Rohm DTB713ZE -200ma / -30v low vce (sat) digital transistors (with built-in resistors) Datasheet

-200mA / -30V Low VCE (sat) Digital transistors
(with built-in resistors)
DTB713ZE / DTB713ZM
zDimensions (Unit : mm)
zApplications
Inverter, Interface, Driver
DTB713ZE
0.7
1.6
0.55
0.3
zFeature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors
(see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
(2)
1.6
0.8
(3)
0.2
0.15
0.5 0.5
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.1Min.
(1)
0.2
1.0
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : P11
1.2
0.32
0.2
DTB713ZM
0.8
1.2
(3)
0.22
(1)(2)
0.4 0.4
0.2
zStructure
PNP epitaxial plannar silicon transistor
(Resistor built-in type)
0.13
0.5
0.8
(1) IN
(2) GND
(3) OUT
VMT3
Each lead has same dimensions
Abbreviated symbol : P11
zPackaging specifications
Package
EMT3
VMT3
Packaging type
Taping
Taping
TL
T2L
3000
8000
Code
Part No.
Basic ordering
unit (pieces)
−
DTB713ZE
−
DTB713ZM
zAbsolute maximum ratings (Ta=25°C)
Symbol
Parameter
zInner circuit
Limits
DTB713ZE DTB713ZM
Unit
VCC
−30
V
Input voltage
VIN
−10 to +5
V
Collector current
∗1
IC (max)
−200
mA
Power dissipation
∗2
PD
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
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IN
R2
GND(+)
OUT
IN
GND(+)
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
c 2009 ROHM Co., Ltd. All rights reserved.
○
OUT
R1
Supply voltage
R1=1.0kΩ / R2=10kΩ
1/2
2009.05 - Rev.B
DTB713ZE / DTB713ZM
Data Sheet
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
VI(off)
−
−
−0.3
VI(on)
−2.5
−
−
VO(on)
−
−70
−300
mV
IO/II= −50mA / −2.5mA
II
−
−
−6.4
mA
VI= −5V
IO(off)
−
−
−0.5
µA
GI
140
−
−
−
Input voltage
Output voltage
Input current
Output current
DC current gain
Unit
Conditions
VCC= −5V, IO= −100µA
V
VO= −0.3V, IO= −20mA
VCC= −30V, VI=0V
VO= −2V, IO= −100mA
Transition frequency ∗
fT
−
260
−
MHz
Input resistance
R1
0.7
1.0
1.3
kΩ
−
Resistance ratio
R2/R1
8.0
10
12
−
−
VCE= −10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor.
zElectrical characteristics curves
Ta= -40℃
10
25℃
85℃
125℃
1
0.1
0.1
100
V0= -0.3V
OUTPUT CURRENT : I O (mA)
INPUT VOLTAGE : V I (on) (V)
100
VCC = -5V
10
Ta=125℃
85℃
1
25℃
-40℃
0.1
1
10
100
0
1000
0.5
DC CURENT GAIN : G I
Ta=125℃
85℃
100
25℃
-40℃
10
1
0.1
1
VO= -2V
OUTPUT VOLTAGE : VO(on) (V)
1000
1
1.5
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (mA)
IC /II=20
Ta=125℃
85℃
25℃
-40℃
0.1
0.01
1
10
100
OUTPUT CURENT : IO (mA)
1000
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1
10
100
1000
OUOPUT CURRENT : IO (mA)
2/2
2009.05 - Rev.B
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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