DinTek DTM9410 N-channel 30-v (d-s) mosfet halogen-free Datasheet

DTM9410
www.din-tek.jp
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
ID (A)a
RDS(on) (Ω)
0.032 at V
30
GS =
10 V
6.8
0.045 at VGS = 4.5 V
5.8
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
9.2 nC
APPLICATIONS
• Notebook Load Switch
• Low Current dc-to-dc
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipation
ID
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
1.7b,c
4.1
2.6
PD
2b,c
1.25b,c
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
6.5b,c
4.9b,c
30
2.7
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
30
± 20
6.8 a
5a
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot
t≤5s
Steady State
Symbol
RthJA
RthJF
Typical
45
25
Maximum
62.5
30
Unit
°C/W
Notes:
a. Package Limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
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DTM9410
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
mV/°C
- 6.2
1
3
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 5 A
20
0.032
VGS = 4.5 V, ID = 4 A
0.029
0.045
VDS = 10 V, ID = 5 A
24
1295
VDS = 15 V, VGS = 0 V, f = 1 MHz
170
pF
72
VDS = 15 V, VGS = 10 V, ID = 5 A
21.8
33
9.2
14
VDS = 15 V, VGS = 4.5 V, ID = 5 A
3.8
f = 1 MHz
2.4
21
VDD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
Ω
40
25
40
tf
9
18
td(on)
10
20
tr
nC
2.5
14
td(off)
Ω
S
20
td(off)
µA
A
0.016
td(on)
tr
V
33
VDD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
tf
8
16
21
35
8
16
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
2.7
30
IS = 1.7 A, VGS = 0 V
IF = 3 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.77
1.2
V
21
40
ns
15
30
nC
13
8
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTM9410
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
1.5
VGS = 10 V thru 4 V
1.2
I D - Drain Current (A)
I D - Drain Current (A)
24
18
12
6
0.9
0.6
TC = 25 °C
0.3
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0.0
0.0
0.5
1.5
1.0
2.0
2.5
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
1600
1280
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
0.026
VGS = 4.5 V
0.022
0.018
0.014
960
640
320
VGS = 10 V
0.010
Coss
Crss
0
0
6
12
18
24
30
0
18
12
24
I D - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
30
1.7
ID = 5 A
ID = 5 A
8
1.5
VDS = 10 V
VDS = 15 V
6
VDS = 20 V
4
2
VGS = 10 V
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
6
1.3
VGS = 4.5 V
1.1
0.9
0
0
5
10
15
20
25
0.7
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
3
DTM9410
www.din-tek.jp
100
0.10
10
0.08
1
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
TJ = 150 °C
0.1
TJ = 25 °C
0.06
0.04
TA = 125 °C
0.02
0.01
TA = 25 °C
0.001
0.0
0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
VSD - Source-to-Drain Voltage (V)
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Temperature
0.6
60
ID = 250 µA
0
48
ID = 5 mA
Power (W)
VGS(th) Variance (V)
0.3
- 0.3
- 0.6
- 0.9
- 50
36
24
12
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
Threshold Voltage
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
1 s, 10 s
DC
TA = 25 °C
Single Pulse
0.001
0.1
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
1
Single Pulse Power, Junction-to-Ambient
100
0.01
0.1
Time (s)
10
DTM9410
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
I D - Drain Current (A)
10
Package Limited
7
5
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
5
1.5
4
1.2
3
0.9
Power (W)
Power (W)
Current Derating*
2
1
0.6
0.3
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTM9410
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
0.05
0.01
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
1
10
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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Application Note
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
1
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
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Disclaimer
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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