Excelics EIA/EIB1314-4P Not recommended for new designs. Contact factory. Effective 03/2003 13.75-14.5GHz, 4W Internally Matched Power FET • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 27% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+36dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314-4P SYMBOLS PARAMETERS/TEST CONDITIONS P1dB MIN TYP Output Power at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) 35.5 G1dB Gain at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) 7.5 PAE Power Added Efficiency at 1dB compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Id1dB Drain Current at 1dB Compression EIB1314-4P MAX MAX UNIT MIN TYP 36.5 35 36 dBm 8.5 6.5 7.5 dB 27 22 % 1760 1700 mA 43 49* dBm rd IP3 Output 3 Order Intercept Point f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Idss Saturated Drain Current Vds=3V, Vgs=0V Gm Transconductance Vds=3V, Vgs=0V Vp Pinch-off Voltage Vds=3V, Ids=24mA BVgd Drain Breakdown Voltage Igd=9.6mA Rth Thermal Resistance (Au-Sn Eutectic Attach) 2200 2880 3400 2200 3000 -1.0 -13 2720 3400 1400 -2.5 -2.0 -15 -15 4.5 4.5 mS -3.5 *Typical –45dBc IM3 at Pout=26dBm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 3120mA Igsf Forward Gate Current 360mA 60mA Pin Input Power 35dBm @ 3dB Compression Tch Channel Temperature 175oC 150oC Tstg Storage Temperature Pt Total Power Dissipation mA -65/175oC 30W -65/150oC 25W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com V V o C/W