EPIGAP ELC-840-28-1 Led - chip Datasheet

LED - Chip
ELC-840-28-1
Preliminary
10.04.2007
rev. 04/06
Radiation
Type
Technology
Electrodes
Infrared
DDH
AlGaAs/AlGaAs
N (cathode) up
typ. dimensions (µm)
460
360
300
typ. thickness
150 (±25) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
dotted, 25% covered
PD-02
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
1.5
1.7
V
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 100 µA
VR
5
Radiant power1
IF = 20 mA
Φe
2.0
Radiant power2
IF = 20 mA
Φe
Peak wavelength
IF = 20 mA
λp
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
35
nm
Switching time
IF = 20 mA
tr, tf
40
ns
1
2
V
830
3.0
mW
6.0
mW
840
850
nm
Measured on bare chip on TO-18 header with EPIGAP equipment
Measured on epoxy covered chip on TO-18 header with EPIGAP equipment
Labeling
Lot N°
Type
Φe(typ) [mW]
VF(typ) [V]
Quantity
ELС-840-28-1
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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