IXYS DS17-08A Rectifier diode avalanche diode Datasheet

DS 17
DSA 17
VRRM = 800-1800 V
IF(RMS) = 40 A
IF(AV)M = 25 A
Rectifier Diode
Avalanche Diode
VRSM
V(BR)minÿ① VRRM
Anode
DO-203 AA
Cathode
V
V
V
900
1300
-
800
1200
DS 17-08A
DS 17-12A
DSI 17-08A
DSI 17-12A
1300
1700
1900
1300
1750
1950
1200
1600
1800
DSA 17-12A
DSA 17-16A
DSA 17-18A
DSAI 17-12A
DSAI 17-16A
DSAI 17-18A
on stud
on stud
C
A
Symbol
Test Conditions
IF(RMS)
IF(AV)M
TVJ = TVJM
Tcase = 125°C; 180° sine
PRSM
DSA(I) types, TVJ = TVJM, tp = 10 ms
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
370
400
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
300
320
A
A
680
660
2
As
A2s
450
430
2
As
A2s
-40...+180
180
-40...+180
°C
°C
°C
TVJ = 45°C
VR = 0
TVJ = TVJM
VR = 0
C
DSI
DSAI
10-32UNF
A = Anode
It
A
DS
DSA
① Only for Avalanche Diodes
2
DSI 17
DSAI 17
C = Cathode
Maximum Ratings
A
A
7
kW
Features
International standard package,
JEDEC DO-203 AA (DO-4)
Planar glassivated chips
●
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ
TVJM
Tstg
40
25
●
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
●
●
●
●
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
●
●
●
●
Md
Mounting torque
2.2-2.8
19-25
6
Weight
Nm
lb.in.
g
Symbol
Test Conditions
IR
TVJ = TVJM; VR = VRRM
£
4
VF
IF
£
1.36
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.85
8
V
mW
RthJC
RthJH
DC current
DC current
1.5
2.1
K/W
K/W
dS
dA
a
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
2.05
2.05
100
mm
mm
m/s2
= 55 A; TVJ = 25°C
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
mA
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-2
DS 17
DSA 17
400
100
typ.
lim.
A
A
1000
50Hz, 80% VRRM
600
TVJ = 45°C
300
I2t
IFSM
TVJ= 180°C
TVJ= 25°C
60
VR = 0 V
800
A2s
80
IF
DSI 17
DSAI 17
TVJ = 45°C
400
200
TVJ = 180°C
40
TVJ = 180°C
200
100
20
0
V 1.8
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF
Fig. 1 Forward characteristics
100
0
10-3
10-2
10-1
t
s
100
1
2
3
4
5 6 7 ms
8 910
t
Fig. 3 I2t versus time (1-10 ms)
Fig. 2 Surge overload current
IFSM: crest value, t: duration
40
50
RthJA :
W
A
2.8 K/W
40
3.2 K/W
PF
30
IF(AV)M
4,8 K/W
6.3 K/W
30
8.5 K/W
Cu 80x80
20
20
DC
180° sin
120°
60°
30°
10
10
0
0
0
10
20
30
40 A
50
00
50
IF(AV)M
150 °C 200
100
0
50
100
Tamb
Fig. 4 Power dissipation versus forward current and ambient temperature
150 °C
Tcase
Fig. 5 Max. forward current at case
temperature 180° sine
RthJH for various conduction angles d:
K/W
ZthJH
2
d
RthJH (K/W)
DC
180°
120°
60°
30°
2.10
2.23
2.33
2.53
2.72
Constants for ZthJH calculation:
1
i
0
10-3
10-2
10-1
100
s
101
102
1
2
3
4
Rthi (K/W)
ti (s)
0.1006
0.5311
0.8683
0.600
0.0021
0.0881
2.968
3.20
t
Fig. 6 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
2-2
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