WJ ECP100D-PCB900 1 watt, high linearity ingap hbt amplifier Datasheet

ECP100D
The Communications Edge TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
x 18 dB Gain @ 900 MHz
x 12 dB Gain @ 1960 MHz
x Single Positive Supply (+5V)
x Lead-free/Green/RoHS-compliant
16pin 4mm QFN package
Applications
x Final stage amplifiers for
Repeaters
x Mobile Infrastructure
x Defense / Homeland Security
Units Min
Parameter
Typ Max
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
+25.5
W-CDMA Channel Power
dBm
+23
Noise Figure
Operating Current Range , Icc (3)
Device Voltage, Vcc
dB
mA
V
6.3
450
5
@ -45 dBc ACPR, 2140 MHz
N/C
N/C
N/C
13
12 N/C
N/C 2
11 RF OUT
RF IN 3
10 RF OUT
9 N/C
5
6
7
8
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
Pin No.
1
3
10, 11
16
Backside Paddle
2, 4-9, 12-15
Typical Performance (4)
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
14
N/C 4
The product is targeted for use as driver amplifier for
various current and next generation wireless
technologies such as GPRS, GSM, CDMA, W-CDMA,
and UMTS, where high linearity and high power is
required. The internal active bias allows the ECP100D
to maintain high linearity over temperature and operate
directly off a +5 V supply.
Specifications (1)
Parameter
15
N/C
x +46 dBm Output IP3
16
Vref 1
N/C
x +31.5 dBm P1dB
The ECP100D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve superior performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +31.5 dBm of compressed 1-dB power.
It is housed in an industry standard Leadfree/Green/RoHS-compliant 16-pin 4x4mm QFN SMT
package. All devices are 100% RF and DC tested.
Vbias
x 400 – 2300 MHz
Functional Diagram
N/C
Product Description
N/C
Product Features
400
2300
2140
11
18
8
+31.5
+45
10
+29
+43.8
400
Units
Frequency
S21 – Gain
S11
S22
Output P1dB
Output IP3
IS-95A Channel Power
MHz
dB
dB
dB
dBm
dBm
W-CDMA Channel Power
dBm
@ -45 dBc ACPR
@ -45 dBc ACPR
500
Noise Figure
Supply Bias (3)
dBm
dB
Typical
900
18
-13
-7
+31
+46
+25.
5
1960
12
-11
-10
+32
+46
2140
11
-18
-8
+31.5
+45
+25.5
+23
7.0
5.5
6.2
+5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
1. Test conditions unless otherwise noted: T = 25 ºC, Vsupply = +5 V in a tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 10, 11 and 16. It is expected that the current can increase by an additional 90 mA at P1dB.
Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will
pull 10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current
typically will be 461 mA.)
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85 qC
-65 to +125 qC
+26 dBm
+8 V
900 mA
5W
+250 qC
Ordering Information
Part No.
Description
1 Watt InGaP HBT Amplifier
ECP100D-G
ECP100D-PCB900
ECP100D-PCB1960
ECP100D-PCB2140
(Lead-free/Green/RoHS-compliant 16-pin 4x4mm Pkg.)
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
Page 1 of 7
April 2006
ECP100D
The Communications Edge TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
Typical Device Data – ECP100D (QFN 4x4mm Package)
S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 C, calibrated to device leads)
S11
1.0
0.8
2.
0
2.
0
6
0.
1.0
6
0.
0
3.
30
4.
25
0
3.
0
4.
0
5.0
0.2
5.0
10.0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0
0.2
20
0.4
10.0
15
-3
.0
Swp Min
50MHz
-1.0
-0.8
6
-0
.
Swp Min
50MHz
-1.0
-0.8
.0
-2
.4
-0
.0
-2
2500
6
2050
-0
.
1050
1550
Frequency (MHz)
-3
.0
-4
.0
- 5.
0
550
.0
50
2
-0.
-4
0
.4
-0
0
-10.
2
- 0.
5
-5.
0
10
-10.0
Gain (dB)
Swp Max
4000MHz
0.2
DB(GMax())
0.
4
DB(|S(2,1)|)
35
S22
Swp Max
4000MHz
0.
4
40
0. 8
Gain / Maximum Stable Gain
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance loss plots are shown from 0.05, 0.1 and 0.2 – 4.0 GHz, with markers placed in 0.2 GHz increments.
S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
S11 (dB)
S11 (ang)
-1.35
-1.11
-1.09
-1.24
-1.36
-1.51
-1.88
-2.45
-3.52
-5.37
-9.94
-26.16
-10.08
-4.89
-2.68
-1.73
-1.22
S21 (dB)
-176.77
179.08
174.88
167.79
159.88
152.29
144.07
135.03
124.13
110.92
96.35
134.17
-149.55
-169.19
172.75
158.17
144.56
24.16
19.50
15.39
11.91
9.93
8.39
7.37
6.77
6.49
6.54
6.46
6.08
4.75
2.58
0.02
-2.72
-5.32
S21 (ang)
S12 (dB)
120.86
115.85
113.56
103.30
92.23
81.19
70.82
59.35
45.92
30.31
9.32
-13.70
-39.92
-63.31
-82.87
-98.11
-111.57
S12 (ang)
-39.11
-38.95
-39.17
-39.00
-37.15
-38.07
-38.22
-36.33
-35.42
-34.81
-33.63
-33.50
-35.80
-36.84
-37.99
-40.80
-43.97
18.98
8.44
8.30
-4.09
-12.20
-10.64
-7.28
-22.70
-38.76
-55.67
-73.80
-93.59
-116.52
-156.32
-159.31
148.39
152.56
S22 (dB)
S22 (ang)
-0.87
-1.00
-1.02
-0.72
-0.75
-0.87
-1.00
-1.02
-1.07
-1.15
-1.01
-1.00
-0.92
-0.88
-1.01
-0.96
-1.08
-131.71
-154.54
-167.00
-173.95
-177.40
-178.56
179.90
177.51
176.63
174.49
171.25
169.44
165.85
161.06
157.31
151.44
148.03
Application Circuit PC Board Layout
Circuit Board Material: Top RF layer is .014” Getek, 4 total layers (0.062” thick) for mechanical rigidity
1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and
output tuning shunt capacitors – C8, C9 and C10. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
Page 2 of 7
April 2006
ECP100D
The Communications Edge TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
900 MHz Application Circuit (ECP100D-PCB900)
Typical RF Performance at 25 qC
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
900 MHz
18 dB
-13 dB
-7.0 dB
+31 dBm
(@-45 dBc ACPR, IS-95 9 channels fwd)
PO RT
P=1
Z=50 Ohm
RES
ID=R3
R=51 Ohm
CAP
ID=C1
C=56 pF
16
13
TLINP
ID=FR1
Z0=50 Ohm
L=175 mil
Eeff =3.16
Loss=0
F0=0 MHz
15
14
15
14
·The transmission line length are from the
edge of the ECP100D pins to the cent er of the component .
All passive component s are of size 0603 unless ot herwise noted.
IND
ID=L1
L=33 nH
112
SUBCKT
I D=ECP 100D
NET="Q FN"
94
58
67
76
CAP
ID=C3
C=56 pF
size 1008
10
3
4
9
7.0 dB
+5 V
450 mA
CAP
ID=C6
C=10 pF
12
1
2
11
CAP
ID=C8
C=8.2 pF
CA P
I D=C2
C=56 pF
CAP
ID=C7
C=1000 pF
16
13
1
12
+25.5 dBm
Noise Figure
Device / Supply Voltage
Quiescent Current (1)
CAP
ID=C4
C=10000000 pF
RES
ID=R2
R=22 Ohm
3
10
Channel Power
+5.6 V zener
CAP
I D=C5
C=1000 pF
+46 dBm
(+15 dBm / tone, 1 MHz spacing)
+5 V
RES
ID=R1
R=51 Ohm
TLINP
ID=FR4
Z0=50 Ohm
L=475 mil
Eeff=3.16
Loss =0
F0=0 MHz
85
This component should be placed at silk screen marker
"C" on the WJ evaluat ion board as shown.
PORT
P=2
Z=50 Ohm
CAP
ID=C9
C=6.8 pF
This c omponent should be placed at
silk screen marker "9" on the WJ
evaluation board as shown.
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S11 vs. Frequency
18
-4
-4
16
14
+25°C
12
+85°C
8
840
860
880
-8
-12
+25°C
+85°C
-16
-40°C
900
920
860
Frequency (MHz)
-12
+25°C
+85°C
880
900
920
940
+25°C
+85°C
860
880
900
920
30
+25°C
28
+85°C
-40°C
860
Frequency (MHz)
OIP3 vs. Output Power
47
47
44
41
38
880
900
Frequency (MHz)
920
940
-40°C
-55
-60
-70
19
20
21 22
23 24 25
Output Channel Power (dBm)
35
22
25
26
27
OIP3 vs. Frequency
freq. = 900, 901 MHz, +15 dBm
+25°C, +15 dBm / tone
50
47
44
41
44
41
38
38
16
19
Output Power (dBm)
+85°C
OIP3 (dBm)
50
OIP3 (dBm)
50
13
+25°C
-50
OIP3 vs. Temperature
freq. = 900, 901 MHz, +25°C
10
-45
-65
24
840
940
940
IS-95, 9 Ch. Fwd, ±885 KHz offset, 30 KHz Meas BW, 900 MHz
26
-40°C
920
-40
ACPR (dBc)
P1 dB (dBm)
8
900
Frequency (MHz)
32
9
5
840
880
ACPR vs. Channel Power
34
6
860
P1 dB vs. Frequency
10
7
-40°C
-20
840
Frequency (MHz)
Noise Figure vs. Frequency
NF (dB)
-8
-16
-40°C
-20
840
940
S22 (dB)
0
10
OIP3 (dBm)
S22 vs. Frequency
0
S11 (dB)
S21 (dB)
S21 vs. Frequency (MHz)
20
35
-40
-15
10
35
Temperature (°C )
60
85
35
840
860
880
900
Frequency (MHz)
920
940
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
Page 3 of 7
April 2006
ECP100D
The Communications Edge TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
1960 MHz Application Circuit (ECP100D-PCB1960)
Typical RF Performance at 25 qC
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
PORT
P=1
Z= 50 Ohm
TLINP
ID=FR1
Z0=50 Ohm
L=175 mil
Eef f=3.16
Loss=0
F0=0 MH z
RES
ID=R 3
R=51 Ohm
CAP
ID=C1
C=56 pF
+25.5 dBm
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current (1)
5.5 dB
+5 V
450 mA
CAP
ID=C 4
C=10000000 pF
RES
ID=R2
R=22 Ohm
16
1
3
15
14
14
15
13
16
112
SUBC KT
I D=ECP100D
N ET="QFN"
·The transmission line length are from the
edge of the ECP100D pins t o the center of the component.
All passive components are of size 0603 unless otherwise noted.
size 1008
103
49
TLINP
ID=FR4
Z0= 50 Ohm
L=150 mil
Eeff=3.16
Loss=0
F0= 0 MHz
94
58
67
7
6
This component should be placed at silk screen marker
"C" on the W J evaluation board as show n.
TLINP
ID=FR2
Z0=50 Ohm
L=300 mil
Eef f=3.16
Loss=0
F0=0 MHz
I ND
I D=L1
L=18 nH
121
211
CAP
ID =C8
C=.8 pF
CAP
ID= C2
C=56 pF
CAP
ID=C 7
C=1000 pF
CAP
ID=C6
C=10 pF
112
310
Channel Power
+5.6 V zener
CAP
ID= C5
C= 1000 pF
+46 dBm
(+17 dBm / tone, 1 MHz spacing)
+5 V
RES
ID= R1
R=51 Ohm
1960 MHz
12 dB
-11 dB
-10 dB
+32 dBm
85
CAP
ID=C3
C= 56 pF
CAP
ID=C9
C=3.3 pF
CAP
ID =C10
C= .8
This component should be placed at
silk screen marker "9" on the WJ
evaluation board as show n.
This component sh ould be placed between
silk screen markers "2" and "3" on the WJ
evaluat ion board as shown.
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S11 vs. Frequency
S22 vs. Frequency
0
16
-5
-5
14
12
+25°C
+85°C
10
1940
-15
+25°C
+85°C
1950
1960
1970
1980
-40°C
-25
1930
1990
Frequency (MHz)
1940
1950
P1 dB (dBm)
NF (dB)
1980
1990
5
4
+85°C
1
-40°C
1940
1950
1970
1980
29
+85°C
-40°C
1940
1950
OIP3 vs. Frequency
1960
1970
1980
1990
45
40
1940
1950
1960
1970
+85°C
-40°C
OIP3 vs. Output Power
freq. = 1960, 1961 MHz, +25°C
freq. = 1960, 1961 MHz, +15 dBm
50
46
47
43
39
35
1930
1980
Frequency (MHz)
1990
1990
15 16 17 18 19 20 21 22 23 24 25 26 27
Output Channel Power (dBm)
OIP3 (dBm)
51
OIP3 (dBm)
50
1980
+25°C
OIP3 vs. Temperature
+25°C, 15 dBm / tone
55
1970
-40
-45
-50
-55
-60
-65
-70
-75
-80
-85
Frequency (MHz)
55
1960
ACPR vs. Channel Power
+25°C
25
1930
1990
1950
Frequency (MHz)
31
27
1960
1940
IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas BW, 1960 MHz
Frequency (MHz)
OIP3 (dBm)
1970
33
6
0
1930
1960
-40°C
-25
1930
35
7
+25°C
+85 °C
P1 dB vs. Frequency
8
2
+25 °C
-15
Frequency (MHz)
Noise Figure vs. Frequency
3
-10
-20
ACPR (dBc)
8
1930
-10
-20
-40°C
S22 (dB)
0
S11 (dB)
S21 (dB)
S21 vs. Frequency
18
42
38
34
35
30
-40
-15
10
35
Temperature ( °C)
60
85
10
12
14
16
18
Output Power (dBm)
20
22
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
PORT
P=2
Z=50 Ohm
Page 4 of 7
April 2006
ECP100D
The Communications Edge TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit (ECP100D-PCB2140)
Typical RF Performance at 25 qC
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
2140 MHz
11 dB
-18 dB
-8.0 dB
+31.5 dBm
Channel Power
Noise Figure
Device / Supply Voltage
Quiescent Current (1)
CAP
ID=C4
C=10000000 pF
RES
ID=R2
R=22 Ohm
RES
ID=R3
R=51 Ohm
CAP
ID=C1
C=56 pF
PORT
P=1
Z=50 Ohm
TLINP
ID=FR1
Z0=50 Ohm
L=375 mil
Eeff=3.16
Loss =0
F0=0 MHz
16
13
15
14
14
15
CAP
ID=C7
C=1000 pF
CAP
ID=C6
C=10 pF
16
13
1
12
12
1
2
11
11
2
SUBCKT
ID=ECP100D
NET="QFN"
3
10
+23 dBm
(@-45 dBc ACPR, IS-95 9 channels fwd)
+5.6 V zener
CAP
ID=C5
C=1000 pF
+45 dBm
(+15 dBm / tone, 1 MHz spacing)
+5 V
RES
ID=R1
R=51 Ohm
CAP
ID=C2
C=56 pF
·The transmission line length are from the
edge of the ECP100D pins to the cent er of t he component.
All passive components are of size 0603 unless otherwise noted.
CAP
I D=C8
C=1.0 pF
CAP
ID=C3
C=56 pF
size 1008
10
PORT
P=2
Z=50 Ohm
3
49
6.2 dB
+5 V
450 mA
IND
ID=L1
L=18 nH
94
8
5
6
7
76
8
5
This component should be plac ed at silk s creen mark er
"G" on the WJ evaluation board as shown.
TLINP
ID=FR4
Z0=50 Ohm
L=175 mil
Eeff=3.16
Loss=0
F0=0 MHz
CAP
ID=C9
C=2.4 pF
This component should be placed
at silk screen marker "3" on the
WJ evaluation board as shown.
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
-14
47
9
+25°C
+85°C
0
2110
2130
2140
2150
2160
2170
2120
2130
2140
2150
2160
Noise Figure vs. Frequency
NF (dB)
+25°C
+85°C
-40°C
2130
2140
2150
2160
2170
Frequency (MHz)
44
41
35
2170
-40
S22 vs. Frequency
9
8
7
6
5
4
3
2
1
0
2110
freq. = 2140, 2141 MHz, +15 dBm / tone
38
Frequency (MHz)
-10
2120
-40°C
Frequency (MHz)
-5
-20
2110
+85°C
-30
2110
0
-15
+25°C
-22
-26
-40°C
2120
-18
-15
+25°C
+85°C
2130
41
38
-40°C
2120
44
2140
2150
2160
35
2110
2170
2120
ACPR vs. Channel Power
+25°C
28
+85°C
-40°C
26
24
2110
2120
2140
2150
2160
Frequency (MHz)
2170
2170
47
-50
+25°C
-55
+85°C
44
41
38
-40°C
-60
2130
2160
freq. = 2140, 2141 MHz, 25°C
50
OIP3 (dBm)
30
2130 2140 2150
Frequency (MHz)
OIP3 vs. Output Power
3GPP W-CDMA, Test Model 1+64 DPCH, ±5MHz offset, 2140 MHz
-45
ACPR (dBc)
P1 dB (dBm)
32
85
47
P1 dB vs. Frequency
-40
60
+25°C, +15 dBm / tone
50
Frequency (MHz)
34
10
35
Temperature (°C )
OIP3 vs. Frequency
OIP3 (dBm)
6
OIP3 (dBm)
12
S11 (dB)
50
S21 (dB)
-10
3
S22 (dB)
OIP3 vs. Temperature
S11 vs. Frequency
S21 vs. Frequency
15
35
-65
19
20
21
22
23
Output Channel Power (dBm)
10
24
12
14
16
18
Output Power (dBm)
20
22
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
Page 5 of 7
April 2006
ECP100D
The Communications Edge TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
Application Note: Reduced Bias Configurations
The ECP100D, like the AH215-S8 can be configured to operate with lower bias current by varying the bias-adjust resistor –
R1. The recommended circuit configurations shown previously in this datasheet have the device operating in Class A
operation. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower
the ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH215S8 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency
applications will produce similar performance results.
R1
(ohms)
51
68
100
130
180
Icq
(mA)
450
400
350
300
250
Pdiss
(W)
2.25
2.00
1.75
1.50
1.25
P1dB
(dBm)
+31.0
+30.9
+30.8
+30.6
+30.5
+5.6 V zener
CAP
ID=C5
C=1000 pF
OIP3
(dBm)
+47.1
+46.4
+46.4
+45.5
+43.6
CAP
ID=C4
C=10000000 pF
RES
ID=R2
R=22 Ohm
CAP
ID=C7
C=1000 pF
CAP
ID=C6
C=10 pF
CAP
ID=C1
C=56 pF
PORT
P=1
Z=50 Ohm
2.14GHz Gain vs. Output Power
13
TLINP
ID=FR1
Z0=50 Ohm
L=375 mil
Eeff=3.16
Loss =0
F0=0 MHz
RES
ID=R3
R=51 Ohm
CAP
ID=C2
C=56 pF
·The transmission line length are from the
edge of the ECP100D pins to the cent er of t he component.
All passive components are of size 0603 unless otherwise noted.
11.5
+5 V
RES
ID=R1
R=51 Ohm
AH215S8-PCB2140 Performance Data
14
15
16
12
IND
ID=L1
L=18 nH
1
SUBCKT
ID=ECP100D
NET="QFN"
11
10
3
9
4
CAP
I D=C8
C=1.0 pF
8
7
6
CAP
ID=C3
C=56 pF
size 1008
2
TLINP
ID=FR4
Z0=50 Ohm
L=175 mil
Eeff=3.16
Loss=0
F0=0 MHz
5
This component should be plac ed at silk s creen mark er
"G" on the WJ evaluation board as shown.
PORT
P=2
Z=50 Ohm
CAP
ID=C9
C=2.4 pF
This component should be placed
at silk screen marker "3" on the
WJ evaluation board as shown.
2.14GHz OIP3 vs. Output Power per Tone
50
11
10
OIP3 (dBm)
Gain (dB)
45
10.5
Idq=450mA ’Class A’
Idq=400mA
9.5
40
Idq=400mA
Idq=350mA
9
Idq=450mA ’Class A’
Idq=350mA
35
Idq=300mA
Idq=300mA
Idq=250mA
8.5
Idq=250mA
30
16
18
20
22
24
26
28
30
32
10
12
14
Output Power (dBm)
W-CDMA ACLR vs. Output Channel Power
Idq=450mA ’Class A’
22
24
Idq=400mA
Idq=400mA
Idq=350mA
Idq=300mA
PAE (%)
Idq=350mA
ACLR (dBc)
20
Idq=450mA ’Class A’
-35
-45
18
CW PAE vs. Output Power
100
3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset
-40
16
Power Out per Tone (dBm)
Idq=300mA
Idq=250mA
-50
Idq=250mA
10
-55
-60
1
-65
12
14
16
18
20
22
16
24
W-CDMA Channel Power Out (dBm)
18
20
22
24
26
28
CW Tone Power Out (dBm)
30
32
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
Page 6 of 7
April 2006
ECP100D
The Communications Edge TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
ECP100D-G Mechanical Information
This package is Lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded
(maximum 245 qC reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Product Marking
Outline Drawing
The component will be marked with an
“E100G” designator with an alphanumeric lot
code on the top surface of the package. The
obsolete tin-lead package is marked with an
“EC100D” designator followed by an
alphanumeric lot code.
')
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Land Pattern
Class 1B
Passes between 500 and 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260 C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1.
2.
3.
4.
5.
6.
7.
8.
Thermal Specifications
MTTF vs. GND Tab Temperature
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tj (2)
-40 to +85 qC
33 qC / W
159 qC
Notes:
1. The thermal resistance is referenced from the junction-to-case at a case
temperature of 85 C. Tjc is a function of the voltage at pins 10 and 11 and
the current applied to pins 10, 11, and 16 and can be calculated by:
Tj = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V, 450 mA at an 85
C case temperature. A minimum MTTF of 1 million hours is achieved for
junction temperatures below 247 C.
1000000
MTTF (million hrs)
Parameter
100000
10000
1000
100
50
60
70
80
Tab temperature (° C)
WJ Communications, Inc
Phone 1-800-WJ1-4401
A heatsink underneath the area of the PCB for the mounted
device is recommended for proper thermal operation.
Damage to the device can occur without the use of one.
Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135” )
diameter drill and have a final plated thru diameter of .25
mm (.010” ).
Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
RF trace width depends upon the PC board material and
construction.
Use 1 oz. Copper minimum.
All dimensions are in millimeters (inches). Angles are in
degrees.
FAX: 408-577-6621
e-mail: [email protected]
90
100
Specifications and information are subject to change without notice
Web site: www.wj.com
Page 7 of 7
April 2006