DSF8045SK DSF8045SK Fast Recovery Diode Advance Information Replaces January 2000 version, DS4150-6.0 DS4146-7.0 June 2004 KEY PARAMETERS VRRM 4500V IF(AV) 430A IFSM 3500A Qr 440µC trr 3.07µs APPLICATIONS ■ Snubber Diode For GTO Applications FEATURES ■ Double side cooling ■ High surge capability ■ Low recovery charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DSF8045SK45 4500 DSF8045SK44 4400 DSF8045SK43 4300 DSF8045SK42 4200 DSF8045SK41 4100 DSF8045SK40 4000 Lower voltage grades available. Conditions VRSM = VRRM + 100V Outline type code: K. See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DSF8045SK43 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DSF8045SK CURRENT RATINGS Symbol Parameter Conditions Max. Units Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 430 A IF(RMS) RMS value Tcase = 65oC 680 A Continuous (direct) forward current Tcase = 65oC 600 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 285 A IF(RMS) RMS value Tcase = 65oC 445 A Continuous (direct) forward current Tcase = 65oC 380 A IF SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Conditions Max. Units 3.5 kA 61.25 x 103 A2s 2.8 kA 39.2 x 103 A2s Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing THERMAL AND MECHANICAL DATA Parameter Symbol Double side cooled Rth(j-c) Min. Max. Units dc - 0.048 o Anode dc - 0.09 o Cathode dc - 0.103 o Double side - 0.01 o Single side - 0.02 o - 150 o o Conditions Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Thermal resistance - case to heatsink Clamping force 8.0kN with mounting compound Tvj Virtual junction temperature Tstg Storage temperature range -55 175 Clamping force 7.0 9.0 - Forward (conducting) C/W C/W C/W C C kN 2/7 www.dynexsemi.com DSF8045SK CHARACTERISTICS Symbol Conditions Parameter Typ. Max. Units VFM Forward voltage At 1000A peak, Tcase = 25oC - 4.0 V IRRM Peak reverse current At VRRM, Tcase = 150oC - 50 mA - 3.07 µs trr Reverse recovery time Recovered charge (50% chord) IF = 1000A, diRR/dt = 100A/µs - 440 µC IRM Reverse recovery current Tcase = 150oC, VR = 100V - 240 A K Soft factor - - - QRA1 VTO Threshold voltage At Tvj = 150oC - 1.7 V rT Slope resistance At Tvj = 150oC - 2.1 mΩ Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 300 V VFRM DEFINITION OF K FACTOR AND QRA1 QRA1 = 0.5x IRR(t1 + t2) dIR/dt t1 t2 k = t1/t2 τ 0.5x IRR IRR 3/7 www.dynexsemi.com DSF8045SK CURVES 2000 500 Measured under pulse conditions Measured under pulse conditions Instantaneous forward current IF - (A) Instantaneous forward current IF - (A) 400 Tj = 25˚C 1500 Tj = 150˚C 1000 Tj = 150˚C 300 200 Tj = 25˚C 100 500 2.0 3.0 4.0 5.0 Instantaneous forward voltage VF - (V) 0 1.5 6.0 Fig.2 Maximum (limit) forward characteristics 10000 Current waveform VFR IF 50µs QS = QS di = δy dt δx Reverse recovered charge Qrr - (µC) δy Conditions: Tj = 150˚C, VR = 100V 0 Voltage waveform 500 Transient forward votage VFP - (V) 3.5 Fig.3 Maximum (limit) forward characteristics 600 400 2.0 2.5 3.0 Instantaneous forward voltage VF - (V) δx Tj = 125˚C limit 300 Tj = 25˚C limit 200 tp = 1ms dIR/dt IRR 1000 IF = 2000A IF = 1000A 100 0 0 500 1000 1500 Rate of rise of forward current dIF/dt - (A/µs) Fig.4 Transient forward voltage vs rate of rise of forward current 2000 100 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.5 Recovered charge 4/7 www.dynexsemi.com DSF8045SK 1000 0.1 Single side cooled Thermal impedance - junction to case, Zth(j-c) - (˚C/W) Conditions: Tj = 150˚C, VR = 100V IF = 2000A Reverse recovery current Irr - (A) IF = 1000A 100 10 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.6 Typical reverse recovery current vs rate of rise of forward current Double side cooled 0.01 0.001 0.001 0.01 0.1 Time - (s) 1 10 Fig.7 Maximum (limit) transient thermal impedance junction to case - (˚C/W) 5/7 www.dynexsemi.com DSF8045SK PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 Holes Ø3.6 x 2.0 deep (One in each electrode) Cathode Ø42 max 27.0 25.4 Ø25 nom Ø25 nom Anode Nominal weight: 160g Clamping force: 8kN ±10% Package outline type code: K 6/7 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com