UTC DTD143E-AE3-6-R Digital transistors (built- in resistors) Datasheet

UNISONIC TECHNOLOGIES CO., LTD
DTD143E
NPN EPITAXIAL SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT- IN RESISTORS)
3
FEATURES
* Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent
circuit).
* The bias resistors consist of thin film resistors with complete
isolation to allow negative biasing of the input. They also have
the advantage of almost completely eliminating parasitic effects.
* Only the on / off conditions need to be set for operation, making
device design easy.
SOT-23
3
2
OUT
1
SOT-323
EQUIVALENT CIRCUIT
R1
1
2
*Pb-free plating product number:DTD143EL
IN
R2
GND
OUT
IN
GND
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
DTD143E-AE3-6-R
DTD143EL-AE3-6-R
DTD143E-AL3-6-R
DTD143EL-AL3-6-R
DTD143EL-AE3-6-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
Package
SOT-23
SOT-323
Pin Assignment
1
2
3
G
I
O
G
I
O
Packing
Tape Reel
Tape Reel
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AE3: SOT-23, AL3: SOT-323
(4) L: Lead Free Plating, Blank: Pb/Sn
MARKING
DE3
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Copyright © 2005 Unisonic Technologies Co., Ltd
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DTD143E
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
50
V
Input Voltage
VIN
-10 ~ +30
V
Output Current
IOUT
500
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (Ta=25°C)
PARAMETER
SYMBOL
VIN(OFF)
Input Voltage
VIN(ON)
Output Voltage
VOUT(ON)
Input Current
IIN
Output Current
IOUT(OFF)
DC Current Gain
GIN
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
fT
* Transition frequency of the device
TEST CONDITIONS
VCC =5V, IOUT =100µA
VOUT =0.3V, IOUT =20mA
IOUT/IIN =50mA/2.5mA
VIN=5V
VCC =50V, VIN =0V
VOUT =5V, IOUT =50mA
VCE =10V, IE =−50mA, f=100MHz *
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
0.5
UNIT
0.1
0.3
1.8
0.5
V
mA
µA
4.7
1
200
6.11
1.2
KΩ
3
47
3.29
0.8
V
MHz
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NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTIC
Input Voltage vs. Output Current
(ON Characteristics)
100
Output Current vs. Input Voltage
(OFF Characteristics)
10m
5m
VOUT=0.3V
10
Ta=-40℃
25℃
5
100℃
2
1
500m
200m
100m
500μ1m 2m
50μ
100μ
50μ
20μ
10μ
5μ
2μ
1μ
5m 10m20m 50m100m200m 500m
0
1K
1.5
2.0
1
2.5
3.0
Ta=100℃
25℃
-40℃
100
50
20
10
5
2
5m 10m20m 50m100m200m500m
Output Current, IOUT (A)
lOUT/lIN=20
500m
Output Voltage, VOUT(ON) (V)
DC Current Gain, GI
1.0
Output Voltage vs. Output Current
VOUT=5V
1
500μ1m 2m
0.5
Input Voltage, VI(OFF) (V)
DC Current Gain vs. Output Current
200
Ta=100℃
25℃
-40℃
200μ
Output Current, IOUT (A)
500
VCC=5V
2m
1m
20
Output Current, IOUT (A)
Input Voltage, VIN (ON) (V)
50
Ta=100℃
25℃
-40℃
200m
100m
50m
20m
10m
5m
2m
1m
500μ1m 2m
5m 10m 20m 50m100m200m500m
Output Current, IOUT (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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