Diodes DN350T05 Npn small signal surface mount transistor Datasheet

DN350T05
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available (DP350T05)
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS
Compliant "Green" Device (Notes 2, 3 and 4)
Qualified to AEC-Q101 Standards for High
Reliability
B
B
•
•
•
•
•
•
E
C
D
G
H
K
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin Finish annealed over
Alloy 42 leadframe. Solderable per MIL-STD-202,
Method 208
Marking Information: K3S, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
Maximum Ratings
Dim
A
B
C
D
E
G
H
J
K
L
M
E
TOP VIEW
Mechanical Data
•
•
SOT-23
Min
Max
0.37
0.51
1.20
1.40
2.30
2.50
0.89
1.03
0.45
0.60
1.78
2.05
2.80
3.00
0.013
0.10
0.903
1.10
0.45
0.61
0.085
0.180
0°
8°
α
All Dimensions in mm
A
C
J
M
L
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Value
350
350
5.0
500
300
417
Unit
V
V
V
mA
mW
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product is manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
DS30625 Rev. 8 - 2
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DN350T05
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
350
⎯
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
350
⎯
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
⎯
V
IE = 10μA, IC = 0
Collector Cutoff Current
ICBO
⎯
50
nA
VCB = 250V, IE = 0
Collector Cutoff Current
IEBO
⎯
50
nA
VCE = 5V, IC = 0
hFE
20
30
30
20
15
⎯
⎯
200
200
⎯
⎯
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
IC = 50mA, VCE = 10V
IC = 100mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯
⎯
⎯
0.30
0.35
0.50
1.0
V
IC = 10mA, IB = 1.0mA
IC = 20mA, IB = 2.0mA
IC = 30mA, IB = 3.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
⎯
⎯
0.75
0.80
0.90
V
IC = 10mA, IB = 1.0mA
IC = 20mA, IB = 2.0mA
IC = 30mA, IB = 3.0mA
Base-Emitter On Voltage
VBE(ON)
⎯
2.0
V
IC = 100mA, VCE = 10V
VCB = 20V, f = 1.0MHz, IE = 0
ON CHARACTERISTICS (Note 5)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
7.0
pF
Transition Frequency
fT
50
⎯
MHz
Notes:
VCE = 10V, IC = 20mA
5. Short duration pulse test used to minimize self-heating effect.
300
400
PD, POWER DISSIPATION (mW)
350
250
300
200
250
150
200
150
100
100
50
50
0
1
0
0
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
25
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10
100
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs. Collector Current
DN350T05
© Diodes Incorporated
1
VBE(SAT), BASE EMITTER
SATURATION VOLTAGE (V)
VCE(SAT), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
10
1
0.1
0.1
0.01
20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Fig. 3, Collector-Emitter Saturation Voltage
vs. Collector Current
10
0
10
20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Saturation Voltage
vs. Collector Current
0.9
50
0.8
C, CAPACITANCE (pF)
VBE(ON), BASE EMITTER ON VOLTAGE (V)
60
0.7
0.6
0.5
0.4
0.3
0.2
40
30
20
10
0.1
1
2
3
4
VR, REVERSE VOLTAGE (V)
Fig. 6, Capacitance vs. Reverse Voltage
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Base-Emitter On Voltage vs. Collector Current
Ordering Information
(Note 6)
Packaging
SOT-23
Device
DN350T05-7
Notes:
6.
5
Shipping
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
K3S
Date Code Key
Year
Code
Month
Code
DS30625 Rev. 8 - 2
2005
S
Jan
1
2006
T
Feb
2
Mar
3
YM
Marking Information
K3S = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
2007
U
Apr
4
2008
V
May
5
Jun
6
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2009
W
Jul
7
2010
X
Aug
8
Sep
9
2011
Y
Oct
O
2012
Z
Nov
N
Dec
D
DN350T05
© Diodes Incorporated
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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DN350T05
© Diodes Incorporated
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