DinTek DTU70N03 Halogen-free according to iec 61249-2-21 Datasheet

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N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.0036 at VGS = 10 V
70d
0.0044 at VGS = 4.5 V
70d
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
67
APPLICATIONS
D
• Power Supply
- Secondary Synchronous Rectification
• DC/DC Converter
TO-252
G
G
D
S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Parameter
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
IDM
Pulsed Drain Current
Avalanche Current
a
L = 0.1 mH
Single Avalanche Energy
TC = 25 °C
Maximum Power Dissipationa
TA = 25 °C
Operating Junction and Storage Temperature Range
c
V
70d
60d
120
IAS
45
EAS
101
PD
Unit
78.1
A
mJ
b
3.1
W
TJ, Tstg
- 55 to 150
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
RthJA
40
RthJC
1.6
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = 250 µA
30
VGS(th)
VDS = VGS, ID = 250 µA
1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
2.5
± 250
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 125 °C
50
VDS = 30 V, VGS = 0 V, TJ = 150 °C
250
ID(on)
RDS(on)
gfs
VDS ≥ 10 V, VGS = 10 V
50
V
nA
µA
A
VGS = 10 V, ID = 22 A
0.0030
0.0036
VGS = 4.5 V, ID = 20 A
0.0036
0.0044
VDS = 15 V, ID = 20 A
110
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain
Chargec
680
Rg
Turn-On Delay Timec
Rise Timec
67
VDS = 15 V, VGS = 10 V, ID = 20 A
Fall Timec
td(off)
100
nC
10.5
12.2
f = 1 MHz
td(on)
tr
c
pF
400
Qgd
Gate Resistance
Turn-Off Delay Time
3535
VGS = 0 V, VDS = 15 V, f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Drain-Source Body Diode Ratings and Characteristics TC = 25 °C
0.3
1.4
2.8
11
20
10
20
35
53
10
20
70
Pulsed Current
ISM
120
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 10 A, VGS = 0 V
trr
IRM(REC)
Qrr
ns
b
IS
Continuous Current
Ω
IF = 10 A, dI/dt = 100 A/µs
A
0.83
1.5
V
41
62
ns
2
3
A
40
60
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
0.0045
I D - Drain Current (A)
R DS(on) - On-Resistance (Ω)
VGS = 10 V thru 4 V
100
VGS = 3 V
80
60
40
0.0040
VGS = 4.5 V
0.0035
VGS = 10 V
0.0030
20
0
0.0
0.0025
0.5
1.0
1.5
2.0
0
20
40
VDS - Drain-to-Source Voltage (V)
80
100
ID - Drain Current (A)
Output Characteristics
On-Resistance vs. Drain Current
5
0.020
4
0.016
R DS(on) - On-Resistance (Ω)
I D - Drain Current (A)
60
3
2
TC = 25 °C
1
0.012
0.008
TJ = 150 °C
0.004
TC = 125 °C
0
0.0
TJ = 25 °C
TC = - 55 °C
0.6
1.2
1.8
2.4
0.000
3.0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
10
10
300
VGS - Gate-to-Source Voltage (V)
g fs - Transconductance (S)
ID = 20 A
TC = - 55 °C
240
180
TC = 25 °C
120
TC = 125 °C
60
8
VDS = 15 V
6
VDS = 8 V
VDS = 24 V
4
2
0
0
0
12
24
36
48
60
0
20
40
60
I D - Drain Current (A)
Qg - Total Gate Charge (nC)
Transconductance
Gate Charge
80
3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.1
100
I S - Source Current (A)
1.8
ID = 250 µA
TJ = 150 °C
VGS(th) (V)
10
TJ = 25 °C
1.5
1.2
1
0.9
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0.6
- 50
1.2
0
25
50
75
TJ - Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
5000
100
125
150
100
125
150
VDS - Drain-to-Source Voltage (V)
41
Ciss
4000
C - Capacitance (pF)
- 25
VSD - Source-to-Drain Voltage (V)
3000
2000
Coss
1000
39
ID = 250 µA
37
35
Crss
0
0
5
10
15
20
25
33
- 50
30
- 25
0
25
50
75
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Capacitance
Drain Source Breakdown vs. Junction Temperature
1.8
160
1.5
120
I D - Drain Current (A)
(Normalized)
R DS(on) - On-Resistance
ID = 20 A
1.2
0.9
VGS = 10 V
0.6
- 50
4
80
40
VGS = 4.5 V
- 25
Package Limited
0
25
0
50
75
100
125
150
0
25
50
75
100
TJ - Junction Temperature (°C)
TC - Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
125
150
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TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1000
100
Limited by RDS(on)*
TJ = 25 °C
TJ = 150 °C
10
I D - Drain Current (A)
I DAV (A)
100
100 µA
10
1 ms
10 ms, 100 ms
1 s, 10 s, DC
1
TC = 25 °C
Single Pulse
0.1
1
10-5
10-4
10-3
10-2
10-1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
0.01
0.1
BVDSS
Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
5
Package Information
TO-252AA CASE OUTLINE
E
C2
L3
H
D
b2
C
A1
D1
e1
L
gage plane height (0.5 mm)
e
L5
L4
b
INCHES
MILLIMETERS
A
b3
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
5.21
-
0.205
0.265
E
6.35
6.73
0.250
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
0.090 BSC
e1
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
• Dimension L3 is for reference only.
1
Application Note
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
1
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including but not limited to the warranty expressed therein.
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Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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