Sanyo ECH8662 General-purpose switching device application Datasheet

ECH8662
Ordering number : ENA1259A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8662
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance
2.5V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Unit
40
V
±10
V
6.5
A
PW≤10μs, duty cycle≤1%
40
A
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
1.3
W
Total Dissipation
PD
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (900mm2×0.8mm)
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-001
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8662-TL-H
Top View
0.25
2.9
Packing Type : TL
8
TH
5
Lot No.
2.3
TL
4
1
0.65
Electrical Connection
0.3
0.9
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.07
2.8
0 t o 0.02
0.25
Marking
0.15
Bot t om View
8
7
6
5
1
2
3
4
SANYO : ECH8
http://semicon.sanyo.com/en/network
52312 TKIM/70908PE TIIM TC-00001419 No. A1259-1/7
ECH8662
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Conditions
Ratings
min
typ
Unit
max
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=40V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
0.4
VDS=10V, ID=3.5A
3.9
RDS(on)1
ID=3.5A, VGS=4.5V
23
30
mΩ
RDS(on)2
ID=3.5A, VGS=4V
25
33
mΩ
RDS(on)3
ID=1.5A, VGS=2.5V
30
42
mΩ
Input Capacitance
Ciss
1130
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
77
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
60
pF
Turn-ON Delay Time
td(on)
14
ns
Rise Time
tr
34
ns
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
40
See specified Test Circuit.
VDS=20V, VGS=4.5V, ID=6.5A
IS=6.5A, VGS=0V
V
1
μA
±10
μA
1.3
6.5
V
S
93
ns
55
ns
12
nC
2.2
nC
3.4
nC
0.85
1.2
V
Switching Time Test Circuit
4.5V
0V
VDD=20V
VIN
ID=3.5A
RL=5.7Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ECH8662
P.G
50Ω
S
Ordering Information
Device
ECH8662-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1259-2/7
ECH8662
ID -- VDS
4.0
3.5
1.5V
3.0
2.5
2.0
1.5
6
5
4
3
2
1.0
1
VGS=1.2V
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
ID=1.5A
3.5A
36
27
18
9
0
0
1
2
3
4
5
6
7
.5A
=1
I D 3.5A
,
.5V , I D=
=2
.5A
S
.0V
G
=3
V
=4
I
, D
S
VG
.5V
=4
S
VG
36
27
18
9
--40
--20
0
20
40
60
80
100
120
1.0
7
5
=
Ta
°C
25
--
°C
75
°C
3
2
25
0.1
7
5
3
2
140
160
IT13828
IS -- VSD
VGS=0V
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
5 70.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
Drain Current, ID -- A
0
5 7 10
IT13829
0.4
0.6
0.8
1.0
1.2
IT13830
Ciss, Coss, Crss -- VDS
3
VDD=20V
VGS=4.5V
2
0.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
3
f=1MHz
2
Ciss
1000
td(off)
100
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
45
2
3
2
2.5
IT13826
Ambient Temperature, Ta -- °C
VDS=10V
0.01
0.001 2 3
2.0
54
IT13827
| yfs | -- ID
1.5
RDS(on) -- Ta
0
--60
8
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
Gate-to-Source Voltage, VGS -- V
1.0
63
54
45
0.5
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
63
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
1.0
IT13825
Ta=7
5°C
25°C
--25°
C
0
10
7
5
25°C -25°C
4.5
7
Ta=7
5°C
Drain Current, ID -- A
5.0
VDS=10V
8
Drain Current, ID -- A
5.5
ID -- VGS
9
1.8
V
6.0
2.5V
2.0V
8.0V 4.5V 4.0V
6.5
7
tf
5
3
tr
2
td(on)
5
3
2
100
Coss
7
Crss
5
10
7
0.1
7
3
2
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
10
IT13831
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V
35
40
IT13832
No. A1259-3/7
ECH8662
VGS -- Qg
5.0
VDS=20V
ID=6.5A
4.5
4.0
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
100
7
5
3
2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
7
8
9
Total Gate Charge, Qg -- nC
11
12
IT13833
PD -- Ta
1.8
Allowable Power Dissipation, PD -- W
10
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
PW≤10μs
IDP=40A
10
0μ
s
1m
s
ID=6.5A
10m
s
DC
10
0m
op
s
tio
n(
Operation in this
Ta=
area is limited by RDS(on).
25
°C
)
era
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
0.01
0.1
2
3
5 7 1.0
2
3
5 7 10
2
Drain-to-Source Voltage, VDS -- V
3
5
7
IT13834
When mounted on ceramic substrate
(900mm2✕0.8mm)
1.6
1.5
1.4
1.3
1.2
To
t
al
1.0
0.8
Di
ss
1u
nit
ip
ati
on
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13835
No. A1259-4/7
ECH8662
Embossed Taping Specification
ECH8662-TL-H
No. A1259-5/7
ECH8662
Outline Drawing
ECH8662-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1259-6/7
ECH8662
Note on usage : Since the ECH8662 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
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mentioned above.
This catalog provides information as of May, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1259-7/7
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