Elpida EBE51RD8ABFA 512mb registered ddr2 sdram dimm (64m words x 72 bits, 1 rank) Datasheet

DATA SHEET
512MB Registered DDR2 SDRAM DIMM
EBE51RD8ABFA (64M words × 72 bits, 1 Rank)
Description
Features
The EBE51RD8ABFA is a 64M words × 72 bits, 1 rank
DDR2 SDRAM Module, mounting 9 pieces of DDR2
SDRAM sealed in FBGA (µBGA) package. Read and
write operations are performed at the cross points of
the CK and the /CK. This high-speed data transfer is
realized by the 4bits prefetch-pipelined architecture.
Data strobe (DQS and /DQS) both for read and write
are available for high speed and reliable data bus
design. By setting extended mode register, the on-chip
Delay Locked Loop (DLL) can be set enable or disable.
This module provides high density mounting without
utilizing surface mount technology.
Decoupling
capacitors are mounted beside each FBGA (µBGA) on
the module board.
• 240-pin socket type dual in line memory module
(DIMM)
 PCB height: 30.0mm
 Lead pitch: 1.0mm
 Lead-free
• 1.8V power supply
• Data rate: 533Mbps/400Mbps (max.)
• 1.8 V (SSTL_18 compatible) I/O
• Double-data-rate architecture: two data transfers per
clock cycle
• Bi-directional, data strobe (DQS and /DQS) is
transmitted /received with data, to be used in
capturing data at the receiver
• DQS is edge aligned with data for READs; center
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
referenced to both edges of DQS
• Four internal banks for concurrent operation
(Component)
• Data mask (DM) for write data
• Burst length: 4, 8
• /CAS latency (CL): 3, 4, 5
• Auto precharge option for each burst access
• Auto refresh and self refresh modes
• 7.8µs average periodic refresh interval
• Posted CAS by programmable additive latency for
better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality
• /DQS can be disabled for single-ended Data Strobe
operation
• 1 piece of PLL clock driver, 1 pieces of register driver
and 1 piece of serial EEPROM (2k bits EEPROM) for
Presence Detect (PD)
Note: Do not push the components or drop the
modules in order to avoid mechanical defects,
which may result in electrical defects.
Document No. E0402E40 (Ver. 4.0)
Date Published July 2004 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2003-2004
EBE51RD8ABFA
Ordering Information
Data rate
Mbps (max.)
Part number
Component
JEDEC speed bin*1
(CL-tRCD-tRP)
EBE51RD8ABFA-5C-E
533
DDR2-533 (4-4-4)
EBE51RD8ABFA-4A-E
400
DDR2-400 (3-3-3)
Contact
pad
Package
240-pin DIMM
(lead-free)
Gold
Mounted devices
EDE5108ABSE-5C
EDE5108ABSE-5C, -4A
Note: 1. Module /CAS latency = component CL + 1
Pin Configurations
Front side
1 pin
121 pin
64 pin 65 pin
120 pin
184 pin 185 pin
240 pin
Back side
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
1
VREF
61
A4
121
VSS
181
VDD
2
VSS
62
VDD
122
DQ4
182
A3
3
DQ0
63
A2
123
DQ5
183
A1
4
DQ1
64
VDD
124
VSS
184
VDD
5
VSS
65
VSS
125
DM0/DQS9
185
CK0
6
/DQS0
66
VSS
126
NU/ /DQS9
186
/CK0
7
DQS0
67
VDD
127
VSS
187
VDD
8
VSS
68
NC
128
DQ6
188
A0
9
DQ2
69
VDD
129
DQ7
189
VDD
10
DQ3
70
A10
130
VSS
190
BA1
11
VSS
71
BA0
131
DQ12
191
VDD
12
DQ8
72
VDD
132
DQ13
192
/RAS
13
DQ9
73
/WE
133
VSS
193
/CS0
14
VSS
74
/CAS
134
DM1/DQS10
194
VDD
15
/DQS1
75
VDD
135
NU/ /DQS10
195
ODT0
16
DQS1
76
NC
136
VSS
196
A13
17
VSS
77
NC
137
NC
197
VDD
18
/RESET
78
VDD
138
NC
198
VSS
19
NC
79
VSS
139
VSS
199
DQ36
20
VSS
80
DQ32
140
DQ14
200
DQ37
21
DQ10
81
DQ33
141
DQ15
201
VSS
22
DQ11
82
VSS
142
VSS
202
DM4/DQS13
23
VSS
83
/DQS4
143
DQ20
203
NU/ /DQS13
24
DQ16
84
DQS4
144
DQ21
204
VSS
25
DQ17
85
VSS
145
VSS
205
DQ38
26
VSS
86
DQ34
146
DM2/DQS11
206
DQ39
27
/DQS2
87
DQ35
147
NU/ /DQS11
207
VSS
28
DQS2
88
VSS
148
VSS
208
DQ44
Data Sheet E0402E40 (Ver. 4.0)
2
EBE51RD8ABFA
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
29
VSS
89
DQ40
149
DQ22
209
DQ45
30
DQ18
90
DQ41
150
DQ23
210
VSS
31
DQ19
91
VSS
151
VSS
211
DM5/DQS14
32
VSS
92
/DQS5
152
DQ28
212
NU/ /DQS14
33
DQ24
93
DQS5
153
DQ29
213
VSS
34
DQ25
94
VSS
154
VSS
214
DQ46
35
VSS
95
DQ42
155
DM3/DQS12
215
DQ47
36
/DQS3
96
DQ43
156
NU/ /DQS12
216
VSS
37
DQS3
97
VSS
157
VSS
217
DQ52
38
VSS
98
DQ48
158
DQ30
218
DQ53
39
DQ26
99
DQ49
159
DQ31
219
VSS
40
DQ27
100
VSS
160
VSS
220
NC
41
VSS
101
SA2
161
CB4
221
NC
42
CB0
102
NC
162
CB5
222
VSS
43
CB1
103
VSS
163
VSS
223
DM6/DQS15
44
VSS
104
/DQS6
164
DM8/DQS17
224
NU/ /DQS15
45
/DQS8
105
DQS6
165
NU/ /DQS17
225
VSS
46
DQS8
106
VSS
166
VSS
226
DQ54
47
VSS
107
DQ50
167
CB6
227
DQ55
48
CB2
108
DQ51
168
CB7
228
VSS
49
CB3
109
VSS
169
VSS
229
DQ60
50
VSS
110
DQ56
170
VDD
230
DQ61
51
VDD
111
DQ57
171
NC
231
VSS
52
CKE0
112
VSS
172
VDD
232
DM7/DQS16
53
VDD
113
/DQS7
173
NC
233
NU/ /DQS16
54
NC
114
DQS7
174
NC
234
VSS
55
NC
115
VSS
175
VDD
235
DQ62
56
VDD
116
DQ58
176
A12
236
DQ63
57
A11
117
DQ59
177
A9
237
VSS
58
A7
118
VSS
178
VDD
238
VDDSPD
59
VDD
119
SDA
179
A8
239
SA0
60
A5
120
SCL
180
A6
240
SA1
Data Sheet E0402E40 (Ver. 4.0)
3
EBE51RD8ABFA
Pin Description
Pin name
Function
A0 to A13
Address input
Row address
Column address
A0 to A13
A0 to A9
A10 (AP)
Auto precharge
BA0, BA1
Bank select address
DQ0 to DQ63
Data input/output
CB0 to CB7
Check bit (Data input/output)
/RAS
Row address strobe command
/CAS
Column address strobe command
/WE
Write enable
/CS0
Chip select
CKE0
Clock enable
CK0
Clock input
/CK0
Differential clock input
DQS0 to DQS17, /DQS0 to /DQS17
Input and output data strobe
DM0 to DM8
Input mask
SCL
Clock input for serial PD
SDA
Data input/output for serial PD
SA0 to SA2
Serial address input
VDD
Power for internal circuit
VDDSPD
Power for serial EEPROM
VREF
Input reference voltage
VSS
Ground
ODT0
ODT control
/RESET
Reset pin (forces register and PLL inputs low) *1
NC
No connection
NU
Not usable
Note: 1. Reset pin is connected to both OE of PLL and reset to register.
Data Sheet E0402E40 (Ver. 4.0)
4
EBE51RD8ABFA
1
Serial PD Matrix*
Byte No.
0
1
Function described
Number of bytes utilized by module
manufacturer
Total number of bytes in serial PD
device
Bit7
Bit6
Bit5 Bit4
Bit3
Bit2
Bit1 Bit0
Hex value
Comments
1
0
0
0
0
0
0
0
80H
128 bytes
0
0
0
0
1
0
0
0
08H
256 bytes
2
Memory type
0
0
0
0
1
0
0
0
08H
DDR2 SDRAM
3
Number of row address
0
0
0
0
1
1
1
0
0EH
14
4
Number of column address
0
0
0
0
1
0
1
0
0AH
10
5
Number of DIMM ranks
0
1
1
0
0
0
0
0
60H
1
6
Module data width
0
1
0
0
1
0
0
0
48H
72
7
Module data width continuation
0
0
0
0
0
0
0
0
00H
0
8
Voltage interface level of this assembly 0
0
0
0
0
1
0
1
05H
SSTL 1.8V
9
DDR SDRAM cycle time, CL = 5
-5C
0
0
1
1
1
1
0
1
3DH
3.75ns*1
0
1
0
1
0
0
0
0
50H
5.0ns*1
0
1
0
1
0
0
0
0
50H
0.5ns*1
0
1
1
0
0
0
0
0
60H
0.6ns*1
-4A
10
SDRAM access from clock (tAC)
-5C
-4A
11
DIMM configuration type
0
0
0
0
0
0
1
0
02H
ECC
12
Refresh rate/type
1
0
0
0
0
0
1
0
82H
7.8µs
13
Primary SDRAM width
0
0
0
0
1
0
0
0
08H
×8
14
Error checking SDRAM width
0
0
0
0
1
0
0
0
08H
×8
15
Reserved
0
0
0
0
0
0
0
0
00H
0
0
0
0
0
1
1
0
0
0CH
4,8
0
0
0
0
0
1
0
0
04H
4
0
0
1
1
1
0
0
0
38H
3, 4, 5
16
17
18
SDRAM device attributes:
Burst length supported
SDRAM device attributes: Number of
banks on SDRAM device
SDRAM device attributes:
/CAS latency
19
Reserved
0
0
0
0
0
0
0
0
00H
0
20
DIMM type information
0
0
0
0
0
0
0
1
01H
Registered
21
SDRAM module attributes
0
0
0
0
0
0
0
0
00H
Normal
22
SDRAM device attributes: General
0
0
1
1
0
0
0
0
30H
VDD ± 0.1V
23
Minimum clock cycle time at CL = 4
-5C
0
0
1
1
1
1
0
1
3DH
3.75ns*1
0
1
0
1
0
0
0
0
50H
5.0ns*1
Maximum data access time (tAC) from
clock at CL = 4
0
-5C
1
0
1
0
0
0
0
50H
0.5ns*1
1
1
0
0
0
0
0
60H
0.6ns*1
1
0
1
0
0
0
0
50H
5.0ns*1
1
1
0
0
0
0
0
60H
0.6ns*1
-4A
24
-4A
25
26
0
Minimum clock cycle time at CL = 3
0
-5C, -4A
Maximum data access time (tAC) from
clock at CL = 3
0
-5C, -4A
Data Sheet E0402E40 (Ver. 4.0)
5
EBE51RD8ABFA
Byte No.
27
28
29
30
Function described
Minimum row precharge time (tRP)
-5C, -4A
Minimum row active to row active
delay (tRRD)
Minimum /RAS to /CAS delay (tRCD)
-5C, -4A
Minimum active to precharge time
(tRAS)
Bit7
Bit6
Bit5 Bit4
Bit3
Bit2
Bit1 Bit0
Hex value
Comments
0
0
1
1
1
1
0
0
3CH
15ns
0
0
0
1
1
1
1
0
1EH
7.5ns
0
0
1
1
1
1
0
0
3CH
15ns
0
0
1
0
1
1
0
1
2DH
45ns
31
Module rank density
1
0
0
0
0
0
0
0
80H
512M byte
32
Address and command setup time
before clock (tIS)
-5C
0
0
1
0
0
1
0
1
25H
0.25ns*1
0
0
1
1
0
1
0
1
35H
0.35ns*1
Address and command hold time after
clock (tIH)
0
-5C
0
1
1
1
0
0
0
38H
0.38ns*1
0
1
0
0
1
0
0
0
48H
0.48ns*1
0
0
0
1
0
0
0
0
10H
0.10ns*1
0
0
0
1
0
1
0
1
15H
0.15ns*1
0
0
1
0
0
0
1
1
23H
0.23ns*1
0
0
1
0
1
0
0
0
28H
0.28ns*1
-4A
33
-4A
34
Data input setup time before clock
(tDS)
-5C
-4A
35
Data input hold time after clock (tDH)
-5C
-4A
36
Write recovery time (tWR)
0
0
1
1
1
1
0
0
3CH
15ns*1
37
Internal write to read command delay
(tWTR)
-5C
0
0
0
1
1
1
1
0
1EH
7.5ns*1
0
0
1
0
1
0
0
0
28H
10ns*1
0
0
0
1
1
1
1
0
1EH
7.5ns*1
-4A
38
Internal read to precharge command
delay (tRTP)
39
Memory analysis probe characteristics 0
0
0
0
0
0
0
0
00H
TBD
40
Extension of Byte 41 and 42
0
0
0
0
0
0
0
0
00H
Undefined
0
0
1
1
1
1
0
0
3CH
60ns*1
0
1
1
0
1
0
0
1
69H
105ns*1
41
42
Active command period (tRC)
-5C, -4A
Auto refresh to active/
Auto refresh command cycle (tRFC)
43
SDRAM tCK cycle max. (tCK max.)
1
0
0
0
0
0
0
0
80H
8ns*1
44
Dout to DQS skew
-5C
0
0
0
1
1
1
1
0
1EH
0.30ns*1
0
0
1
0
0
0
1
1
23H
0.35ns*1
0
0
1
0
1
0
0
0
28H
0.40ns*1
0
0
1
0
1
1
0
1
2DH
0.45ns*1
0
0
0
0
1
1
1
1
0FH
15µs
0
0
0
0
0
0
0
0
00H
-4A
45
Data hold skew (tQHS)
-5C
-4A
46
PLL relock time
47 to 61
Data Sheet E0402E40 (Ver. 4.0)
6
EBE51RD8ABFA
Byte No.
Function described
Bit7
Bit6
Bit5 Bit4
Bit3
Bit2
Bit1 Bit0
Hex value
Comments
62
SPD Revision
0
0
0
1
0
0
0
0
10H
Rev. 1.0
63
Checksum for bytes 0 to 62
-5C
0
0
0
0
0
0
0
1
01H
1
0
0
0
0
1
0
1
85H
-4A
64 to 65
Manufacturer’s JEDEC ID code
0
1
1
1
1
1
1
1
7FH
Continuation
code
66
Manufacturer’s JEDEC ID code
1
1
1
1
1
1
1
0
FEH
Elpida Memory
67 to 71
Manufacturer’s JEDEC ID code
0
0
0
0
0
0
0
0
00H
72
Manufacturing location
×
×
×
×
×
×
×
×
××
(ASCII-8bit
code)
73
Module part number
0
1
0
0
0
1
0
1
45H
E
74
Module part number
0
1
0
0
0
0
1
0
42H
B
75
Module part number
0
1
0
0
0
1
0
1
45H
E
76
Module part number
0
0
1
1
0
1
0
1
35H
5
77
Module part number
0
0
1
1
0
0
0
1
31H
1
78
Module part number
0
1
0
1
0
0
1
0
52H
R
79
Module part number
0
1
0
0
0
1
0
0
44H
D
80
Module part number
0
0
1
1
1
0
0
0
38H
8
81
Module part number
0
1
0
0
0
0
0
1
41H
A
82
Module part number
0
1
0
0
0
0
1
0
42H
B
83
Module part number
0
1
0
0
0
1
1
0
46H
F
84
Module part number
0
1
0
0
0
0
0
1
41H
A
85
Module part number
0
0
1
0
1
1
0
1
2DH
—
86
Module part number
-5C
0
0
1
1
0
1
0
1
35H
5
0
0
1
1
0
1
0
0
34H
4
0
1
0
0
0
0
0
1
41H
A
-4A
87
Module part number
-4A
0
1
0
0
0
0
1
1
43H
C
88
Module part number
0
0
1
0
1
1
0
1
2DH
—
89
Module part number
0
1
0
0
0
1
0
1
45H
E
90
Module part number
0
0
1
0
0
0
0
0
20H
(Space)
91
Revision code
0
0
1
1
0
0
0
0
30H
Initial
92
Revision code
0
0
1
0
0
0
0
0
20H
(Space)
Year code
(BCD)
Week code
(BCD)
-5C
93
Manufacturing date
×
×
×
×
×
×
×
×
××
94
Manufacturing date
×
×
×
×
×
×
×
×
××
95 to 98
Module serial number
99 to 127
Manufacture specific data
Note: 1. These specifications are defined based on component specification, not module.
Data Sheet E0402E40 (Ver. 4.0)
7
EBE51RD8ABFA
Block Diagram
/RCS0
RS
RS
/DQS4
/DQS0
RS
RS
DQS4
DQS0
RS
/DQS9
RS
DM0/DQS9
8
RS
DQ0 to DQ7
RS
NU/ /CS DQS /DQS
/RDQS
DM/
RDQS
/DQS13
RS
DM4/DQS13
D0
8
DQ0
to DQ7
RS
DQ32 to DQ39
NU/ /CS DQS /DQS
/RDQS
DM,
RDQS
D4
DQ0
to DQ7
RS
RS
/DQS5
/DQS1
RS
RS
DQS5
DQS1
RS
/DQS10
RS
DM0/DQS10
RS
8
DQ8 to DQ15
RS
NU/ /CS DQS /DQS
/RDQS
DM/
RDQS
/DQS14
RS
DM5/DQS14
D1
8
DQ0
to DQ7
/DQS6
RS
RS
DQS6
DQS2
RS
RS
DM2/DQS11
8
RS1
DQ16 to DQ23
D5
DQ0
to DQ7
RS
RS
/DQS2
/DQS11
RS
DQ40 to DQ47
NU/ /CS DQS /DQS
/RDQS
DM/
/RDQS
RS
NU/ /CS DQS /DQS
/RDQS
DM/
RDQS
/DQS15
RS
DM0/DQS15
D2
8
DQ0
to DQ7
RS
DQ48 to DQ55
NU/ /CS DQS /DQS
/RDQS
DM/
/RDQS
D6
DQ0
to DQ7
RS
RS
/DQS7
/DQS3
RS
RS
DQS7
DQS3
RS
/DQS12
RS
DM3/DQS12
RS
8
DQ24 to DQ31
RS
NU/ /CS DQS /DQS
/RDQS
DM/
RDQS
/DQS16
RS
DM0/DQS16
D3
8
DQ0
to DQ7
RS
DQ56 to DQ63
NU/ /CSDQS /DQS
/RDQS
DM/
/RDQS
D7
DQ0
to DQ7
RS
/DQS8
RS
DQS8
RS
/DQS17
RS
DM0/DQS17
8
RS
CB0 to CB7
/CS0*2
BA0 to BA1
A0 to A13
/RAS
/CAS
CKE0
/WE
ODT0
NU/ /CS DQS /DQS
/RDQS
DM/
/RDQS
D8
SCL
SDA
U0
DQ0
to DQ7
/RCS0 -> /CS: SDRAMs D0 to D8
R
E
G
I
S
T
E
R
RS
RS
RS
RS
RS
RS
RBA0 to RBA1 -> BA0 to BA1: SDRAMs D0 to D8
/RRAS -> /RAS: SDRAMs D0 to D8
RCKE0 -> CKE: SDRAMs D0 to D8
RODT0 -> ODT0: SDRAMs D0 to D8
/RST
/PCK7
CK0
/CK0
P
L
L
/RESET
OE
VREF
VSS
Serial PD
D0 to D8
D0 to D8
D0 to D8
D0 to D8: 512M bits DDR2 SDRAM
U0: 2k bits EEPROM
RS: 22Ω
PLL: CU877
Register: SSTU32864
2. /CS0 connects to D/CS and VDD connects to /CSR on register.
/RCAS -> /CAS: SDRAMs D0 to D8
/RWE -> /WE: SDRAMs D0 to D8
/RESET
PCK7
VDD
Notes:
1. DQ wiring may be changed within a byte.
RA0 to RA13 -> A0 to A13: SDRAMs D0 to D8
RS
SDA
WP A0 A1 A2
SA0 SA1 SA2
RS
VDDSPD
Serial PD
SCL
PCK0 to PCK6, PCK8, PCK9 -> CK: SDRAMs D0 to D8
/PCK0 to /PCK6, /PCK8, /PCK9 -> /CK: SDRAMs D0 to D8
PCK7 -> CK: register
/PCK7 -> /CK: register
Data Sheet E0402E40 (Ver. 4.0)
8
EBE51RD8ABFA
Differential Clock Net Wiring (CK0, /CK0)
0ns (nominal)
SDRAM
PLL
OUT1
120Ω
120Ω
CK0
IN
Register 1
/CK0
OUT'N'
120Ω
C
Feedback in
Feedback out
C
120Ω
Notes: 1. The clock delay from the input of the PLL clock to the input of any SDRAM or register willl
be set to 0ns (nominal).
2. Input, output and feedback clock lines are terminated from line to line as shown, and not
from line to ground.
3. Only one PLL output is shown per output type. Any additional PLL outputs will be wired
in a similar manner.
4. Termination resistors for the PLL feedback path clocks are located as close to the
input pin of the PLL as possible.
Data Sheet E0402E40 (Ver. 4.0)
9
EBE51RD8ABFA
Electrical Specifications
• All voltages are referenced to VSS (GND).
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VT
–0.5 to +2.3
V
Supply voltage relative to VSS
VDD
–0.5 to +2.3
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
9
W
Operating case temperature
TC
0 to +85
°C
Storage temperature
Tstg
–55 to +100
°C
Note
1
Note: 1. DDR2 SDRAM component specification.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TC = 0 to +85°C) (DDR2 SDRAM Component Specification)
Parameter
Supply voltage
Symbol
min.
typ.
max.
Unit
Notes
4
VDD, VDDQ
1.7
1.8
1.9
V
VSS
0
0
0
V
VDDSPD
1.7
—
3.6
V
Input reference voltage
VREF
0.49 × VDDQ
0.50 × VDDQ 0.51 × VDDQ
V
1, 2
Termination voltage
VTT
VREF − 0.04
VREF
VREF + 0.04
V
3
DC input logic high
VIH (DC)
VREF + 0.125

VDDQ + 0.3V
V
DC input low
VIL (DC)
−0.3

VREF – 0.125
V
AC input logic high
VIH (AC)
VREF + 0.250


V
AC input low
VIL (AC)


VREF − 0.250
V
Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically
the value of VREF is expected to be about 0.5 × VDDQ of the transmitting device and VREF are expected
to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed ±2% VREF (DC).
3. VTT of transmitting device must track VREF of receiving device.
4. VDDQ must be equal to VDD.
Data Sheet E0402E40 (Ver. 4.0)
10
EBE51RD8ABFA
DC Characteristics 1 (TC = 0 to +85°C, VDD = 1.8V ± 0.1V, VSS = 0V)
Parameter
Operating current
(ACT-PRE)
Symbol
IDD0
Grade
-5C
-4A
max.
1480
1310
Unit
Test condition
mA
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Operating current
(ACT-READ-PRE)
IDD1
-5C
-4A
1680
1470
mA
Precharge power-down
standby current
IDD2P
-5C
-4A
580
500
mA
Precharge quiet standby
current
IDD2Q
-5C
-4A
720
610
mA
Idle standby current
IDD2N
-5C
-4A
760
660
mA
IDD3P-F
-5C
-4A
850
750
mA
IDD3P-S
-5C
-4A
720
610
mA
Active power-down
standby current
Active standby current
IDD3N
-5C
-4A
1100
990
mA
Operating current
(Burst read operating)
IDD4R
-5C
-4A
2270
1830
mA
Operating current
(Burst write operating)
IDD4W
-5C
-4A
2270
1830
mA
Data Sheet E0402E40 (Ver. 4.0)
11
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);CKE is H, /CS is H;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open;
tCK = tCK (IDD);
CKE is L;
Other control and
address bus inputs are
STABLE;
Data bus inputs are
FLOATING
Fast PDN Exit
MRS(12) = 0
Slow PDN Exit
MRS(12) = 1
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
EBE51RD8ABFA
Parameter
Auto-refresh current
Self-refresh current
Operating current
(Bank interleaving)
Symbol
Grade
-5C
-4A
IDD5
IDD6
max.
2730
2510
80
-5C
-4A
IDD7
3610
3330
Unit
Test condition
mA
tCK = tCK (IDD);
Refresh command at every tRFC (IDD) interval;
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
mA
Self Refresh Mode;
CK and /CK at 0V;
CKE ≤ 0.2V;
Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING
mA
all bank interleaving reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = tRCD (IDD) −1 × tCK (IDD);
tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD),
tRCD = 1 × tCK (IDD);
CKE is H, CS is H between valid commands;
Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4W;
Notes: 1.
2.
3.
4.
IDD specifications are tested after the device is properly initialized.
Input slew rate is specified by AC Input Test Condition.
IDD parameters are specified with ODT disabled.
Data bus consists of DQ, DM, DQS, /DQS, RDQS, /RDQS, LDQS, /LDQS, UDQS, and /UDQS. IDD
values must be met with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
L is defined as VIN ≤ VIL (AC) (max.)
H is defined as VIN ≥ VIH (AC) (min.)
STABLE is defined as inputs stable at an H or L level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between H and L every other clock cycle (once per two clocks) for address and control
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals
not including masks or strobes.
6. Refer to AC Timing for IDD Test Conditions.
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR2-533
DDR2-400
Parameter
4-4-4
3-3-3
Unit
CL(IDD)
4
3
tCK
tRCD(IDD)
15
15
ns
tRC(IDD)
55
55
ns
tRRD(IDD)
7.5
7.5
ns
tCK(IDD)
3.75
5
ns
tRAS(min.)(IDD)
40
40
ns
tRAS(max.)(IDD)
70000
70000
ns
tRP(IDD)
15
15
ns
tRFC(IDD)
105
105
ns
Data Sheet E0402E40 (Ver. 4.0)
12
EBE51RD8ABFA
DC Characteristics 2 (TC = 0 to +85°C, VDD, VDDQ = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
Value
Unit
Notes
Input leakage current
Output leakage current
ILI
2
µA
VDD ≥ VIN ≥ VSS
ILO
5
µA
VDDQ ≥ VOUT ≥ VSS
VTT + 0.603
V
5
VTT − 0.603
V
5
Minimum required output pull-up under AC
VOH
test load
Maximum required output pull-down under
VOL
AC test load
Output timing measurement reference level VOTR
0.5 × VDDQ
V
1
Output minimum sink DC current
IOL
+13.4
mA
3, 4, 5
Output minimum source DC current
IOH
−13.4
mA
2, 4, 5
Notes: 1.
2.
3.
4.
5.
The VDDQ of the device under test is referenced.
VDDQ = 1.7V; VOUT = 1.42V.
VDDQ = 1.7V; VOUT = 0.28V.
The DC value of VREF applied to the receiving device is expected to be set to VTT.
After OCD calibration to 18Ω at TC = 25°C, VDD = VDDQ = 1.8V.
DC Characteristics 3 (TC = 0 to +85°°C, VDD, VDDQ = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
min.
max.
Unit
Notes
AC differential input voltage
VID (AC)
0.5
VDDQ + 0.6
V
1, 2
AC differential cross point voltage
VIX (AC)
0.5 × VDDQ − 0.175
0.5 × VDDQ + 0.175
V
2
AC differential cross point voltage
VOX (AC)
0.5 × VDDQ − 0.125
0.5 × VDDQ + 0.125
V
3
Notes: 1. VID(AC) specifies the input differential voltage |VTR -VCP| required for switching, where VTR is the true
input signal (such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as
/CK, /DQS, /LDQS or /UDQS). The minimum value is equal to VIH(AC) − VIL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 × VDDQ of the transmitting device and VIX(AC)
is expected to track variations in VDDQ . VIX(AC) indicates the voltage at which differential input signals
must cross.
3. The typical value of VOX(AC) is expected to be about 0.5 × VDDQ of the transmitting device and
VOX(AC) is expected to track variations in VDDQ . VOX(AC) indicates the voltage at which differential
output signals must cross.
VDDQ
VTR
Crossing point
VID
VIX or VOX
VCP
VSSQ
1, 2
Differential Signal Levels*
Data Sheet E0402E40 (Ver. 4.0)
13
EBE51RD8ABFA
ODT DC Electrical Characteristics (TC = 0 to +85°°C, VDD, VDDQ = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
min.
typ.
max.
Unit
Note
Rtt effective impedance value for EMRS (A6, A2) = 0, 1; 75 Ω
Rtt1(eff)
60
75
90
Ω
1
Rtt effective impedance value for EMRS (A6, A2) = 1, 0; 150 Ω
Rtt2(eff)
120
150
180
Ω
1
Deviation of VM with respect to VDDQ/2
∆VM
−3.75

+3.75
%
1
Note: 1. Test condition for Rtt measurements.
Measurement Definition for Rtt(eff)
Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively.
VIH(AC), and VDDQ values defined in SSTL_18.
Rtt(eff) =
VIH(AC) − VIL(AC)
I(VIH(AC)) − I(VIL(AC))
Measurement Definition for VM
Measure voltage (VM) at test pin (midpoint) with no load.
∆VM =
2 × VM
VDDQ
− 1 × 100%
OCD Default Characteristics (TC = 0 to +85°°C, VDD, VDDQ = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
min.
typ.
max.
Unit
Notes
Output impedance
12.6
18
23.4
Ω
1
Pull-up and pull-down mismatch
0

4
Ω
1, 2
Output slew rate
1.5

4.5
V/ns
3, 4
Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT−VDDQ)/IOH must be less than 23.4Ω for values of VOUT between VDDQ and VDDQ−280mV.
Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/IOL must be less than 23.4Ω for values of VOUT between 0V and 280mV.
2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and
voltage.
3. Slew rate measured from VIL(AC) to VIH(AC).
4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate
as measured from AC to AC. This is guaranteed by design and characterization.
Pin Capacitance (TA = 25°C, VDD = 1.8V ± 0.1V)
Parameter
Symbol
Pins
min.
max.
Unit
Notes
Input capacitance
CI1
Address, /RAS, /CAS,
/WE, /CS, CKE, ODT
2.5
3.5
pF
1
Input capacitance
CI2
CK, /CK
2
3
pF
2
Data and DQS input/output
capacitance
CO
DQ, DQS, /DQS, DM, CB
3
4
pF
3
Notes: 1. Register component specification.
2. PLL component specification.
3. DDR2 SDRAM component specification.
Data Sheet E0402E40 (Ver. 4.0)
14
EBE51RD8ABFA
AC Characteristics (TC = 0 to +85°°C, VDD, VDDQ = 1.8V ± 0.1V, VSS = 0V)
(DDR2 SDRAM Component Specification)
Frequency (Mbps)
-5C
-4A
533
400
Parameter
Symbol
min.
max.
min.
max.
Unit
/CAS latency
CL
4
5
3
5
tCK
Active to read or write command delay
tRCD
15

15

ns
Precharge command period
tRP
15

15

ns
Active to active/auto refresh command
time
tRC
55

55

ns
DQ output access time from CK, /CK
tAC
−500
+500
−600
+600
ps
DQS output access time from CK, /CK
tDQSCK −450
+450
−500
+500
ps
CK high-level width
tCH
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
tCK
tHP
min.
(tCL, tCH)

min.
(tCL, tCH)

ps
CK half period
Notes
Clock cycle time
tCK
3750
8000
5000
8000
ps
DQ and DM input hold time
tDH
225

275

ps
5
DQ and DM input setup time
tDS
100

150

ps
4
tIPW
0.6

0.6

tCK
tDIPW
0.35

0.35

tCK
tHZ

tAC max.

tAC max.
ps
tLZ
tAC min.
tAC max.
tAC min.
tAC max.
ps
tDQSQ

300

350
ps
Control and Address input pulse width
for each input
DQ and DM input pulse width for each
input
Data-out high-impedance time from
CK,/CK
Data-out low-impedance time from
CK,/CK
DQS-DQ skew for DQS and associated
DQ signals
DQ hold skew factor
tQHS

400

450
ps
DQ/DQS output hold time from DQS
tQH
tHP – tQHS

tHP – tQHS

ps
Write command to first DQS latching
transition
tDQSS
WL − 0.25
WL + 0.25
WL − 0.25
WL + 0.25
tCK
DQS input high pulse width
tDQSH
0.35

0.35

tCK
DQS input low pulse width
tDQSL
0.35

0.35

tCK
DQS falling edge to CK setup time
tDSS
0.2

0.2

tCK
DQS falling edge hold time from CK
tDSH
0.2

0.2

tCK
Mode register set command cycle time
tMRD
2

2

tCK
Write preamble setup time
tWPRES 0

0

tCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
tCK
Write preamble
tWPRE
0.25

0.25

tCK
Address and control input hold time
tIH
375

475

ps
5
Address and control input setup time
tIS
250

350

ps
4
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
Active to precharge command
tRAS
40
70000
40
70000
ns
Active to auto-precharge delay
tRAP
tRCD min.

tRCD min.

ns
Data Sheet E0402E40 (Ver. 4.0)
15
EBE51RD8ABFA
Frequency (Mbps)
-5C
-4A
533
400
Parameter
Symbol
min.
max.
min.
max.
Unit
Active bank A to active bank B
command period
tRRD
7.5

7.5

ns
Write recovery time
Notes
tWR
15

15

ns
Auto precharge write recovery +
precharge time
tDAL
(tWR/tCK)+
(tRP/tCK)

(tWR/tCK)+
(tRP/tCK)

tCK
Internal write to read command delay
tWTR
7.5

10

ns
Internal read to precharge command
delay
tRTP
7.5

7.5

ns
Exit self refresh to a non-read command tXSNR
tRFC + 10

tRFC + 10

ns
Exit self refresh to a read command
tXSRD
200

200

tCK
tXP
2

2

tCK
tXARD
2

2

tCK
3
tXARDS 6 − AL

6 − AL

tCK
2, 3
tCKE
3

3

tCK
Output impedance test driver delay
tOIT
0
12
0
12
ns
Auto refresh to active/auto refresh
command time
tRFC
105

105

ns
Average periodic refresh interval
tREFI

7.8

7.8
µs
Minimum time clocks remains ON after
CKE asynchronously drops low
tDELAY tIS + tCK + tIH 
Exit precharge power down to any nonread command
Exit active power down to read
command
Exit active power down to read
command
(slow exit/low power mode)
CKE minimum pulse width (high and
low pulse width)
tIS + tCK + tIH 
1
ns
Notes: 1.
2.
3.
4.
For each of the terms above, if not already an integer, round to the next higher integer.
AL: Additive Latency.
MRS A12 bit defines which active power down exit timing to be applied.
The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the
VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test.
5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the
VIH(DC) level for a rising signal and VIL(DC) for a falling signal applied to the device under test.
DQS
CK
/DQS
/CK
tIS
tDS
tDH
tDS
tIH
tIS
tIH
tDH
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VREF
VIL (DC)(max.)
VIL (AC)(max.)
VSS
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VREF
VIL (DC)(max.)
VIL (AC)(max.)
VSS
Input Waveform Timing 1 (tDS, tDH)
Input Waveform Timing 2 (tIS, tIH)
Data Sheet E0402E40 (Ver. 4.0)
16
EBE51RD8ABFA
ODT AC Electrical Characteristics (DDR2 SDRAM Component Specification)
Parameter
Symbol
min.
max.
Unit
ODT turn-on delay
tAOND
2
2
tCK
ODT turn-on
tAON
tAC(min)
tAC(max) + 1000
ps
ODT turn-on (power down mode)
tAONPD
tAC(min) + 2000
2tCK + tAC(max) + 1000
ps
ODT turn-off delay
tAOFD
2.5
2.5
tCK
ODT turn-off
tAOF
tAC(min)
tAC(max) + 600
ps
ODT turn-off (power down mode)
tAOFPD
tAC(min) + 2000
2.5tCK + tAC(max) + 1000
ps
ODT to power down entry latency
tANPD
3
3
tCK
ODT power down exit latency
tAXPD
8
8
tCK
Notes
1
2
Notes: 1. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on.
ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND.
2. ODT turn off time min is when the device starts to turn off ODT resistance.
ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD.
AC Input Test Conditions
Parameter
Symbol
Value
Unit
Notes
Input reference voltage
VREF
0.5 × VDDQ
V
1
Input signal maximum peak to peak swing
VSWING(max.)
1.0
V
1
Input signal maximum slew rate
SLEW
1.0
V/ns
2, 3
Notes: 1. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the
device under test.
2. The input signal minimum slew rate is to be maintained over the range from VIL(DC) (max.) to VIH(AC)
(min.) for rising edges and the range from VIH(DC) (min.) to VIL(AC) (max.) for falling edges as shown in
the below figure.
3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive
transitions and VIH(AC) to VIL(AC) on the negative transitions.
Start of rising edge input timing
Start of falling edge input timing
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VSWING(max.)
VREF
VIL (DC)(max.)
VIL (AC)(max.)
Falling slew =
VSS
∆TR
∆TF
VIH (DC)(min.) − VIL (AC)(max.)
Rising slew =
∆TF
VIH (AC) min. − VIL (DC)(max.)
AC Input Test Signal Wave forms
Measurement point
DQ
VTT
RT =25 Ω
Output Load
Data Sheet E0402E40 (Ver. 4.0)
17
∆TR
EBE51RD8ABFA
Pin Functions
CK, /CK (input pin)
The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross
point of the CK rising edge and the VREF level. When a read operation, DQSs and DQs are referred to the cross
point of the CK and the /CK. When a write operation, DQs are referred to the cross point of the DQS and the VREF
level. DQSs for write operation are referred to the cross point of the CK and the /CK.
/CS (input pin)
When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal
operations (bank active, burst operations, etc.) are held.
/RAS, /CAS, and /WE (input pins)
These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels.
See “Command operation”.
A0 to A13 (input pins)
Row address (AX0 to AX13) is determined by the A0 to the A13 level at the cross point of the CK rising edge and the
VREF level in a bank active command cycle. Column address (AY0 to AY9) is loaded via the A0 to the A9 at the
cross point of the CK rising edge and the VREF level in a read or a write command cycle. This column address
becomes the starting address of a burst operation.
A10 (AP) (input pin)
A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If
A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge
command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = high when read or write
command, auto-precharge function is enabled. While A10 = low, auto-precharge function is disabled.
BA0, BA1 (input pin)
BA0, BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See
Bank Select Signal Table)
[Bank Select Signal Table]
BA0
BA1
Bank 0
L
L
Bank 1
H
L
Bank 2
L
H
Bank 3
H
H
Remark: H: VIH. L: VIL.
CKE (input pin)
CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the
CKE is driven low and exited when it resumes to high.
The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge
and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with proper hold
time tIH.
DQ, CB (input and output pins)
Data are input to and output from these pins.
DQS (input and output pin)
DQS and /DQS provide the read data strobes (as output) and the write data strobes (as input).
Data Sheet E0402E40 (Ver. 4.0)
18
EBE51RD8ABFA
DM (input pins)
DM is the reference signal of the data input mask function. DMs are sampled at the cross point of DQS and /DQS.
DM function will be disabled when RDQS (DQS9 toDQS17 and /DQS9 to /DQS17) function is enabled by EMRS.
VDD (power supply pins)
1.8V is applied. (VDD is for the internal circuit.)
VDDSPD (power supply pin)
1.8V is applied (For serial EEPROM).
VSS (power supply pin)
Ground is connected.
/RESET(input pin)
LVCMOS reset input. When /RESET is Low, all registers are reset.
Detailed Operation Part and Timing Waveforms
Refer to the EDE5104ABSE, EDE5108ABSE, EDE5116ABSE datasheet (E0323E).
component CL + 1 for registered type.
Data Sheet E0402E40 (Ver. 4.0)
19
DIMM /CAS latency =
EBE51RD8ABFA
Physical Outline
Unit: mm
4.00 max
0.5 min
4.00 min
(DATUM -A-)
Component area
(Front)
1
120
B
A
63.00
1.27 ± 0.10
55.00
4.00
Component area
(Back)
FULL R
30.00
240
17.80
121
10.00
133.35
3.00
Detail B
(DATUM -A-)
1.00
4.00
0.20 ± 0.15
2.50 ± 0.20
Detail A
2.50
FULL R
0.80 ± 0.05
3.80
5.00
1.50 ± 0.10
ECA-TS2-0093-01
Data Sheet E0402E40 (Ver. 4.0)
20
EBE51RD8ABFA
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as
the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on
these components to prevent damaging them.
In particular, do not push module cover or drop the modules in order to protect from mechanical defects,
which would be electrical defects.
When re-packing memory modules, be sure the modules are not touching each other.
Modules in contact with other modules may cause excessive mechanical stress, which may damage the
modules.
MDE0202
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Data Sheet E0402E40 (Ver. 4.0)
21
EBE51RD8ABFA
µBGA is a registered trademark of Tessera, Inc.
All other trademarks are the intellectual property of their respective owners.
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0107
Data Sheet E0402E40 (Ver. 4.0)
22
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