WTE EFS1J-T3 1.0a low vf surface mount glass passivated superfast diode Datasheet

EFS1J
WTE
POWER SEMICONDUCTORS
Pb
1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
Features
!
Glass Passivated Die Construction
!
!
!
!
!
!
Ideally Suited for Automatic Assembly
B
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
A
Super-Fast Recovery Time
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G
E
SMA/DO-214AC
Dim
Min
Max
2.50
2.90
A
4.00
4.60
B
1.20
1.60
C
0.152
0.305
D
4.80
5.28
E
2.00
2.44
F
0.051
0.203
G
0.76
1.52
H
All Dimensions in mm
Mechanical Data
!
!
!
!
!
!
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
Characteristic
D
@TA=25°C unless otherwise specified
Symbol
EFS1J
Unit
VRRM
VRWM
VR
600
V
VR(RMS)
420
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
1.25
V
@TA = 25°C
@TA = 100°C
IRM
5.0
100
µA
Reverse Recovery Time (Note 1)
trr
50
nS
Typical Junction Capacitance (Note 2)
Cj
8
pF
RJL
35
°C/W
Tj, TSTG
-65 to +150
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Peak Reverse Current
At Rated DC Blocking Voltage
@TL = 75°C
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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© 2006 Won-Top Electronics
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FWD RECTIFIED CURRENT (A)
1.00
0.75
0.50
0.25
Single phase half wave
Resistive or Inductive load
0
0
25
50
75
100
125
150
Tj = 25°C
Pulse width = 300µs
10
1.0
0.1
0.01
0
175
0.4
0.6
0.8
1.0
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
30
100
Tj = 25°C
f = 1.0MHz
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TL , LEAD TEMPERATURE
( ° C)
Fig. 1 Forward Current Derating Curve
0.2
20
10
10
1
0
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
100
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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© 2006 Won-Top Electronics
MARKING INFORMATION
RECOMMENDED FOOTPRINT
0.050 MIN
(1.27 MIN)
WTE
EFS1J
Cathode
WTE
EFS1J
0.058 MIN
(1.47 MIN)
= Polarity Band
= Manufacturer’s Logo
= Device Number
0.083 MAX
(2.11 MAX)
inches(mm)
PACKAGING INFORMATION
TAPE & REEL
Direction of Unreeling
4mm
330mm
12mm
4mm
1.6mm
12mm
Product ID Label
Reel Diameter
(mm)
Quantity
(PCS)
Inner Box Size
L x W x H (mm)
Quantity
(PCS)
Carton Size
L x W x H (mm)
Quantity
(PCS)
Approx. Gross Weight
(KG)
330
7,500
340 x 337 x 45
15,000
370 x 370 x 420
120,000
17.5
Note: 1. Paper reel, white or gray color.
2. Components are packed in accordance with EIA standard 481-1 and 481-2.
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© 2006 Won-Top Electronics
ORDERING INFORMATION
Product No.
EFS1J-T3
1.
2.
Package Type
Shipping Quantity
SMA
7500/Tape & Reel
Shipping quantity given is for minimum packing quantity only. For minimum
order quantity, please consult the Sales Department.
To order RoHS / Lead Free version (with Lead Free finish), add “-LF” suffix
to part number above. For example, EFS1J-T3-LF.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: [email protected]
Internet: http://www.wontop.com
We power your everyday.
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© 2006 Won-Top Electronics
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