DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 30/35 ns with soft recovery VRSM VRRM V V 600 600 600 600 600 600 Type A C DSEP 30-06A DSEP 30-06B DSEP 30-06BR TO-247 AD ISOPLUS 247TM Version A Version BR C C A A C (TAB) Isolated back surface A = Anode, C = Cathode Symbol IFRMS IFAVM Conditions Maximum Ratings rect., d = 0.5; TC (Vers. A) = 135°C TC (Vers. B) = 125°C; TC (Vers. BR) = 115°C 70 30 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 250 A EAS TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH 0.2 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A -55...+175 175 -55...+150 °C °C °C 165 135 W W TVJ TVJM Tstg Ptot TC = 25°C (Vers. BR) Md* FC mounting torque mounting force with clip VISOL ** 50/60 Hz, RMS, t = 1 minute, leads-to-tab Weight typical 0.8...1.2 20...120 Nm N 2500 V~ 6 g * Verson A only; ** Version BR only Symbol ① Conditions Characteristic max. Values Vers. A Vers. B TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 250 1 250 2 µA mA VF ② IF = 30 A; 1.25 1.60 1.56 2.51 V V RthJC RthJC RthCH 0.9 Version BR typ. 0.25 0.9 1.1 0.25 K/W K/W K/W 35 30 ns 6 4 A IR trr IRM typ. typ. TVJ = 150°C TVJ = 25°C IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C Features • • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Version ..R isolated and UL registered E153432 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 417 Data according to IEC 60747 and per diode unless otherwise specified. 1-3 DSEP 30-06A 70 A 60 3000 50 T = 100°C nC VVJ= 300V R 2500 IRM Qr IF 50 TVJ=150°C 2000 TVJ=100°C 1500 IF= 60A IF= 30A IF= 15A 40 30 TVJ= 100°C VR = 300V A 40 IF= 60A IF= 30A IF= 15A 30 20 1000 20 TVJ=25°C 0 0.0 0.5 1.0 1.5 VF 10 500 10 0 100 V2.0 Fig. 1 Forward current IF versus VF 0 A/µs 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 130 120 600 A/µs 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 1.2 µs VFR tfr 0.9 IF= 60A IF= 30A IF= 15A 110 1.0 400 V VFR tfr 15 trr Kf 200 20 TVJ= 100°C VR = 300V ns 1.5 0 100 10 0.6 5 0.3 IRM 90 0.5 Qr 80 0.0 TVJ= 100°C IF = 30A 70 0 40 80 120 °C 160 0 0 TVJ 200 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0396 0.01 0.001 0.00001 DSEP30-06A DSEC60-06A 0.0001 0.001 0.01 s 0.1 NOTE: Fig. 2 to Fig. 6 shows typical values 1 t IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 417 Fig. 7 Transient thermal resistance junction to case 2-3 DSEP 30-06BR DSEP 30-06B 100 300 A nC TVJ = 150°C IF A VR = 300 V 250 80 12 TVJ = 100°C Qr IRM IF = 60 A 200 IF = 30 A IF = 15 A 8 IF = 30 A 60 IF = 60 A 10 IF = 15 A TVJ = 100°C 150 6 100 4 40 TVJ = 100°C VR = 300 V 20 50 TVJ = 25°C 0 0 1 3 V 2 2 0 100 4 0 A/µs 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 140 120 600 A/µs 800 1000 -diF/dt 0.30 µs 0.25 tfr IF = 30 A 50 VFR trr Kf 400 TVJ = 100°C V VR = 300 V 200 Fig. 3 Peak reverse current IRM versus -diF/dt 60 TVJ = 100°C ns 1.5 0 IF = 60 A 100 40 0.20 30 0.15 IF = 30 A 1.0 IF = 15 A 80 IRM 20 60 0.5 tfr VFR 10 Qr 0.10 0.05 40 0.0 0 0 40 80 120 C 160 0 200 TVJ 400 600 800 1000 A/µs 0 200 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 0.00 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation ..B: K/W i DSEP 30-06BR 1 1 2 3 DSEP 30-06B ZthJC 0.1 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0397 Constants for ZthJC calculation ..BR: i 1 2 3 4 0.01 0.001 0.00001 400 0.0001 0.001 0.01 s 0.1 Rthi (K/W) ti (s) 0.368 0.1417 0.0295 0.5604 0.0052 0.0003 0.0004 0.0092 1 t IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved NOTE: Fig. 2 to Fig. 6 shows typical values 417 Fig. 7 Transient thermal resistance junction to case 3-3