Sanyo ECH8310-TL-H General-purpose switching device application Datasheet

ECH8310
Ordering number : ENA1430A
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8310
General-Purpose Switching Device
Applications
Features
•
•
•
4V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm)
Unit
--30
V
±20
V
--9
A
--60
A
1.5
W
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-002
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8310-TL-H
Top View
Packing Type : TL
0.25
2.9
Marking
0.15
8
5
JM
4
1
0.65
0.9
0.25
2.3
Lot No.
TL
0.3
Electrical Connection
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
0.07
2.8
0 t o 0.02
Bot t om View
SANYO : ECH8
8
7
6
5
1
2
3
4
http://semicon.sanyo.com/en/network
60612 TKIM/O1409PE TK IM TC-00002092 No. A1430-1/7
ECH8310
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Conditions
Ratings
min
typ
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
--30
VDS=--10V, ID=--1mA
VDS=--10V, ID=--4.5A
--1.2
Unit
max
V
--1
μA
±10
μA
--2.6
12
ID=--4.5A, VGS=--10V
ID=--2A, VGS=--4.5V
ID=--2A, VGS=--4.0V
V
S
9
13
17
mΩ
12
20
28
mΩ
23
32.5
mΩ
13.5
1400
pF
350
pF
Crss
250
pF
Turn-ON Delay Time
td(on)
10
ns
Rise Time
tr
45
ns
Turn-OFF Delay Time
td(off)
134
ns
Fall Time
tf
87
ns
Total Gate Charge
Qg
28
nC
Gate-to-Source Charge
Qgs
4
nC
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--9A
6
IS=--9A, VGS=0V
--0.8
nC
--1.2
V
Switching Time Test Circuit
0V
--10V
VDD= --15V
VIN
ID= --4.5A
RL=3.3Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ECH8310
P.G
50Ω
S
Ordering Information
Device
ECH8310-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1430-2/7
ECH8310
ID -- VDS
--4
--3
--5
--4
--3
--2
--2
--1
--1
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
80
--0.9
0
--1.0
--25°C
--5
--6
25°
C
2.5V
V GS= --
Ta=7
5°C
--6
Drain Current, ID -- A
--7
--6.0
V
Drain Current, ID -- A
--7
VDS= --10V
--8
--4.5
--8
ID -- VGS
--9
--4.0
V
V --3.5
V
--10.0V--8.0V
--9
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
Gate-to-Source Voltage, VGS -- V
IT15075
RDS(on) -- Ta
40
--3.5
IT14478
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
40
30
20
10
0
0
--2
--4
--6
--8
--10
--12
--14
Gate-to-Source Voltage, VGS -- V
Ta
2
°
25
1.0
7
5
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
3
C
75°
C
3
2
0.1
7
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
5 7 --10
2
0
20
40
60
80
100
120
IS -- VSD
140
160
IT14480
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Ciss, Coss, Crss -- VDS
--0.9
--1.0
IT14482
f=1MHz
3
7
5
3
tr
td(on)
10
--20
VGS=0V
5
tf
2
--40
Diode Forward Voltage, VSD -- V
VDD= --15V
VGS= --10V
td(off)
100
5
--0.01
7
5
3
2
--0.001
--0.2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
2
10
IT14481
SW Time -- ID
3
15
Ambient Temperature, Ta -- °C
2
°C
-25
=
20
2
3
A
.0
= --2
, ID
V
5
.
= --4
VGS
4.5A
I D= -,
V
0
.
= --10
VGS
=
VGS
0
--60
--16
VDS= --10V
10
7
5
25
IT14479
| yfs | -- ID
5
2.0A
= -, ID
V
0
.
--4
--25
°C
50
30
C
--4.5A
25°
ID= --2A
60
35
Ta=
75°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
70
2
Ciss
1000
7
5
Coss
3
Crss
2
7
5
--0.1
2
3
5
7 --1.0
2
3
Drain Current, ID -- A
5
7 --10
2
IT14483
100
0
--2
--4
--6
--8
--10
--12
--14
--16
Drain-to-Source Voltage, VDS -- V
--18
--20
IT14484
No. A1430-3/7
ECH8310
VGS -- Qg
VDS= --15V
ID= --9A
--8
--6
--4
--2
0
0
5
10
15
20
25
Total Gate Charge, Qg -- nC
PD -- Ta
Allowable Power Dissipation, PD -- W
1.8
ASO
2
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--10
30
IT14485
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
IDP= --60A
PW≤10μs
1m
s
10
ID= --9A
DC
ms
10
0m
s
op
era
tio
Operation in this
area is limited by RDS(on).
n(
Ta
=
25
°C
)
--0.1
7
5
Ta=25°C
3
2 Single pulse
2
--0.01 When mounted on ceramic substrate (900mm ×0.8mm)
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5
Drain-to-Source Voltage, VDS -- V
IT14500
When mounted on ceramic substrate
(900mm2×0.8mm)
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14486
No. A1430-4/7
ECH8310
Embossed Taping Specification
ECH8310-TL-H
No. A1430-5/7
ECH8310
Outline Drawing
ECH8310-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1430-6/7
ECH8310
Note on usage : Since the ECH8310 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
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the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
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This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1430-7/7
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