TriQuint ECG006C-G Ingap hbt gain block Datasheet

ECG006C
InGaP HBT Gain Block
Product Features
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DC – 5.5 GHz
15 dB Gain @ 1 GHz
+15.5 dBm P1dB @ 1 GHz
+32 dBm OIP3 @ 1 GHz
3.7 dB Noise Figure
Internally matched to 50 Ω
Robust 1000V ESD, Class 1C
Lead-free/RoHS-compliant SOT86 Package
Mobile Infrastructure
CATV / FTTX
WLAN / ISM
RFID
WiMAX / WiBro
The ECG006C is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 1000 MHz, the ECG006C typically provides
15 dB of gain, +32 dBm Output IP3, and +15.5 dBm P1dB.
GND
4
RF In
RF Out
1
The ECG006C consists of a Darlington-pair amplifier using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation. The device is
ideal for wireless applications and is available in low-cost,
surface-mountable plastic lead-free/RoHS-compliant SOT86 packages. All devices are 100% RF and DC tested.
Specifications (1)
Parameter
Functional Diagram
3
2
GND
Function
Input
Output/Bias
Ground
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the ECG006C will work for other various applications
within the DC to 5.5 GHz frequency range such as CATV
and mobile wireless.
Applications
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Product Description
Pin No.
1
3
2, 4
Typical Performance (1)
Units
Min
MHz
MHz
dB
dBm
dBm
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
DC
Operational Bandwidth
Test Frequency
Gain
Output P1dB
Output IP3 (2)
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
Device Voltage
Device Current
12.8
+12
3.5
Typ
1000
15
+15.5
+32
2000
14.5
18
14
+15
+32
4.0
3.9
45
Max
Parameter
Units
5500
Frequency
S21
S11
S22
Output P1dB
Output IP3 (2)
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
16.2
Typical
500
15.2
-14
-12
+15.8
+32
3.7
900
15
-14
-12.5
+15.4
+32
3.7
1900
14.5
-17
-14
+15
+30
3.7
2140
14.4
-18
-14.5
+15
+30
3.7
4.3
1. Test conditions unless otherwise noted: 25º C, Supply Voltage = +5 V, Rbias = 24.3 Ω, 50 Ω System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
Device Current
RF Input Power (continuous)
Thermal Resistance
Junction Temperature
-55 to +150 °C
150 mA
+12 dBm
233 °C/W
+160 °C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
ECG006C-G
InGaP HBT Gain Block
ECG006C-PCB
700 – 2400 MHz Fully Assembled Eval. Board
(lead-free/RoHS-compliant SOT-86 package)
Standard tape / reel size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 1 of 4 February 2009
ECG006C
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 24.3 Ω, Icc = 45 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
15.3
-14
-12
+15.8
+31
3.8
500
15.2
-14
-12
+15.4
+31.5
3.7
900
15.1
-14
-12.5
+15.2
+32
3.6
1900
14.5
-17
-14
+15.0
+30
3.6
2140
14.4
-18
-14.5
+14.9
+30
3.6
2400
14.2
-20
-15
+14.6
+29.6
3.6
3500
13.0
-17
-15
+14
5800
10.2
-13
-9.5
1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = +3.9 V, Rbias = 24.3 Ω, Icc = 45 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
S11, S22 vs. Frequency
18
0
16
-5
Vde vs. Icc
90
14
12
10
-10
S22
-15
-40C
S11
+85C
2500
3000
0
4
30
3.5
25
15
500
2
3
4
Frequency (GHz)
5
1000
-40°C
1500
2000
Frequency (MHz)
30
0
3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.40
6
Vde (V)
P1dB vs. Frequency
18
16
3
2.5
20
+25°C
+25C
40
Noise Figure vs. Frequency
35
NF (dB)
OIP3 (dBm)
OIP3 vs. Frequency
1
P1dB (dBm)
1500
2000
Frequency (MHz)
50
10
-25
1000
60
20
-20
+25C
8
500
70
Icc (mA)
S11, S22 (dB)
Gain
80
14
12
10
+85°C
2500
3000
2
500
+25°C
1000
1500
2000
8
500
1000
Frequency (MHz)
-40°C
+85°C
1500
2000
Frequency (MHz)
2500
3000
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 2 of 4 February 2009
ECG006C
InGaP HBT Gain Block
Recommended Application Circuit
Vcc
Icc = 45 mA
ECG006C-PCB
R4
Bias
Resistor
C4
Bypass
Capacitor
C3
0.018 µF
L1
RF Choke
RF IN
RF OUT
ECG006
C2
Blocking
Capacitor
C1
Blocking
Capacitor
Reference
Designator
L1
C1, C2, C4
Recommended Component Values
Frequency (MHz)
500
900
1900
2200
220 nH
68 nH
27 nH
22 nH
1000 pF
100 pF
68 pF
68 pF
50
820 nH
.018 µF
2500
18 nH
56 pF
Recommended Bias Resistor Values
Supply
R1 value
Size
Voltage
5V
24.4 ohms
0805
6V
46.7 ohms
0805
8V
91 ohms
1210
9V
113 ohms
1210
10 V
136 ohms
2010
12 V
180 ohms
2010
3500
15 nH
39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig.
L1
C1, C2
C3
C4
R4
Value / Type
39 nH wirewound inductor
56 pF chip capacitor
0.018 µF chip capacitor
Do Not Place
24.3Ω 1% tolerance
Size
0603
0603
0603
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +5 V. A
1% tolerance resistor is recommended.
0805
Typical Device S-Parameters
S-Parameters (Vdevice = +3.9 V, ICC = 45 mA, T = 25°C, calibrated to device leads)
Freq (MHz)
50
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-13.66
-13.64
-14.11
-15.20
-17.86
-20.46
-18.86
-17.20
-16.45
-17.31
-16.22
-13.68
-11.01
-1.22
-13.39
-23.99
-35.45
-52.47
-93.43
-135.97
-158.47
-171.80
166.84
136.42
110.91
97.79
15.31
15.23
15.01
14.72
14.50
14.06
13.53
12.99
12.38
11.76
11.25
10.56
9.95
178.47
164.32
149.00
134.06
119.89
105.18
91.27
77.75
65.03
52.68
40.65
28.09
17.28
-18.67
-18.59
-18.38
-17.99
-17.52
-17.12
-16.59
-16.21
-15.93
-15.73
-15.52
-15.42
-15.43
-0.33
0.29
0.78
0.29
-0.93
-3.33
-6.24
-10.91
-15.16
-19.74
-24.35
-29.98
-34.96
-12.25
-12.33
-12.52
-13.08
-14.31
-15.20
-15.01
-14.89
-14.50
-13.75
-12.08
-10.21
-8.73
-1.92
-20.62
-41.41
-62.51
-82.78
-99.71
-124.98
-157.99
170.24
147.52
133.59
119.31
106.39
Device S-parameters are available for download from the website at: http://www.TriQuint.com
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 3 of 4 February 2009
ECG006C
InGaP HBT Gain Block
Mechanical Information
This package is lead-free/Green/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with
both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with a two-digit
numeric lot code (shown as “XX”) followed with
an “I” designator on the top surface of the package.
Tape and reel specifications for this part are located
on the website in the “Application Notes” section.
MSL / ESD Rating
ESD Rating:
Value:
Test:
Standard:
Class 1A
Passes between 250 and 500V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260 °C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
Land Pattern
1. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a
final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to
ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
4. Do not put solder mask on the backside of the PC board in the region
where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 4 of 4 February 2009
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