EGF10A THRU EGF10M SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts EEDD T T N N E E T PPAAT Forward Current - 1.0 Ampere DO-214AC FEATURES 0.115(2.92) 0.064(1.63) 0.090(2.28) 0.050(1.27) * * * * * * * GPRC (Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications Superfast recovery time for high efficiency Built-in strain relief Easy pick and place o High temperature soldering guaranteed: 260 C/10 seconds, at terminals * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 0.181(4.60) 0.157(4.00) 0.016(0.40) 0.006(0.15) 0.102(2.60) 0.079(2.00) 0.050(1.27) 0.030(0.76) MECHANICAL DATA 0.220(5.60) 0.190(4.83) Case : JEDEC DO-214AC molded plastic over passivated chip Terminals : Solder plated , solderable per MIL-STD-750, Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight : 0.002 ounes , 0.064 gram *Dimensions in inches and (millimeters) TM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o EGF10 Ratings at 25 C ambient temperature SYMBOLS unless otherwise specified. A B D F G J K M UNITS Maximum repetitive peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 140 210 280 420 560 700 Volts VDC 50 100 200 300 400 600 800 1000 Volts Maximum DC blocking voltage o Maximum average forward rectified current at TA=75 C I (AV) 1.0 Amps Peak forward surge current 8.3ms single half sine-wave IFSM 30 25 Amps 1.7 Volts superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0 A VF o 1.25 IR 5 30 50 5 50 - uA Maximum reverse recovery time (NOTE 1) trr 50 75 nS Typical junction capacitance (NOTE 2) CJ Maximum DC reverse current at rated DC blocking voltage TA=25 C o TA=125 C o TA=150 C 1.0 Typical thermal resistance (NOTE 3) Operating junction and storage temperature range R R 15 75 25 JA JL TJ,TSTG pF -65 to +175 o -55 to +150 C/W o C NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts (3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas. REV. : 0 Zowie Technology Corporation RATINGS AND CHARACTERISTIC CURVES EGF10A THRU EGF10M FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 1.0 RESISTIVE OR INDUCTIVE LOAD EGF10A~EGF10G EGF10J~EGF10M 0.5 0 TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 25 20 EGF10A~EGF10G 15 EGF10J~EGF10M 10 5 0 0 25 50 75 100 125 150 1 175 10 o NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 10.00 PULSE WIDTH=300uS 1% DUTY CYCLE INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 100 AMBIENT TEMPERATURE, C 1.00 0.10 0.01 0.2 EGF10J~EGF10M EGF10G EGF10A~EGF10F 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 1 o TJ=125 C o TJ=150 C 0.1 0 1.8 20 40 60 80 100 110 PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD VOLTAGE, VOLTS o TJ = 25 C 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, VOLTS REV. : 0 FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE 100 o JUNCTION CAPACITANCE, pF TRANSIENT THERMAL IMPEDANCE( C/W) FIG.5 - TYPICAL JUNCTION CAPACITANCE 200 40 100 10 1 0.1 0.01 0.10 1.0 10 100 t , PULSE DURATION, sec Zowie Technology Corporation