ECH8611 Ordering number : ENN8127 P-Channel Silicon MOSFET ECH8611 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS ±9 V ID --5 A Drain Current (DC) Drain Current (Pulse) PW≤10µs, duty cycle≤1% --40 A Allowable Power Dissipation IDP PD Mounted on a ceramic board(900mm2✕0.8mm)1unit 1.3 W Total Power Dissipation PT Mounted on a ceramic board(900mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS Conditions ID= --1mA, VGS=0 VDS= --12V, VGS=0 Ratings min typ Unit max --12 V --10 ±10 µA µA Forward Transfer Admittance VGS(off) yfs VGS=±7.2V, VDS=0 VDS= --6V, ID= --1mA VDS= --6V, ID= --2.5A RDS(on)1 RDS(on)2 ID= --2A, VGS= --4.5V ID= --1A, VGS= --2.5V 30 40 mΩ Static Drain-to-Source On-State Resistance 45 65 mΩ ID= --0.5A, VGS= --1.8V VDS= --6V, f=1MHz 66 95 mΩ Input Capacitance RDS(on)3 Ciss Cutoff Voltage Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf --0.3 6.6 --1.0 9.5 1230 VDS= --6V, f=1MHz VDS= --6V, f=1MHz V S pF 380 pF 330 pF See specified Test Circuit. 16 ns See specified Test Circuit. 190 ns See specified Test Circuit. 110 ns See specified Test Circuit. 120 ns Marking : FD Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21005PE TS IM TA-100402 No.8127-1/4 ECH8611 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS= --6V, VGS= --4.5V, ID= --5A 12 nC Gate-to-Source Charge Qgs VDS= --6V, VGS= --4.5V, ID= --5A 1.5 nC Gate-to-Drain “Miller” Charge Qgd VDS= --6V, VGS= --4.5V, ID= --5A Diode Forward Voltage VSD IS= --5A, VGS=0 Package Dimensions unit : mm 2206B 3.7 --0.85 1 4 0.65 0.25 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.15 0.25 2.3 5 7 2.8 0.3 V Electrical Connection 8 8 nC --1.5 1 2.9 0.07 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 2 3 4 Top view SANYO : ECH8 Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --3A RL=2Ω VOUT VIN D PW=10µs D.C.≤1% G ECH8611 P.G 50Ω S No.8127-2/4 ECH8611 ID -- VDS V --1.5V --8 --2.0 --1.5 --1.0 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 90 80 70 ID= --2A --1A 50 --0.5A 40 30 20 10 0 --2 --4 --6 Gate-to-Source Voltage, VGS -- V 0 yfs -- ID 5 Ta= 7 5 C 75° C °C 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 .5 70 --0 I D= 60 50 I D= 40 2 --10 .5V = --2 , VGS --1.0A V = --4.5 , V GS 2.0A I D= -- 30 20 10 --50 --25 0 25 50 75 100 125 150 VGS=0 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V IT08397 SW Time -- ID --1.1 IT08398 Ciss, Coss, Crss -- VDS 5 VDD= --6V VGS= --4.5V 175 IT08396 IF -- VSD 3 2 25 3 .8V --1 S= A, VG 80 Ambient Temperature, Ta -- °C 3 5° --2 2.0 IT08394 90 IT08395 2 1.5 RDS(on) -- Ta 0 --75 --8 VDS= --6V 10 1.0 100 Ta=25°C 60 0.5 Gate-to-Source Voltage, VGS -- V IT08393 Forward Current, IF -- A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 --1.0 RDS(on) -- VGS 100 Forward Transfer Admittance, yfs -- S --0.9 --25 °C --0.4 25° C --0.3 75 °C --0.2 Ta= --0.1 0 f=1MHz 3 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --3 --1 VGS=0 0 5 --4 --2 --0.5 7 --5 °C 25° --25 C °C --2.5 --6 75 --3.0 --7 Ta = --3.5 VDS= --6V --9 Drain Current, ID -- A --4.0 ID -- VGS --10 --1 .8 --4.5V --4.0V --4.5 Drain Current, ID -- A --3.5 --3.0 V V --5.0 2 td(off) 100 tf 7 tr 5 3 td(on) 2 2 Ciss 1000 7 5 Coss Crss 3 2 10 7 --0.1 100 2 3 2 --1.0 Drain Current, ID -- A 5 7 3 5 7 IT08399 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT08400 No.8127-3/4 ECH8611 VGS -- Qg --100 7 5 3 2 VDS= --6V ID= --3A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 2 4 6 8 10 Total Gate Charge, Qg -- nC 14 IT08401 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 12 --10 7 5 3 2 ASO 1m s 10 ID= --5A ms 10 DC 0m s op era --1.0 7 5 3 2 --0.1 7 5 3 2 <10µs IDP= --40A tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 IT08402 Mounted on a ceramic board(900mm2✕0.8mm) 1unit 1.6 1.5 1.4 1.3 1.2 To t al 1.0 Di ss 1u 0.8 ip ati on nit 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08403 Note on usage : Since the ECH8611 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8127-4/4