UTC DTC144TL-AL3-R Npn digital transistor (built- in bias resistors) Datasheet

UNISONIC TECHNOLOGIES CO., LTD
DTC144T
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
3
1
2
SOT-23
FEATURES
3
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
1
2
SOT-323
3
EQUIVALENT CIRCUIT
2
B
1
C
R1
SOT-523
*Pb-free plating product number:DTC144TL
E
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
DTC144T-AE3-R
DTC144TL-AE3-R
DTC144T-AL3-R
DTC144TL-AL3-R
DTC144T-AN3-R
DTC144TL-AN3-R
DTC144TL-AE3-R
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
CE4T
For SOT -23/SOT-323 Package
C9T
For SOT-523 Package
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R206-066,B
DTC144T
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
50
V
50
V
5
V
100
mA
SOT-523
150
mW
Collector Power Dissipation
PC
SOT-23/SOT-323
200
mW
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Input Resistance
Transition Frequency
* Transition frequency of the device
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
hFE
R1
fT
TEST CONDITIONS
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=4V
IC=5mA, IB=0.5mA
VCE=5V, IC=1mA
VCE=10V, IE=-5mA, f=100MHz*
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
50
50
5
TYP
100
32.9
250
47
250
MAX UNIT
V
V
V
0.5
µA
0.5
µA
0.3
V
600
61.1
kΩ
MHz
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■
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Saturation Voltage vs. Collector
Current
Collector Saturation Voltage, V CE(SAT) (mV)
DC Current Gain vs. Collector Current
1k
DC Current Gain, hFE
500
VCE=5V
200
100
Ta=100℃
50
25℃
20
-40℃
10
5
2
1
0.1
0.2
0.5 1
2
5
10
20
50
100
Collector Current, Ic (mA)
1000
500
200
100
50
Ic/IB=10
Ta=100℃
25℃
-40℃
20
10
5
2
1
0.1
0.2
0.5
1
2
5
10
20
50
100
Collector Current, Ic (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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