Peregrine EK-42641-01 Sp4t ultracmos rf switch dc - 3.0 ghz Datasheet

Product Specification
PE42641
SP4T UltraCMOS™ RF Switch
DC – 3.0 GHz
Product Description
The PE42641 is a HaRP™-enhanced SP4T RF Switch
developed on the UltraCMOS™ process technology. This
switch contains 4 identical WEDGE/CDMA compliant TX paths
and can be used in various GSM and WCDMA mobile
applications as well as other wireless applications up to
3000MHz. It is also suitable for antenna band switching and
switchable matching networks for cellular and non-cellular
mobile applications. It integrates on-board CMOS control logic
with a low voltage CMOS-compatible control interface and
requires no DC blocking capacitors. This RoHS-compliant part
is available in a standard 3x3x0.75mm QFN package.
Peregrine’s HaRP™ technology enhancements deliver high
linearity and exceptional harmonics performance. It is an
innovative feature of the UltraCMOS™ process, providing
performance superior to GaAs with the economy and
integration of conventional CMOS.
Features
• Symmetric, High-Power SP4T: All
ports WEDGE/CDMA-Compliant
• Very Low Insertion Loss: 0.45 dB @
1000 MHz, 0.6 dB @ 2000 MHz
• HaRPTM - enhanced Technology for
Unparalleled Linearity
•
•
Low harmonics of 2fo = -86 dBc and
3fo = -81 dBc at +35 dBm
IMD3 of -110 dBm at WCDMA Band I
•
IIP3 of +68 dBm
• Very high isolation: 35 dB @ 900 MHz,
29 dB @ 1900 MHz
• Exceptionally high ESD tolerance:
•
•
Class 3 (4.0 kV HBM) on ANT pin
Class 2 (2.0 kV HBM) on all pins
• Integrated decoder for 2-pin control
•
Accepts 1.8 V and 2.75 V levels
• Low 4.5 ohm series ON resistance
• No blocking capacitors required
Figure 2. Package Type
Figure 1. Functional Diagram
16-lead 3x3 mm QFN
RF1
RF3
RF2
RF4
CMOS
Control Driver
and ESD
V1
V2
Document No. 70-0216-05 │ www.psemi.com
©2007-8 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 9
PE42641
Product Specification
Table 1. Electrical Specifications Temp = 25°C, VDD = 2.75 V (ZS = ZL = 50 Ω)
Parameter
Condition
Min
Operational Frequency
1
Insertion Loss (Symmetric Ports)
Return Loss (Active Ports)
100
Max
Units
3000
MHz
ANT - RF (850 / 900 MHz)
-
0.45
0.65
dB
ANT - RF (1800 / 1900 MHz)
-
0.5
0.7
dB
ANT - RF (1900 / 2200 MHz)
-
0.55
0.75
dB
850 / 900 MHz
-
25
-
dB
1800 / 1900 MHz
-
19
-
dB
1900 / 2100 MHz
-
18
-
dB
31
35
-
dB
RF - ANT (850 / 900 MHz)
Isolation
Typ
RF - ANT (1800 / 1900 MHz)
25
29
-
dB
RF - ANT (1900 / 2200 MHz)
23.5
27.5
-
dB
35 dBm output power, 850 / 900 MHz
-86
-80
dBc
33 dBm output power, 1800 / 1900 MHz
-87
-78
dBc
35 dBm output power, 850 / 900 MHz
-81
-73.5
dBc
33 dBm output power, 1800 / 1900 MHz
-80
-72.5
dBc
IMD3 distortion at 2.14 GHz
RF Measured at 2.14 GHz at Ant port, input +20 dBm CW
signal at 1.95 GHz and -15 dBm CW signal at 1.76 GHz
-110
Switching time
(10-90%) (90-10%) RF
2nd Harmonic
3rd Harmonic
2
dBm
5
µs
Note: 1. The typical ON Resistance value at DC is 4.5 Ω.
Table 2. Electrical Specifications, Worst Case Conditions: Temp = 85°C, VDD = 2.65 V (ZS = ZL = 50 Ω)
Parameter
Insertion loss (2.65V, 85C)
Return Loss (Active Ports)
(2.65V, 85C)
Isolation (2.65V, 85C)
2nd Harmonic (2.65V, 85C)
3rd Harmonic (2.65V, 85C)
Condition
Min
Typ
Max
Units
ANT - RF (850 / 900 MHz)
-
0.5
0.7
dB
ANT - RF (1800 / 1900 MHz)
-
0.55
0.75
dB
ANT - RF (1900 / 2200 MHz)
-
0.6
0.8
dB
850 / 900 MHz
-
25
-
dB
1800 / 1900 MHz
-
19
-
dB
1900 / 2100 MHz
-
18
-
dB
RF - ANT (850 / 900 MHz)
30.5
34.5
-
dB
RF - ANT (1800 / 1900 MHz)
24.5
28.5
-
dB
RF - ANT (1900 / 2200 MHz)
23
27
-
dB
-84
-78
dBc
35 dBm output power, 850 / 900 MHz
33 dBm output power, 1800 / 1900 MHz
-85
-76
dBc
35 dBm output power, 850 / 900 MHz
-79
-71.5
dBc
33 dBm output power, 1800 / 1900 MHz
-78
-70.5
dBc
IMD3 distortion at 2.14 GHz
(2.65V, 85C)
RF Measured at 2.14 GHz at Ant port, input +20 dBm CW
signal at 1.95 GHz and -15 dBm CW signal at 1.76 GHz
Switching time
(10-90%) (90-10%) RF
©2007-8 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 9
-108
2
dBm
5
µs
Document No. 70-0216-05 │ UltraCMOS™ RFIC Solutions
PE42641
Product Specification
Table 5. Absolute Maximum Ratings
RF1
GND
Symbol
VDD
13
14
N/C
16
15
Pin 1
RF2
Figure 3. Pin Configuration (Top View)
12
GND
11
ANT
3
10
GND
4
9
GND
Pin Name
GND
Ground
-0.3
4.0
V
-0.3
VDD+ 0.3
V
TST
Storage temperature range
-65
+150
°C
PIN(50 Ω)
PIN (∞:1)
2
VDD
Supply
3
V2
Switch control input, CMOS logic level
4
V1
Switch control input, CMOS logic level
5
GND
Ground
6
RF4
RF Port 4
7
GND
Ground
8
RF3
RF Port 3
9
GND
Ground
10
GND
Ground
11
ANT
RF Common – Antenna
12
GND
Ground
13
RF1
RF Port 1
14
GND
Ground
15
RF2
RF Port 2
16
N/C
No Connect
+36
RF input power (VSWR = (∞:1)3,4
824-915 MHz
+35
RF input power (VSWR = (∞:1)3,4
1710-1910 MHz
+33
dBm
ESD Voltage, ANT pin
4000
V
ESD Voltage, all pins
2000
V
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be
restricted to the limits in the Operating Ranges
table. Operation between operating range
maximum and absolute maximum for extended
periods may reduce reliability.
Table 6. Truth Table
Path
Symbol Min Typ Max Units
Temperature range
TOP
-40
+85
°C
VDD Supply Voltage
VDD
2.65 2.75
2.85
V
IDD Power Supply Current
(VDD = 2.75 V)
IDD
50
µA
13
RF input power2 (VSWR ≤ 3:1)
824-915 MHz
RF input power (VSWR ≤ 3:1)
1710-1910 MHz
dBm
RF input power (50 Ω) 3,4
1710-1910 MHz
Note: 3. Assumes RF input period of 4620 µs and duty cycle of 50%.
4. V DD within operating range specified in Table 3.
5. ESD Voltage (HBM, MIL-STD-883 Method 3015.7)
Table 4. Operating Ranges
2
+38
VESD 5
Description
Parameter
Units
Power supply voltage
RF input power (50 Ω) 3,4
824-915 MHz
RF3
GND
Pin No.
Max
Voltage on any DC input
Table 3. Pin Descriptions
1
Min
VI
8
V1
7
V2
GND
RF4
2
GND
VDD
6
1
5
GND
Parameter/Conditions
+35
dBm
PIN
V2
V1
ANT – RF1
0
0
ANT – RF2
1
0
ANT – RF3
0
1
ANT – RF4
1
1
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating.
+33
Control Voltage High
VIH
Control Voltage Low
VIL
1.4
V
0.4
V
Note: 2. Assumes RF input period of 4620 µs and duty cycle of 50%.
Document No. 70-0216-05 │ www.psemi.com
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
©2007-8 Peregrine Semiconductor Corp. All rights reserved.
Page 3 of 9
PE42641
Product Specification
Figure 4. Evaluation Board Layouts
Evaluation Kit
Peregrine Specification 101/0287
The SP4T switch EK Board was designed to ease
customer evaluation of Peregrine’s PE42641. The
RF common port is connected through a 50 Ω
transmission line via the top SMA connector, J1.
RF1, RF2, RF3 and RF4 are connected through
50 Ω transmission lines via SMA connectors J3,
J5, J2 and J4, respectively. A through 50 Ω
transmission is available via SMA connectors J6
and J7. This transmission line can be used to
estimate the loss of the PCB over the
environmental conditions being evaluated.
The board is constructed of a two metal layer FR4
material with a total thickness of 0.031”. The
bottom layer provides ground for the RF
transmission lines. The transmission lines were
designed using a coplanar waveguide with ground
plane model using a trace width of 0.044”, trace
gaps of 0.020”, dielectric thickness of 0.028”,
metal thickness of 0.0021” and εr of 4.3.
Figure 5. Evaluation Board Schematic
Peregrine Specification 102/0339
1
9
RF3
8
GND
7
RF4
6
GND
5
J4
SMASM
RF4
1
2
V1
V2
1
2
GND
GND
10
11
ANT
RF3
4
GND
3
16
U1
QFN50P3X3-16P
VDD
RF2
GND
RF2
GND
15
2
J5
SMASM
1
J2
SMASM
RF1
14
2
13
GND
RF1
2
J3
SMASM
1
12
ANT
1
J1
SMASM
2
J8
HEADER14
13
11
9
7
5
3
1
13
11
9
7 VDD
5
3 V2
1 V1
C4
DNI
R2
1M
R1
1M
C3
DNI
Unlabeled
Test Line
©2007-8 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 9
C2
DNI
C1
DNI
J6
SMASM
1
Through Line
J7
SMASM
1
2
14
12
10
8
6
4
2
2
14
12
10
8
6
4
2
Document No. 70-0216-05 │ UltraCMOS™ RFIC Solutions
PE42641
Product Specification
Figure 6. Insertion Loss: ANT-RF @ 25 °C
Figure 7. Insertion Loss: ANT-RF @ 2.75 V
Figure 8. Isolation: ANT-RF @ 25 °C
Figure 9. Isolation: ANT-RF @ 2.75 V
Document No. 70-0216-05 │ www.psemi.com
©2007-8 Peregrine Semiconductor Corp. All rights reserved.
Page 5 of 9
PE42641
Product Specification
Figure 10. Return Loss at active port @ 25 °C
©2007-8 Peregrine Semiconductor Corp. All rights reserved.
Page 6 of 9
Figure 11. Return Loss at active port @ 2.75 V
Document No. 70-0216-05 │ UltraCMOS™ RFIC Solutions
PE42641
Product Specification
Figure 12. Package Drawing
QFN 3x3 mm
A
MAX
0.800
NOM
0.750
MIN
0.700
Document No. 70-0216-05 │ www.psemi.com
©2007-8 Peregrine Semiconductor Corp. All rights reserved.
Page 7 of 9
PE42641
Product Specification
Figure 13. Tape and Reel Specifications
16-lead 3x3 mm QFN
Table 7. Ordering Information
Order Code Part Marking
Description
Package
Shipping Method
EK-42641-01
PE42641-EK
PE42641-16QFN 3x3mm-EK
Evaluation Kit
1 / Box
PE42641MLI
42641
PE42641G-16QFN 3x3mm-75A
Green 16-lead 3x3mm QFN
75 units / Tube
PE42641MLI-Z
42641
PE42641G-16QFN 3x3mm-3000C
Green 16-lead 3x3mm QFN
3000 units / T&R
©2007-8 Peregrine Semiconductor Corp. All rights reserved.
Page 8 of 9
Document No. 70-0216-05 │ UltraCMOS™ RFIC Solutions
PE42641
Product Specification
Sales Offices
The Americas
Peregrine Semiconductor Corporation
Peregrine Semiconductor, Asia Pacific (APAC)
9380 Carroll Park Drive
San Diego, CA 92121
Tel: 858-731-9400
Fax: 858-731-9499
Shanghai, 200040, P.R. China
Tel: +86-21-5836-8276
Fax: +86-21-5836-7652
Europe
Peregrine Semiconductor Europe
Bâtiment Maine
13-15 rue des Quatre Vents
F-92380 Garches, France
Tel: +33-1-4741-9173
Fax : +33-1-4741-9173
Space and Defense Products
Peregrine Semiconductor, Korea
#B-2607, Kolon Tripolis, 210
Geumgok-dong, Bundang-gu, Seongnam-si
Gyeonggi-do, 463-943 South Korea
Tel: +82-31-728-3939
Fax: +82-31-728-3940
Peregrine Semiconductor K.K., Japan
Teikoku Hotel Tower 10B-6
1-1-1 Uchisaiwai-cho, Chiyoda-ku
Tokyo 100-0011 Japan
Tel: +81-3-3502-5211
Fax: +81-3-3502-5213
Americas:
Tel: 858-731-9453
Europe, Asia Pacific:
180 Rue Jean de Guiramand
13852 Aix-En-Provence Cedex 3, France
Tel: +33-4-4239-3361
Fax: +33-4-4239-7227
For a list of representatives in your area, please refer to our Web site at: www.psemi.com
Data Sheet Identification
Advance Information
The product is in a formative or design stage. The data
sheet contains design target specifications for product
development. Specifications and features may change in
any manner without notice.
Preliminary Specification
The data sheet contains preliminary data. Additional data
may be added at a later date. Peregrine reserves the right
to change specifications at any time without notice in order
to supply the best possible product.
Product Specification
The data sheet contains final data. In the event Peregrine
decides to change the specifications, Peregrine will notify
customers of the intended changes by issuing a DCN
(Document Change Notice).
Document No. 70-0216-05 │ www.psemi.com
The information in this data sheet is believed to be reliable.
However, Peregrine assumes no liability for the use of this
information. Use shall be entirely at the user’s own risk.
No patent rights or licenses to any circuits described in this
data sheet are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in
devices or systems intended for surgical implant, or in other
applications intended to support or sustain life, or in any
application in which the failure of the Peregrine product could
create a situation in which personal injury or death might occur.
Peregrine assumes no liability for damages, including
consequential or incidental damages, arising out of the use of
its products in such applications.
The Peregrine name, logo, and UTSi are registered trademarks
and UltraCMOS, HaRP and MultiSwitch are trademarks of
Peregrine Semiconductor Corp.
©2007-8 Peregrine Semiconductor Corp. All rights reserved.
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