DinTek DTU40N03 Trenchfetâ® power mosfet Datasheet

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N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0057 at VGS = 10 V
40
0.0076 at VGS = 4.5 V
40
VDS (V)
30
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
Qg (Typ.)
13.8 nC
RoHS
COMPLIANT
APPLICATIONS
• Low-Side Switch
• Notebook DC/DC
D
TO-252
G
G
D
S
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Limit
30
± 20
40a
40a
22.7b, c
19.7b, c
70
35
61
40a
4.1b, c
50
32
5b, c
3.2b, c
- 55 to 150
260
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
20
2.0
Maximum
25
2.5
Unit
°C/W
Notes:
a. Based on TC = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
1
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
V
27
ID = 250 µA
mV/°C
- 5.5
VGS(th)
VDS = VGS , ID = 250 µA
3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
1
µA
A
50
VGS = 10 V, ID = 20 A
0.0047
0.0057
VGS = 4.5 V, ID = 18 A
0.0062
0.0076
VDS = 15 V, ID = 20 A
90
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
1720
VDS = 15 V, VGS = 0 V, f = 1 MHz
130
VDS = 15 V, VGS = 10 V, ID = 20 A
VDS = 15 V, VGS = 4.5 V, ID = 20 A
td(off)
29
44
13.8
21
5.0
f = 1 MHz
VDD = 15 V, RL = 15 Ω
ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω
1.1
2.2
25
40
14
25
30
45
tf
15
25
td(on)
11
20
tr
td(off)
nC
4.6
td(on)
tr
pF
355
VDD = 15 V, RL = 15 Ω
ID ≅ 1.0 A, VGEN = 10 V, Rg = 1 Ω
tf
9
15
27
40
9
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
40
70
IS = 4.1 A, VGS = 0 V
IF = 4.1 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.75
1.2
V
25
50
ns
17
35
nC
13
12
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
1.2
VGS = 10 thru 4 V
1.0
50
I D - Drain Current (A)
I D - Drain Current (A)
60
40
VGS = 3 V
30
20
TC = 25 °C
0.6
0.4
TC = 125 °C
0.2
10
0
0.0
0.5
1.0
1.5
TC = - 55 °C
0.0
0.0
2.0
0.5
1.0
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.0
2400
0.007
C - Capacitance (pF)
0.006
VGS = 10 V
0.005
Ciss
1800
VGS = 4.5 V
1200
600
Coss
0.004
Crss
0
0.003
0
10
20
30
40
50
60
6
0
70
ID - Drain Current (A)
12
18
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.7
10
ID = 20 A
ID = 20 A
VDS = 15 V
1.5
8
VDS = 7.5 V
6
VDS = 22.5 V
4
VGS = 10 V
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.5
VDS - Drain-to-Source Voltage (V)
0.008
R DS(on) - On-Resistance (Ω)
0.8
1.3
VGS = 4.5 V
1.1
0.9
2
0
0
6
12
18
Qg - Total Gate Charge (nC)
Gate Charge
24
30
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.030
0.025
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.1
TJ = - 50 °C
0.01
0.020
0.015
TJ = 125 °C
0.010
0.005
TJ = 25 °C
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
VSD - Source-to-Drain Voltage (V)
0.2
160
Power (W)
VGS(th) Variance (V)
200
- 0.1
ID = 1 mA
- 0.7
0
25
50
75
100
8
9
10
125
80
0
0.001
150
0.01
0.1
1
Time (s)
TJ - Temperature (°C)
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
100 µs
1 ms
10
I D - Drain Current (A)
7
120
Threshold Voltage
10 ms
100 ms
1
1s
10 s
0.1
100 s
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
6
40
ID = 250 µA
- 25
5
On-Resistance vs. Gate-to-Source Voltage
0.5
- 1.0
- 50
4
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
- 0.4
3
100
10
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
I D - Drain Current (A)
80
60
Package Limited
40
20
0
25
0
50
75
100
125
150
TC - Case Temperature (°C)
60
2.5
48
2.0
Power (W)
Power (W)
Current Derating*
36
24
12
1.5
1.0
0.5
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
6
1
Package Information
TO-252AA CASE OUTLINE
E
C2
L3
H
D
b2
C
A1
D1
e1
L
gage plane height (0.5 mm)
e
L5
L4
b
INCHES
MILLIMETERS
A
b3
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
5.21
-
0.205
0.265
E
6.35
6.73
0.250
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
0.090 BSC
e1
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
• Dimension L3 is for reference only.
1
Application Note
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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APPLICATION NOTE
1
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