Rohm DTC014TEB 100ma/50v digital transistors(with built-in resistors) Datasheet

100mA/50V Digital transistors(with built-in resistors)
DTC014TM / DTC014TEB / DTC014TUB
Dimensions (Unit : mm)
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
VMT3
Abbreviated symbol : 10
EMT3F
(3)
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
(1)
(2)
Abbreviated symbol : 10
UMT3F
2.0
0.53
0.9
1.25
(3)
0.425
2.1
0.425
0.32
(1)
0.53
Applications
Inverter, Interface, Driver
(2)
0.65 0.65
1.3
0.13
Abbreviated symbol : 10
Packaging specifications
Package
Packaging Type
Type
Code
Basic ordering
unit (pieces)
DTC014TM
DTC014TEB
DTC014TUB
Equivalent circuit
VMT3
Taping
T2L
EMT3F
Taping
TL
UMT3F
Taping
TL
8000
3000
3000
○
-
○
-
○
R1
C
B : ベース
C : コレクタ
E : エミッタ
E
B
R 1=10k
Absolute maximum (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation *
Junction temperature
Range of storage temperature
Symbol
M
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Limits(DTC014T□)
EB
UB
50
50
5
100
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
C
C
* Each terminal mounted on a reference land
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©2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.08 - Rev.A
Data Sheet
DTC014TM / DTC014TEB / DTC014TUB
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Collector-Base breakdown voltage
BVCBO
50
-
-
V
IC=50A
Collector-Emitter breakdown voltage
BVCEO
50
-
-
V
IC=1mA
Emitter-Base breakdown voltage
BVEBO
5
-
-
V
IE=50A
ICBO
-
-
500
nA
VCB=50V
Collector cut-off current
Emitter cut-off current
Collector-Emitter saturation voltage
DC current gain
Max.
Test Conditions
Unit
IEBO
-
-
500
nA
VEB=4V
VCE(sat)
-
0.05
0.15
V
IC=5mA/ IB=0.5mA
hFE
100
-
600
-
VCE=10V / IC=5mA
VCE=10V / IE=-5mA
f=100MHz
Transition frequency *
fT
-
250
-
MHz
Input resistance
R1
7
10
13
k
* Characteristics of built-in transistor
DC CURRENT GAIN : hFE
1000
VCE=10V
100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
10
1
0.1
1
10
COLLECTOR SATURATION VOLTAGE :
VCE(sat) (V)
Electrical characteristics curves
100
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© 2011 ROHM Co., Ltd. All rights reserved.
Ic/IB=10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
0.1
0.01
0.001
0.1
COLLECTOR CURRENT : IC (mA)
Fig.1 DC Current Gain vs. Collector Current
1
1
10
100
COLLECTOR CURRNET : IC (mA)
Fig.2 Collector Saturation Voltage vs. Collector Current
2/2
2011.08 - Rev.A
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R1120A
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