VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics RDS(on), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) 10 0 -50 75 100 125 -25 25 50 0 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0 150 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(on), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) RDS(on), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) 10 TA = 25°C Pulsed ID = 280mA 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN5/L06VK/L06VAK/010VAK Document number: DS30769 Rev. 11 - 2 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 3 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN5/L06VK/L06VAK/010VAK IDR, REVERSE DRAIN CURRENT (A) RDS(on), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) VGS = 10V Pulsed ID = 280mA IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (°C) Fig. 11 Derating Curve - Total DMN5/L06VK/L06VAK/010VAK Document number: DS30769 Rev. 11 - 2 150 4 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN5/L06VK/L06VAK/010VAK Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A B SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DMN5/L06VK/L06VAK/010VAK Document number: DS30769 Rev. 11 - 2 5 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN5/L06VK/L06VAK/010VAK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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