IXYS DSEP8-06A Hiperfred epitaxial diode with soft recovery Datasheet

DSEP 8-06A
HiPerFREDTM Epitaxial Diode
IFAV = 10 A
VRRM = 600 V
trr
= 35 ns
with soft recovery
VRSM
VRRM
V
V
600
600
Type
A
C
TO-220 AC
C
DSEP 8-06A
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
TC = 135°C; rectangular, d = 0.5
35
10
A
A
Features
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
50
A
EAS
TVJ = 25°C; non-repetitive
IAS = 0.9 A; L = 180 µH
0.1
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.1
A
-55...+175
175
-55...+150
°C
°C
°C
60
W
●
●
●
●
●
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
mounting torque
Weight
typical
0.4...0.6
2
Nm
g
●
●
Applications
●
●
●
Symbol
IR
①
VF ②
Conditions
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
60
0.25
mA
mA
IF = 10 A;
1.42
2.10
V
V
2.5
0.5
K/W
K/W
35
ns
TVJ = 150°C
TVJ = 25°C
RthJC
RthCH
trr
IRM
IF = 1 A; -di/dt = 50 A/ms;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 12 A; -diF/dt = 100 A/ms
TVJ = 100°C
●
●
●
●
●
A
●
●
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
●
4.4
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
008
Data according to IEC 60747 and per diode unless otherwise specified
1-2
DSEP 8-06A
30
1.4
T = 100°C
nC VJ
V = 300V
1.2 R
A
25
IF
TVJ=150°C
TVJ=100°C
TVJ= 25°C
20
15
Qr
40
TVJ= 100°C
A VR = 300V
1.0
IRM
IF= 20A
IF= 10A
IF= 5A
0.8
30
IF= 20A
IF= 10A
IF= 5A
20
0.6
10
0.4
5
10
0.2
0
0.0
0.5
1.0
0.0
100
2.0 V 2.5
1.5
A/ms 1000
-diF/dt
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
120
2.0
trr
1.5
1.0
90
I RM
80
0.5
0.9
10
0.6
5
0.3
TVJ= 100°C
IF = 10A
0.0
80
120 °C 160
0
TVJ
200
400
800
A/
ms 1000
600
0
0
200
400
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
µs
V FR
tfr
70
40
ms 1000
600 A/
800
-diF/dt
1.2
Qr
0
400
tfr
IF= 20A
IF= 10A
IF= 5A
100
200
Fig. 3 Peak reverse current IRM
versus -diF/dt
V
VFR
15
110
Kf
0
20
TVJ= 100°C
VR = 300V
ns
0
Fig. 5 Recovery time trr versus -diF/dt
10
K/W
0.0
ms 1000
600 A/
800
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
1
1
2
3
ZthJC
Rthi (K/W)
ti (s)
1.449
0.5578
0.4931
0.0052
0.0003
0.0169
0.1
0.01
0.001
0.00001
DSEP 8-06A/DSEC16-06A
0.0001
0.001
0.01
s
0.1
1
t
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
914
Fig. 7 Transient thermal resistance junction to case
2-2
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