DinTek DTC2059 P-channel 20 v (d-s) mosfet load switch Datasheet

DTC2059
www.din-tek.jp
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.075 at VGS = - 4.5 V
- 6.6a
0.081 at VGS = - 3.6 V
- 6a
0.090 at VGS = - 2.5 V
- 6a
Qg (Typ.)
12.5 nC
S
D
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices
- Load Switch
- Charger Switch
- Battery Switch
- DC/DC Converter
G
D
G
D
S
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
± 12
Parameter
TC = 70 °C
TA = 25 °C
- 6a
ID
- 6a, b, c
- 5.2b, c
TA = 70 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 25 °C
- 4.8
IS
- 1.9b, c
5.7
3
PD
W
2.3b, c
1.2b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 20
TC = 25 °C
TC = 70 °C
V
- 6.6 a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
- 55 to 150
°C
260
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Symbol
Typical
Maximum
t≤5s
RthJA
45
55
Steady State
RthJF
18
22
Unit
°C/W
1
DTC2059
www.din-tek.jp
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
- 14
ID = - 250 µA
VGS(th) Temperature Coefficient
V
mV/°C
3.2
- 1.4
V
VDS = 0 V, VGS = ± 12 V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
-5
VDS ≤ - 5 V, VGS = - 4.5 V
- 0.6
µA
A
- 20
VGS = - 4.5 V, ID = - 4.9 A
0.060
0.075
VGS = - 3.6 V, ID = - 4.6 A
0.076
0.081
VGS = - 2.5 V, ID = - 2.0 A
0.083
0.090
VDS = - 10 V, ID = - 4.9 A
16
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1000
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 10 V, ID = - 6.5 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 6.5 A
td(off)
pF
25
38
12.5
19
2
VDD = - 10 V, RL = 1.9 Ω
ID ≅ - 5.2 A, VGEN = - 4.5 V, Rg = 1 Ω
0.9
4.6
9.2
25
50
20
40
30
60
tf
12
25
td(on)
10
20
tr
td(off)
nC
4
f = 1 MHz
td(on)
tr
225
195
VDD = - 10 V, RL = - 1.9 Ω
ID ≅ - 5.2 A, VGEN = - 10 V, Rg = 1 Ω
tf
10
20
27
55
12
25
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
-6
- 20
IS = - 5.2 A, VGS = 0 V
IF = - 5.2 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
20
40
ns
10
20
nC
10
10
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTC2059
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
5
V GS = 5 V thru 3 V
V GS = 2.5 V
4
ID - Drain Current (A)
ID - Drain Current (A)
16
12
V GS = 2 V
8
3
2
T C = 25 °C
4
1
T C = 125 °C
V GS = 1.5 V
0
T C = - 55 °C
0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.08
1800
V GS = 2.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1500
0.06
0.04
V GS = 3.6 V
V GS = 4.5 V
0.02
1200
Ciss
900
600
Coss
Crss
300
0
0
0
4
8
16
12
20
0
3
ID - Drain Current (A)
9
12
Capacitance
On Resistance vs. Drain Current
1.6
10
ID = 6.5 A
V GS = 4.5 V; 3.6 V; I D = 4.9 A
1.4
V DS = 10 V
6
V DS = 5 V
V DS = 16 V
4
(Normalized)
8
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
6
VDS - Drain-to-Source Voltage (V)
1.2
V GS = 2.5 V; I D = 2 A
1.0
0.8
2
0
0
5
10
15
20
Qg - Total Gate Charge (nC)
Gate Charge
25
30
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
DTC2059
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.12
100
ID = 4.9 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.10
T J = 150 °C
10
T J = 25 °C
1
0.08
0.06
T J = 125 °C
0.04
T J = 25 °C
0.02
0
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Forward Diode Voltage vs. Temperature
On-Resistance vs. Gate-to-Source Voltage
1.2
50
1.1
40
1.0
30
Power (W)
VGS(th) (V)
ID = 250 μA
0.9
0.8
20
0.7
10
0.6
0.5
- 50
- 25
0
25
50
75
100
125
0
10-3
150
10-2
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
Limited by RDS(on) *
ID - Drain Current (A)
10
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
10-1
100
100
600
DTC2059
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
12
6
5
4
Power (W)
ID - Drain Current (A)
9
Package Limited
6
3
2
3
1
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
125
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTC2059
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 95 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
1
10
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Package outline - SOT89
D
A
C
D1
E
H
E1
L
B
e
B1
DIM
e1
Millimeters
Inches
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
B
0.44
0.56
0.017
B1
0.36
0.48
C
0.35
D
D1
DIM
Millimeters
Min
Max
Min
Max
E
2.29
2.60
0.090
0.102
0.022
E1
2.13
2.29
0.084
0.090
0.014
0.019
e
1.50 BSC
0.059 BSC
0.44
0.014
0.017
e1
3.00 BSC
0.118 BSC
4.40
4.60
0.173
0.181
H
3.94
4.25
0.155
0.167
1.62
1.83
0.064
0.072
L
0.89
1.20
0.035
0.047
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
1
Inches
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Disclaimer
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
1
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