ON DTB113E Pnp silicon bias resistor transistor Datasheet

DTA114E SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
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PNP SILICON
BIAS RESISTOR
TRANSISTOR
COLLECTOR
3
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation
@ TA = 25°C (1.)
Derate above 25°C
PD
350
2.81
mW
mW/°C
Rating
2
BASE
1
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ambient (surface mounted)
Operating and Storage
Temperature Range
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
Symbol
Value
Unit
RθJA
357
°C/W
TJ, Tstg
–55 to
+150
°C
260
10
°C
Sec
TL
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
10
22
47
47
∞
∞
1.0
2.2
4.7
47
5000/Box
1
2
3
CASE 29
TO–92 (TO–226)
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
 Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTA114E/D
DTA114E SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
—
—
100
nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
—
—
500
nAdc
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
—
—
Vdc
Collector–Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
—
—
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
60
100
140
140
250
250
5.0
15
27
140
—
—
—
—
—
—
—
—
—
—
VCE(sat)
—
—
0.25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Characteristic
OFF CHARACTERISTICS
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
ON CHARACTERISTICS (2.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
Collector–Emitter Saturation Voltage
(IC = 10 mA, IE = 0.3 mA) DTA144E/DTA114Y
(IC = 10 mA, IE = 0.3 mA) DTB113E/DTA143E
(IC = 10 mA, IB = 5 mA) DTA123E
(IC = 10 mA, IB = 1 mA) DTA114T/DTA143T/
(IC = 10 mA, IB = 1 mA) DTA143Z/DTA124E
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
VOL
DTA114E
DTA124E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA144E
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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2
Vdc
Vdc
DTA114E SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
Input Resistor
Resistor Ratio
Symbol
Min
Typ
Max
Unit
VOH
4.9
—
—
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
kΩ
R1/R2
0.8
0.17
—
0.8
0.055
1.0
0.21
—
1.0
0.1
1.2
0.25
—
1.2
0.185
DTA114T
DTA113T
DTA144E
DTA114Y
DTA143Z
DTB113E
DTA114T
DTA143T
DTA123E
DTA143E
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA114E/DTA124E/DTA144E
DTA114Y
DTA114T/DTA143T
DTB113E/DTA123E/DTA143E
DTA143Z
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3
DTA114E SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
DTA114E
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
RθJA = 625°C/W
50
0
–50
0
50
100
150
1
IC/IB = 10
TA = –25°C
75°C
0.1
0.01
20
0
Figure 1. Derating Curve
80
4
VCE = 10 V
Cob , CAPACITANCE (pF)
h FE, DC CURRENT GAIN (NORMALIZED)
60
Figure 2. VCE(sat) versus IC
1000
TA = 75°C
25°C
–25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
3
2
1
0
100
f = 1 MHz
lE = 0 V
TA = 25°C
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain
100
75°C
100
25°C
VO = 0.2 V
TA = –25°C
10
1
0.1
0.01
0.001
50
Figure 4. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
IC , COLLECTOR CURRENT (mA)
40
IC, COLLECTOR CURRENT (mA)
TA, AMBIENT TEMPERATURE (°C)
10
25°C
TA = –25°C
10
25°C
75°C
1
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
0.1
10
Figure 5. Output Current versus Input Voltage
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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4
50
DTA114E SERIES
1000
10
h FE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
DTA124E
IC/IB = 10
TA = –25°C
25°C
1
75°C
0.1
0.01
VCE = 10 V
TA = 75°C
25°C
–25°C
100
10
0
20
60
40
IC, COLLECTOR CURRENT (mA)
1
80
10
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
100
IC , COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
TA = –25°C
1
0.1
VO = 5 V
0.01
0.001
50
75°C
10
0
1
2
3
4
VO = 0.2 V
TA = –25°C
25°C
10
75°C
1
0
10
6
7
8
9
Figure 10. Output Current versus Input Voltage
100
0.1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
IC, COLLECTOR CURRENT (mA)
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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5
50
10
DTA114E SERIES
1
1000
IC/IB = 10
TA = –25°C
h FE , CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
DTA144E
25°C
75°C
0.1
0.01
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA = 75°C
25°C
–25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
0.6
0.4
0.2
TA = 75°C
25°C
–25°C
10
1
0.1
0.01
VO = 5 V
0
0
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
1
2
3
4
VO = 2 V
TA = –25°C
25°C
75°C
1
0.1
0
10
6
7
8
9
10
Figure 15. Output Current versus Input Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Vin , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
I C , COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 16. Input Voltage versus Output Current
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DTA114E SERIES
180
1
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
DTA114Y
TA = –25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
–25°C
120
100
80
60
40
20
0
80
TA = 75°C
VCE = 10 V
160
2
1
4
6
Figure 17. VCE(sat) versus IC
90 100
100
4
TA = 75°C
f = 1 MHz
lE = 0 V
TA = 25°C
3.5
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
80
Figure 18. DC Current Gain
4.5
3
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
–25°C
10
VO = 5 V
1
50
Figure 19. Output Capacitance
25°C
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 20. Output Current versus Input Voltage
+12 V
10
VO = 0.2 V
TA = –25°C
V in , INPUT VOLTAGE (VOLTS)
25°C
Typical Application
for PNP BRTs
75°C
1
LOAD
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
Figure 22. Inexpensive, Unregulated Current Source
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7
DTA114E SERIES
PACKAGE DIMENSIONS
A
TO–92
(TO–226)
CASE 29–11
ISSUE AL
B
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 6:
PIN 1. GATE
2. SOURCE & SUBSTRATE
3. DRAIN
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 8:
PIN 1. DRAIN
2. GATE
3. SOURCE & SUBSTRATE
STYLE 9:
PIN 1. BASE 1
2. EMITTER
3. BASE 2
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 11:
PIN 1. ANODE
2. CATHODE & ANODE
3. CATHODE
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. GATE
3. MAIN TERMINAL 2
STYLE 13:
PIN 1. ANODE 1
2. GATE
3. CATHODE 2
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
STYLE 15:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
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DTA114E/D
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