Z ibo Seno Electronic Engineering Co., Ltd. DSR1A – DSR1M 1.0A SURFACE MOUNT GLASS PASSIVATED DIODE Mechanical Data ! ! ! ! ! ! 0.10-0.30 1.4± 0.15 1.9± 0.1 ! Glass passivated device ! Ideally Suited for Automatic Assembly SOD - 123FL ! Low Forward Voltage Drop, High Efficiency ! Surge Overload Rating to 2 5 A Peak Cathode Band Top View ! Low Power Loss ! Ultra-Fast Recovery Time ! Plastic Case Material has UL Flammability ! Classification Rating 94V-O 2.8 ± 0.1 1.0±0.2 Features 0.6±0.25 Case: SOD-123FL, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.01 grams (approx.) Lead Free: For RoHS / Lead Free Version, 3.7±0.2 Dimensions in millimeters Maximum Ratings and Electrical Characteristics Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 100°C DSR1A DSR1B DSR1D DSR1G DSR1J DSR1K DSR1M UNITS VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 800 V IO 1.0 A IFSM 25 A @IF = 1.0A VFM 1.3 V @TA = 25°C @TA = 100°C IRM 10 500 µA Cj 15 pF RJL 30 °C/W Tj, TSTG -65 to +150 °C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @TA=25°C unless otherwise specified Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. DSR1A – DSR1M 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. DSR1A – DSR1M 1.0 10 IF, INSTANTANEOUS FWD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0 25 50 75 100 125 150 175 1.0 0.1 Tj = 25°C Pulse width = 300 µs 0.01 200 30 1.2 1.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 100 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC Method) Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve 20 10 Tj = 25°C f = 1MHz 10 1 0 1 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current 100 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 trr 50Ω NI (Non-inductive) (-) 10Ω NI Device Under Test (+) +0.5A (-) 0A Pulse Generator (Note 2) 50V DC Approx 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit DSR1A – DSR1M 2 of 2 www.senocn.com Alldatasheet