PHILIPS ED1402D Npn general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
ED1402
NPN general purpose transistor
Product specification
Supersedes data of 1997 Sep 04
1999 Apr 27
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1402
FEATURES
PINNING
• Low current (max. 200 mA)
PIN
DESCRIPTION
• Low voltage (max. 20 V)
1
emitter
• High gain.
2
base
3
collector
APPLICATIONS
• General purpose switching and amplification.
handbook, halfpage1
DESCRIPTION
3
2
3
2
NPN transistor in a plastic TO-92; SOT54 package.
PNP complement: ED1602.
1
MAM182
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
28
V
VCEO
collector-emitter voltage
open base
−
20
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
200
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
Tamb ≤ 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Refer to TO-92; SOT54 standard mounting conditions.
1999 Apr 27
2
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1402
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
250
K/W
Note
1. Refer to TO-92; SOT54 standard mounting conditions.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 30 V
MIN.
−
MAX.
15
UNIT
ICBO
collector cut-off current
nA
IE = 0; VCB = 30 V; Tj = 150 °C
−
5
µA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
100
nA
hFE
DC current gain
IC = 2 mA; VCE = 5 V
ED1402B
150
225
ED1402C
202
318
ED1402D
290
450
ED1402E
410
810
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V; note 1
−
770
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
5
pF
fT
transition frequency
IC = 1 mA; VCE = 10 V; f = 100 MHz
100
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 27
3
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1402
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
1999 Apr 27
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1402
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 27
5
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1402
NOTES
1999 Apr 27
6
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1402
NOTES
1999 Apr 27
7
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Date of release: 1999 Apr 27
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