Dynex DS1109SG50 Rectifier diode Datasheet

DS1109SG
DS1109SG
Rectifier Diode
Replaces January 2000 version, DS4169-3.0
DS4169-4.0 August 2001
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VRRM 5000V
■ High Surge Capability
IF(AV) 910A
IFSM
APPLICATIONS
11500A
■ Rectification
■ Freewheel Diode
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DS1109SG50
5000
DS1109SG49
4900
DS1109SG48
4800
DS1109SG47
4700
DS1109SG46
4600
DS1109SG45
4500
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
Outline type code: G
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS1109SG49
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DS1109SG
CURRENT RATINGS
Tcase = 75oC unless otherwise stated
Symbol
Parameter
Conditions
Max.
Units
910
A
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
1430
A
Continuous (direct) forward current
-
1314
A
599
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
941
A
Continuous (direct) forward current
-
814
A
Conditions
Max.
Units
710
A
IF
Half wave resistive load
Tcase = 100oC unless otherwise stated
Symbol
Parameter
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
1115
A
Continuous (direct) forward current
-
1000
A
450
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
706
A
Continuous (direct) forward current
-
570
A
IF
Half wave resistive load
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DS1109SG
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
Conditions
Max.
Units
10ms half sine; Tcase = 150oC
9.2
kA
VR = 50% VRRM - 1/4 sine
422 x 103
A2s
10ms half sine; Tcase = 150oC
11.5
kA
VR = 0
660 x 103
A2s
Parameter
Surge (non-repetitive) forward current
I2t for fusing
Surge (non-repetitive) forward current
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
Units
dc
-
0.032
o
Anode dc
-
0.064
o
Cathode dc
-
0.064
o
C/W
Double side
-
0.008
o
C/W
Single side
-
0.016
o
C/W
Forward (conducting)
-
160
o
Reverse (blocking)
-
150
o
Storage temperature range
-55
175
o
Clamping force
11.5
13.5
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 12.0kN
with mounting compound
C
Virtual junction temperature
C
C
kN
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DS1109SG
CHARACTERISTICS
Symbol
Conditions
Parameter
Min.
Max.
Units
VFM
Forward voltage
At 1800A peak, Tcase = 25oC
-
1.8
V
IRM
Peak reverse current
At VRRM, Tcase = 150oC
-
50
mA
QS
Total stored charge
IF = 1000A, dIRR/dt = 3A/µs
-
2600
µC
Irr
Reverse recovery current
Tcase = 150˚C, VR = 100V
-
80
A
Threshold voltage
At Tvj = 150˚C
-
0.88
V
Slope resistance
At Tvj = 150˚C
-
0.687
mΩ
VTO
rT
CURVES
2500
2500
dc
Measured under pulse
conditions
Half wave
2000
Mean power dissipation - (W)
Instantaneous forward current, IF - (A)
2000
Tj = 150˚C
1500
1500
Tj = 25˚C
6 phase
1000
1000
500
500
0
0.5
3 phase
1.0
1.5
2.0
Instantaneous forward voltage, VF - (V)
2.5
0
0
Fig.2 Maximum (limit) forward characteristics
VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF
500
1000
1500
Mean forward current, IF(AV) - (A)
2000
Fig.3 Dissipation curves
Where
A = 0.788646
B = –0.0045
C = 0.000592
D = 0.006984
these values are valid for Tj = 125˚C for IF 500A to 2500A
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DS1109SG
10000
1000
Conditions:
Tj = 150˚C
VR = 100V
IF = 1000A
Stored charge, QS - (µC)
Reverse recovery current, Irr - (A)
Conditions:
Tj = 150˚C
VR = 100V
IF = 1000A
1000
100
IF
QS
dIF/dt
IRM
100
0.1
1.0
10
Rate of decay of on-state current, dIF/dt - (A/µs)
10
0.1
100
Fig.4 Total stored charge
1.0
10
Rate of decay of forward current, dIF/dt - (A/µs)
Fig.5 Maximum reverse recovery current
450
30
0.1
Anode side cooled
2
425
20
400
15
375
350
10
I2t value - (A2s x 103)
Peak half sine forward current - (kA)
25
I2t
325
5
10
ms
1
2 3
5
10
20
300
50
Cycles at 50Hz
Duration
Fig.6 Surge (non-repetitive) forward current vs time (with
50% VRRM at Tcase 150˚C)
Thermal Impedance - junction to case, Rth(j–c) - (˚C/W)
I2t = Î2 x t
0
1
100
Double side cooled
0.01
0.001
0.001
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.01
0.1
Time - (s)
Effective thermal resistance
Junction to case ˚C/W
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
1.0
10
Fig.7 Maximum (limit) transient thermal impedance junction to case
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DS1109SG
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6 x 2.0 deep (in both electrodes)
Cathode
Ø58.5 max
27.0
25.4
Ø34 nom
Ø34 nom
Anode
Nominal weight: 250g
Clamping force: 12kN ±10%
Package outine type code: G
Note:
1. Package maybe supplied with pins and/or tags.
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DS1109SG
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4169-4 Issue No. 4.0 August 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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