dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN layers 0.6 µm Al / 0.5% Cu / 0.8% Si Gate Ox Thickness: Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage DESCRIPTION VEHICLE REV DATE CODE Cf: Ea: β: DS1208 Standard Process 60% 0.7 Passivation: 160 Å Tuse: Vuse: 55 °C 5.5 Volts TEOS Oxide - Nitride 1 CONDITION READPOINT QUANTITY FAILS FILE # DEVICE HRS HIGH TEMPERATURE OPERATING LIFE INFANT LIFE HIGH VOLTAGE LIFE INFANT LIFE HIGH VOLTAGE LIFE INFANT LIFE HIGH VOLTAGE LIFE HIGH VOLTAGE LIFE HIGH VOLTAGE LIFE INFANT LIFE OP-LIFE DS12885 DS12885 DS2401 DS2401 DS2401 DS2401 Wednesday, January 26, 2000 HOURS C1 C1 C1 C1 9804 9804 9804 9804 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 1000 1500 C1 C1 C1 C1 9807 9807 9807 9807 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 1000 1500 C1 C1 C1 9752 9752 9752 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 528 C2 C2 C2 9808 9808 9808 125C, 6.0 VOLTS 150C, 6.0 VOLTS 150C, 6.0 VOLTS 48 48 336 C2 C2 C2 9832 9832 9832 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 1000 HOURS C2 C2 9835 9835 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS 429 153 153 153 0 0 0 0 2646132 6606079 13054870 9830474 429 153 153 153 0 0 0 0 2646132 6606079 13054870 9830474 399 200 200 0 0 0 2461088 8635397 4934513 200 419 419 0 0 0 1233628 8634985 51809909 195 195 194 0 0 1 22411 1202787 7216725 16553234 370 80 0 0 2282212 3454159 dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN layers 0.6 µm Al / 0.5% Cu / 0.8% Si Gate Ox Thickness: Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage Cf: Ea: β: DS1208 Standard Process 60% 0.7 Passivation: 160 Å Tuse: Vuse: 55 °C 5.5 Volts 1 DESCRIPTION VEHICLE REV DATE CODE CONDITION READPOINT OP-LIFE DS2401 C2 9835 125C, 6.0 VOLTS 1000 INFANT LIFE OP-LIFE DS2401 C2 C2 C2 C2 9841 9841 9841 9841 125C, 7.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 1000 2000 C2 C2 C2 C2 9842 9842 9842 9842 125C, 7.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 1000 2000 C2 C2 C2 9851 9851 9851 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 1000 C2 C2 C2 C2 C2 C2 9853 9853 9853 9853 9853 9853 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 1000 48 336 1000 HOURS C2 C2 9902 9902 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 HOURS INFANT LIFE OP-LIFE INFANT LIFE HIGH VOLTAGE LIFE OP-LIFE HIGH VOLTAGE LIFE DS2401 DS2401 DS2401 DS2401 Wednesday, January 26, 2000 TEOS Oxide / Nitride QUANTITY FAILS FILE # DEVICE HRS HOURS 80 0 6826076 HOURS 195 115 115 110 0 0 0 0 3269515 4965353 9812484 14135323 195 115 115 115 0 0 0 0 3269515 4965353 9812484 14777837 234 77 77 0 0 0 1443345 3324628 6570098 80 80 80 75 75 75 0 0 0 1 22990 0 0 493451 2960708 6826076 462611 2775663 6399446 114 113 0 0 703168 4181999 HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN layers 0.6 µm Al / 0.5% Cu / 0.8% Si Gate Ox Thickness: Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage DESCRIPTION HIGH VOLTAGE LIFE Cf: Ea: β: DS1208 Standard Process 60% 0.7 Passivation: 160 Å Tuse: Vuse: 55 °C 5.5 Volts TEOS Oxide / Nitride 1 VEHICLE REV DATE CODE CONDITION READPOINT DS2401 C2 C2 C2 C2 C2 C2 C2 C2 C2 9902 9902 9902 9902 9902 9902 9902 9902 9902 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 1000 48 336 1000 48 336 1000 48 48 HOURS QUANTITY FAILS FILE # DEVICE HRS HOURS 113 116 116 116 116 115 115 116 116 0 0 0 0 0 0 0 0 0 9641832 715504 4293026 9897810 715504 4256017 9812484 715504 715504 HOURS HOURS HOURS HOURS HOURS HOURS HOURS INFANT LIFE DS2401 C2 9921 125C, 6.0 VOLTS 48 HOURS 97 0 598310 INFANT LIFE HIGH VOLTAGE LIFE DS2401 C2 C2 C2 9926 9926 9926 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 1000 HOURS HOURS 234 77 77 0 0 0 1443345 3324628 6570098 C2 C2 C2 C2 9928 9928 9928 9928 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 168 48 168 550 01/08/2000 571 01/14/2000 0 3392477 0 3522008 C2 C2 9943 9943 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 HOURS 250 77 0 0 1542035 3324628 B1 9822 125C, 6.0 VOLTS 48 HOURS 253 0 1560540 HIGH VOLTAGE LIFE DS2401 INFANT LIFE HIGH VOLTAGE LIFE DS2401 HIGH VOLTAGE LIFE DS2405 Wednesday, January 26, 2000 HOURS HOURS HOURS HOURS HOURS HOURS dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN layers 0.6 µm Al / 0.5% Cu / 0.8% Si Gate Ox Thickness: Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage DESCRIPTION HIGH VOLTAGE LIFE INFANT LIFE HIGH VOLTAGE LIFE INFANT LIFE HIGH VOLTAGE LIFE OP-LIFE Cf: Ea: β: DS1208 Standard Process 60% 0.7 Passivation: 160 Å Tuse: Vuse: 55 °C 5.5 Volts 1 VEHICLE REV DATE CODE CONDITION READPOINT DS2405 B1 B1 9822 9822 125C, 6.0 VOLTS 125C, 6.0 VOLTS 336 1000 A1 A1 A1 9740 9740 9740 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 1000 A1 A1 A1 A1 9749 9749 9749 9749 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 48 336 1000 1500 A1 9917 125C, 6.0 VOLTS 48 DS2409 DS2409 DS2415 DEVICE HRS: Wednesday, January 26, 2000 TEOS Oxide / Nitride HOURS QUANTITY FAILS FILE # DEVICE HRS 253 253 0 0 9363238 21587465 769 116 116 0 0 0 4743300 5008530 9897810 HOURS 766 116 116 116 0 0 0 0 4724796 5008530 9897810 7453170 HOURS 192 0 1184283 HOURS HOURS HOURS HOURS HOURS HOURS HOURS TOTALS: FAILURE RATE (Fits): 4.26E+08 2 7 dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN layers 0.6 µm Al / 0.5% Cu / 0.8% Si Gate Ox Thickness: Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage DESCRIPTION VEHICLE Standard Process Cf: Ea: β: REV DATE CODE DS1208 60% 0.7 Passivation: 160 Å Tuse: Vuse: 55 °C 5.5 Volts 1 CONDITION READPOINT File # FAILURE MODE FAILURE MECHANISM CORRECTIVE ACTION 22411 PREFUNCTIONAL SUSPECT GATE OXIDE IN PROCESS 22990 PREFUNCTIONAL SUSPECT GATE OXIDE Wednesday, January 26, 2000 TEOS Oxide / Nitride IN PROCESS DEVICE REV DIE SIZE (x) DIE SIZE (y) No. of Transistors DS12885 C1 99 122 16100 DS2401 C1 54 28 2371 DS2401 C2 54 28 2371 DS2405 DS2409 B1 A1 53 76 34 75 0 3600 DS2415 A1 56 45 4830 QUANTITY FAILS FILE # DEVICE HRS