ZSELEC EGF2J 2.0a surface mount ultrafast diode Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
EGF2A – EGF2M
2.0A SURFACE MOUNT ULTRAFAST DIODE
Features
Ideally Suited for Automatic Assembly
B
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 5 0A Peak
J
Low Power Loss
A
C
Ultra-Fast Recovery Time
H
Plastic Case Material has UL Flammability
Classification Rating 94V-O
!
!
!
!
!
D
G
E
SMA
Mechanical Data
!
!
!
!
!
!
Case: SMA/DO-214AC SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: SMA Weight: 0.064 grams (approx.)
SMB Weight: 0.093 grams (approx.)
Lead Free: For RoHS / Lead Free Version
SMB
Dim
Min
Max
Min
Max
A
2.29
2.92
3.30
3.94
B
4.00
4.60
4.06
4.57
C
1.27
1.63
1.96
2.21
D
0.15
0.31
0.15
0.31
E
4.80
5.59
5.00
5.59
G
0.10
0.20
0.10
0.20
H
0.76
1.52
0.76
1.52
2.01
2.62
2.00
2.62
J
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Symbol
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
EGF2A EGF2B EGF2D EGF2G EGF2J EGF2K EGF2M
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
800
V
IO
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
50
A
Forward Voltage
@IF = 2.0A
VFM
@TA = 25°C
@TA = 100°C
IRM
Peak Reverse Current
At Rated DC Blocking Voltage
@TL = 100°C
@TA=25°C unless otherwise specified
1.0
1.3
1.7
V
10
500
µA
Reverse Recovery Time (Note 1)
trr
Typical Junction Capacitance (Note 2)
Cj
25
pF
RJL
30
°C/W
Tj, TSTG
-65 to +150
°C
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
50
75
nS
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
EGF2A – EGF2M
1 of 2
www.senocn.com
Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd.
2.0
1.0
0
25
75
100
125
150
10
EGF2A – EGF2D
EGF2G
1.0
EGF2J – EGF2M
0.1
Tj - 25°C
Pulse Width = 300µs
0.01
0
TL , LEAD TEMPERATURE
( ° C)
Fig. 1 Forward Current Derating Curve
Single Half Sine-Wave
(JEDEC Method)
6 0
40
20
Tj = 150°C
1
10
0.4
0.8
1.2
1.6
2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
IR, INSTANTANEOUS REVERSE CURRENT (mA)
IFSM, PEAK FORWARD SURGE CURRENT (A)
40
50
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
EGF2A – EGF2M
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
1000
100
Tj = 100°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
EGF2A – EGF2M
2 of 2
www.senocn.com
Alldatasheet
Similar pages