Dynex DS2102SY19 Rectifier diode Datasheet

DS2102SY
DS2102SY
Rectifier Diode
Replaces September 2001 version, DS4171-5.0
DS4171-5.1 December 2001
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VRRM 2000V
■ High Surge Capability
IF(AV) 6654A
IFSM
APPLICATIONS
100000A
■ Rectification
■ Freewheel Diode
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DS2102SY20
2000
DS2102SY19
1900
DS2102SY18
1800
DS2102SY17
1700
DS2102SY16
1600
DS2102SY15
1500
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2102SY18
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DS2102SY
CURRENT RATINGS
Tcase = 75oC unless otherwise stated
Symbol
Parameter
Conditions
Max.
Units
6654
A
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
10452
A
Continuous (direct) forward current
-
9275
A
4227
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
6640
A
Continuous (direct) forward current
-
5403
A
Conditions
Max.
Units
IF
Half wave resistive load
Tcase = 100oC unless otherwise stated
Symbol
Parameter
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 100oC
5460
A
IF(RMS)
RMS value
Tcase = 100oC
8575
A
Continuous (direct) forward current
Tcase = 100oC
7450
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 100oC
3410
A
IF(RMS)
RMS value
Tcase = 100oC
5356
A
Continuous (direct) forward current
Tcase = 100oC
4260
A
IF
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DS2102SY
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
Parameter
Surge (non-repetitive) forward current
I2t for fusing
Surge (non-repetitive) forward current
Conditions
Max.
Units
10ms half sine; Tcase = 175oC
80.0
kA
VR = 50% VRRM - 1/4 sine
32 x 106
A2s
10ms half sine; Tcase =175oC
100.0
kA
VR = 0
50 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
dc
-
0.0095
o
Anode dc
-
0.019
o
Cathode dc
-
0.019
o
C/W
Double side
-
0.002
o
C/W
Single side
-
0.004
o
C/W
Forward (conducting)
-
200
o
Reverse (blocking)
-
175
o
Storage temperature range
-55
175
o
Clamping force
38.0
47.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Units
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 43.0kN
with mounting compound
C
Virtual junction temperature
C
C
kN
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DS2102SY
CHARACTERISTICS
Conditions
Parameter
Symbol
Min.
Max.
Units
VFM
Forward voltage
At 3000A peak, Tcase = 25oC
-
1.0
V
IRM
Peak reverse current
At VRRM, Tcase = 175oC
-
100
mA
QS
Total stored charge
-
2600
µC
Irr
Peak reverse recovery current
-
120
A
VTO
rT
IF = 2000A, dIRR/dt = 3A/µs
Tcase = 175˚C, VR = 100V
Threshold voltage
At Tvj = 175˚C
-
0.75
V
Slope resistance
At Tvj = 175˚C
-
0.0415
mΩ
CURVES
10000
12000
Measured under pulse conditions
10000
Mean power dissipation - (W)
Instantaneous forward current, IF - (A)
8000
6000
Tj = 175˚C
4000
8000
6000
4000
Tj = 25˚C
2000
2000
0
0.4
0.6
0.8
1.0
Instantaneous forward voltage, VF - (V)
1.2
0
0
Fig.2 Maximum (limit) forward characteristics
VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF
dc
Half wave
3 phase
6 phase
2000
4000
6000
8000
Mean forward current, IF(AV) - (A)
10000
Fig.3 Dissipation curves
Where
A = 0.402091
B = 0.011718
C = 6.48 x 10–5
D = 0.005977
these values are valid for Tj = 125˚C for IF 500A to 10000A
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DS2102SY
100000
1000
IF
Conditions:
Tj = 175˚C
VR = 100V
IF = 2000A
QS
Conditions:
Tj = 175˚C
VR = 100V
IF = 2000A
dIF/dt
Stored charge, QS - (µC)
Reverse recovery current Irr - (A)
IRM
10000
1000
0.1
100
1.0
10
Rate of decay of forward current, dIF/dt - (A/µs)
10
0.1
100
Fig.4 Total stored charge
1.0
10
Rate of decay of forward current, dIF/dt - (A/µs)
100
Fig.5 Maximum reverse recovery current
160
0.1
I2t = Î2 x t
2
120
35
100
30
80
25
I2t
60
Thermal impedance - (˚C/W)
Anode side cooled
I2t value - (A2s x 106)
Peak half sine forward current - (kA)
140
0.01
Double side cooled
0.001
20
40
1
10
ms
1
2 3
5
10
20
15
50
Cycles at 50Hz
Duration
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% VRRM at Tcase 175˚C)
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.0001
0.001
0.01
0.1
1
Time - (s)
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0095
0.0105
0.0112
0.0139
10
Single side
0.019
0.020
0.0207
0.0234
100
Fig.7 Maximum (limit) transient thermal impedance junction to case
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DS2102SY
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6 x 2.0 deep (One in each electrode)
Cathode
37.7
36.0
Ø112.5 max
Ø73 nom
Ø73 nom
Anode
Nominal weight: 1600g
Clamping force: 50kN ±10%
Package outine type code: Y
Note:
1. Package maybe supplied with pins and/or tags.
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DS2102SY
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4171-5 Issue No. 5.1 December 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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