SMD-LED ELS-870-195 16.11.2007 rev. 04 Radiation Type Technology Case Infrared SMD AlGaAs/AlGaAs SMD 1206 Description all dimensions: m m all tolerances: ± 0,1 High-power, high speed LED in standard SMD package, compact design allows for easy circuit board mounting and assembling of arrays 1,2 0,5 2 pad 1,15 x 1,0 cathode 1,2 Optical communications, remote control, light barriers, measurement applications and security systems, automation 1,0 R 0, 3 1,6 Applications 3,2 Absolute Maximum Ratings at Tamb = 25°C, unless otherwise specified Parameter Test сonditions DC forward current Symbol Value Unit IF 100 mA Peak forward current tp ≤ 50 µs, tp/T ≤ 0.5 IFM 200 mA Surge forward current tp ≤ 10 µs ISFM 2000 mA P 200 mW Operating temperature range Tamb -20 to +85 °C Storage temperature range Tstg -55 to +100 °C Typ Max Unit 1,5 2,0 V Power dissipation Electrical and Optical Characteristics at Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF = 100 mA VF Reverse voltage IF = 100 µA VR 5 Radiant power IF = 100 mA Φe 15 20 Peak wavelength IF = 100 mA λp 865 875 Spectral bandwidth at 50% IF = 100 mA ∆λ0.5 45 nm Viewing angle IF = 100 mA ϕ 120 deg. Switching time IF = 100 mA tr , t f 25 ns V mW 890 nm Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545