Sanyo EC4305C P-channel silicon mosfet general-purpose switching device application Datasheet

EC4305C
Ordering number : ENA0874
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
EC4305C
General-Purpose Switching Device
Applications
Features
•
•
4V drive.
Halogen free compliance (UL94 HB).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
VDSS
VGSS
--30
±20
V
V
ID
--200
mA
mA
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
--800
Allowable Power Dissipation
PD
Mounted on a glass-epoxy printed circuit board (145✕80✕1.6mm)
0.15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Symbol
V(BR)DSS
IDSS
Conditions
ID=--1mA, VGS=0V
Ratings
min
typ
Unit
max
--30
V
VDS=--30V, VGS=0V
--1
µA
±10
µA
IGSS
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--100µA
--1.2
⏐yfs⏐
RDS(on)1
VDS=--10V, ID=--100mA
150
ID=--100mA, VGS=--10V
1.4
1.9
Ω
RDS(on)2
Ciss
ID=--50mA, VGS=--4V
2.8
4.0
Ω
VDS=--10V, f=1MHz
22
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
6.0
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
3.5
pF
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
--2.6
250
V
mS
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1407PE TI IM TC-00001005 No. A0874-1/4
EC4305C
Continued from preceding page.
Parameter
Symbol
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Ratings
Conditions
min
typ
Unit
max
td(on)
tr
See specified Test Circuit.
34
ns
See specified Test Circuit.
59
ns
td(off)
tf
See specified Test Circuit.
435
ns
See specified Test Circuit.
250
ns
1.6
nC
0.5
nC
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--200mA
VDS=--10V, VGS=--10V, ID=--200mA
VDS=--10V, VGS=--10V, ID=--200mA
Diode Forward Voltage
VSD
IS=--200mA, VGS=0V
Package Dimensions
0.1
--0.86
Type No. Indication
nC
--1.2
V
Electrical Connection
unit : mm (typ)
7036-001
Polarity mark (Top)
Top View
AL
0.8
Gate
Drain
3
4
1.0
Top view
Source
*Electrodes : on the bottom
Top view
Polarity mark (Top)
2
1
Polarity Discriminating Mark
0.6
Drain
Gate
Source
0.5
0.3
0.2
2
4
3
1 : Gate
2 : Source
3 : Drain
4 : Drain
0.6
1
SANYO : ECSP1008-4
Bottom View
Switching Time Test Circuit
VDD= --15V
VIN
0V
--10V
ID= --100mA
RL=150Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
Rg
G
P.G
EC4305C
50Ω
S
Rg=5kΩ
No. A0874-2/4
EC4305C
ID -- VDS
--160
--140
--120
--2.5V
--100
--80
--60
--120
--100
--80
--60
--20
--25
°C
VGS= --2.0V
--20
Ta=
7
--40
--40
--2.0
--2.5
0
0
--0.1
0
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
0
--1.0
--1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
8
7
6
5
--100mA
4
ID= --50mA
2
--3.0
--3.5
--4.0
IT11210
RDS(on) -- Ta
6
9
--1.5
Gate-to-Source Voltage, VGS -- V
Ta=25°C
3
--0.5
IT11209
RDS(on) -- VGS
10
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
--140
2
5°C 5°C
--15
.0
Drain Current, ID -- mA
--160
VDS= --10V
--180
Drain Current, ID -- mA
V -10.0V
--180
ID -- VGS
--200
--6. -8.0V
0V
--4
.0V
--200
5
4
A
--50m
, I D=
--4V
3
=
VGS
2
mA
= --100
--10V, I D
=
V GS
1
1
0
--8
--10
--12
--14
Gate-to-Source Voltage, VGS -- V
5
⏐yfs⏐ -- ID
2
C
5°
100
°
75
7
25
C
°C
5
3
2
3
5 7 --0.01
2
3
5 7 --0.1
2
3
Drain Current, ID -- A
5 7 --1.0
IT11213
40
60
80
100
120
140
160
IT11212
VGS=0V
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.0001
--0.2
td(off)
2
100
7
--1.0
--1.2
IT11214
f=1MHz
Ciss
tf
3
--0.8
3
Ciss, Coss, Crss -- pF
5
--0.6
Ciss, Coss, Crss -- VDS
5
VDD= --15V
VGS= --10V
7
--0.4
Diode Forward Voltage, VSD -- V
SW Time -- ID
1000
Switching Time, SW Time -- ns
20
--0.001
7
5
3
2
2
10
--0.001
0
IS -- VSD
--1.0
7
5
3
2
3
--2
--20
Ambient Temperature, Ta -- °C
VDS= --10V
=
Ta
--40
IT11211
Source Current, IS -- A
Forward Transfer Admittance, ⏐yfs⏐ -- mS
7
0
--60
--16
C
--6
--25°
--4
25°C
--2
Ta=
75°
C
0
tr
2
10
7
Coss
5
Crss
3
5
td(on)
2
3
2
--0.01
1.0
2
3
5
7
--0.1
2
Drain Current, ID -- A
3
5
7
IT11215
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT11216
No. A0874-3/4
EC4305C
VGS -- Qg
--10
Allowable Power Dissipation, PD -- W
Gate-to-Source Voltage, VGS -- V
--9
PD -- Ta
0.20
VDS= --10V
ID= --200mA
--8
--7
--6
--5
--4
--3
--2
--1
Mounted on a glass-epoxy printed
circuit board (145✕80✕1.6mm)
0.15
0.10
0.05
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
IT11217
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT12737
Note on usage : Since the EC4305C is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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This catalog provides information as of November, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0874-4/4
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