DinTek DTS3401A P-channel 30-v (d-s) mosfet halogen-free Datasheet

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P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) (Ω)
ID (A)a, e
0.053 at VGS = - 10 V
- 5.6
0.070 at VGS = - 4.5 V
- 4.6
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
7 nC
APPLICATIONS
• Load Switch
• Notebook Adaptor Switch
• DC/DC Converter
TO-236
(SOT-23)
S
G
1
S
2
3
D
G
Top View
DTS3401A
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
- 4.7
ID
TA = 25 °C
- 4.2b, c
- 3.3b, c
TA = 70 °C
Maximum Power Dissipation
IDM
TC = 25 °C
- 25
- 1b, c
TC = 25 °C
2.5
TC = 70 °C
1.6
PD
TA = 25 °C
A
- 2.1
IS
TA = 25 °C
W
1.25b, c
0.8b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
V
- 5.6
TC = 70 °C
Pulsed Drain Current
Continous Source-Drain Diode Current
Unit
TJ, Tstg
°C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, d
t≤5s
RthJA
75
100
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
40
50
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 166 °C/W.
e. Package Limited.
1
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
- 19
ID = - 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = - 250 µA
- 2.5
V
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
-5
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≤ - 5 V, VGS = - 10 V
4.4
- 1.2
- 25
µA
A
VGS = - 10 V, ID = - 4.2 A
0.037
0.053
VGS = - 4.5 V, ID = - 3.2 A
0.062
0.070
VDS = - 15 V, ID = - 4.2 A
10
VDS = - 15 V, VGS = 0 V, f = 1 MHz
115
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
590
pF
93
VDS = - 15 V, VGS = - 10 V, ID = - 4.2 A
13.6
21
7
11
2.3
VDS = - 15 V, VGS = - 4.5 V, ID = - 4.2 A
3.2
5
10
30
45
25
38
16
24
tf
8
16
td(on)
8
16
10
20
18
27
8
16
f = 1 MHz
td(on)
tr
td(off)
tr
td(off)
nC
VDD = - 15 V, RL = 4.5 Ω
ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 15 V, RL = 4.5 Ω
ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω
tf
1
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 4.2
- 25
IS = - 3.3 A, VGS = 0 V
IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
17
26
ns
9
18
nC
10
7
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
3.0
VGS = 5 V
VGS = 10 V thru 6 V
2.4
I D - Drain Current (A)
I D - Drain Current (A)
20
15
VGS = 4 V
10
1.8
1.2
TC = 25 °C
5
0.6
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
3
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1000
0.10
800
0.08
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2
0.06
VGS = 10 V
0.04
Ciss
600
400
Coss
200
0.02
Crss
0
0.00
0
5
10
15
20
0
25
10
15
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
20
1.7
10
ID = 4.2 A
ID = 4.2 A
VDS = 15 V
1.5
VDS = 8 V
6
VDS = 24 V
4
VGS = 10 V
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
5
1.3
VGS = 4.5 V
1.1
0.9
2
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
12
15
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
100
TJ = 25 °C
1
0.08
TJ = 125 °C
0.06
TJ = 25 °C
0.04
0.02
0.1
0.0
VGS(th) (V)
R DS(on) - On-Resistance (Ω)
TJ = 150 °C
10
0.3
0.6
0.9
1.2
2
1.5
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
2.0
8
1.8
ID = 250 µA
1.6
1.4
6
4
2
- 25
0
25
50
75
100
125
0
0.01
150
TA = 25 °C
0.1
1
TJ - Temperature (°C)
100
1000
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
I D - Drain Current (A)
10
Time (s)
Threshold Voltage
10
100 µs
1 ms
1
10 ms
0.1
100 ms
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
1 s, 10 s
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
6
Source-Drain Diode Forward Voltage
2.2
1.2
- 50
4
VSD - Source-to-Drain Voltage (V)
Power (W)
I S - Source Current (A)
ID = 4.2 A
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
I D - Drain Current (A)
6
Package Limited
4
2
0
25
0
50
75
100
125
150
TC - Case Temperature (°C)
2.5
1.0
2.0
0.8
1.5
0.6
Power (W)
Power (W)
Current Derating*
1.0
0.5
0.4
0.2
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
.
6
Package Information
www.din-tek.jp
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
INCHES
Min
Max
Min
Max
A
0.89
1.12
0.035
0.044
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
1
Application Note
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0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
1
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death.
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Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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