NIEC EC21QS09 Schottky barrier diode Datasheet

SBD
Type
:
EC21QS09
OUTLINE DRAWING
FEATURES
FEATURES
* Miniature Size,Surface Mount Device
* Low Forward Voltage Drop
* Low Power Loss,High Efficiency
* High Surge Capability
* 0 Volts through 100Volts Types Available
* ackaged in 12mm Tape and Reel
* Not Rolling During Assembly
Maximum Ratings
Approx Net Weight:0.06g
Rating
Repetitive Peak Reverse Voltage
Symbol
EC21QS09
Unit
VRRM
90
V
Average Rectified Output Current
Io
RMS Forward Current
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range
Storage Temperature Range
Tjw
Tstg
1.3
2.0
50
Ta=29 °C *1
Tl=107 °C
50Hz Half Sine
Wave Resistive Load
A
A
3.14
50Hz Half Sine Wave,1cycle
Non-repetitive
-40 to +150
-40 to +150
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Peak Reverse Current
IRM
Tj= 25°C, VRM= VRRM
Peak Forward Voltage
VFM Tj= 25°C, IFM= 2.0A
Thermal Junction to Ambient Rth(j-a)
Alumina Substrate Mounted *1
Resistance Junction to Lead
Rth(j-l)
*1 Alumina Substrate Mounted (Soldering Lands=2x2mm,Both Sides)
(Tl: Lead Temperature)
Min. Typ. Max.
-
-
1
0.85
108
23
Unit
mA
V
°C /W
EC21QS_ OUTLINE DRAWING (Dimensions in mm)
FORWARD CURRENT VS. VOLTAGE
EC21QS09
INSTANTANEOUS FORWARD CURRENT (A)
10
5
2
Tj=25°C
Tj=150°C
1
0.5
0.2
0
0.2
0.4
0.6
0.8
1.0
1.2
INSTANTANEOUS FORWARD VOLTAGE (V)
0°
θ
180°
AVERAGE FORWARD POWER DISSIPATION
CONDUCTION ANGLE
EC21QS09
AVERAGE FORWARD POWER DISSIPATION (W)
2.4
D.C.
2.0
RECT 180°
1.6
HALF SINE WAVE
RECT 120°
1.2
RECT 60°
0.8
0.4
0
0
0.5
1.0
1.5
2.0
AVERAGE FORWARD CURRENT (A)
2.5
3.0
3.5
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
Tj= 150 °C
EC21QS09
PEAK REVERSE CURRENT (mA)
10
5
2
0
20
40
60
80
100
PEAK REVERSE VOLTAGE (V)
AVERAGE REVERSE POWER DISSIPATION
EC21QS09
AVERAGE REVERSE POWER DISSIPATION (W)
0.7
D.C.
0.6
RECT 300°
0.5
RECT 240°
0.4
RECT 180°
0.3
HALF SINE WAVE
0.2
0.1
0
0
20
40
60
REVERSE VOLTAGE (V)
80
100
0°
θ
180°
AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
CONDUCTION ANGLE
A lum ina S ubs tr ate Mo unted(S olde ring La nd= 2×2 mm ),V RM =9 0V
EC21QS09
2.4
AVERAGE FORWARD CURRENT (A)
D.C.
2.0
1.6
RECT 180°.
RECT 120°.
1.2
HALF SINE WAVE.
RECT 60°.
0.8
0.4
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
0°
θ
180°
AVERAGE FORWARD CURRENT VS. LEAD TEMPERATURE
CONDUCTION ANGLE
V RM =90 V
EC21QS09
3.5
AVERAGE FORWARD CURRENT (A)
D.C.
3.0
2.5
RECT 180°
HALF SINE WAVE
2.0
RECT 120°
1.5
RECT 60°
1.0
0.5
0
0
25
50
75
LEAD TEMPERATURE (°C)
100
125
150
SURGE CURRENT RATINGS
f=50Hz,Half Sine Wave,Non-Repetitive,No Load
EC21QS09
SURGE FORWARD CURRENT (A)
60
50
40
30
20
10
I FSM
0.02s
0
0.02
0.05
0.1
0.2
0.5
1
2
TIME (s)
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue
EC21QS09
JUNCTION CAPACITANCE (pF)
200
100
50
20
10
0.5
1
2
5
10
REVERSE VOLTAGE (V)
20
50
100
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