ETC1 EM128C08N-10 128kx8 bit ultra-low power asynchronous static ram Datasheet

NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
EM128C08
EM128C08 Family
128Kx8 Bit Ultra-Low Power Asynchronous Static RAM
Overview
Features
The EM128C08 is an integrated memory device
containing a low power 1 Mbit Static Random
Access Memory organized as 131,072 words by 8
bits. The device is fabricated using NanoAmp’s
advanced CMOS process and high-speed/lowpower circuit technology. This device is designed
for very low voltage operation making it quite suitable for battery powered devices.
It is also
designed for both very low operating and standbycurrents. The device pinout is compatible with
other standard 128Kx8 SRAMs.
•
•
•
•
•
•
•
Extremely Wide Operating Voltage
1.5 to 3.6 Volts
Extended Temperature Range
Standard: -20 o to +80oC
Fast Cycle Time
Standard: < 70 ns @ 3 Volts
-10: < 100 ns @ 3 Volts
Very Low Operating Current
ICC < 1 mA maximum at 2V, 1 Mhz
Very Low Data Rentention Voltage
1.2 Volts Minimum
Very Low Standby Current
1 µA max. @ 55oC
32-Pin TSOP, STSOP, SOP and 48-Pin
BGA Packages Available
FIGURE 1: Operating Envelope
20
14 Mhz
15
Typical ICC (mA)
10 Mhz
10
5 Mhz
5
2.5 Mhz
1 Mhz
0
1
2
3
4
VCC (V)
Stock No. 23005-07 6/99
1
NanoAmp Solutions
EM128C08
1
32
VCC
A16
2
31
A15
A14
3
30
CE2
A12
4
29
WE
A7
5
28
A13
A6
6
27
A8
A5
7
26
A9
A4
8
25
A11
A3
9
24
OE
A2
10
23
A10
A1
11
22
CE1
A0
12
21
D7
D0
13
20
D6
D1
14
19
D5
D2
15
18
D4
VSS
16
17
D3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
EM12808
SOP
NC
EM128C08
STSOP, TSOP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
D7
D6
D5
D4
D3
VSS
D2
D1
D0
A0
A1
A2
A3
FIGURE 1: Pin Configurations
1
2
3
4
5
6
A
A5
A7
A16 VCC WE
B
A4
A6
A14 A15 A13 A11
C
NC
A12
NC
NC CE2
A8
D
NC
NC
NC
NC
NC
NC
E
NC
NC
NC
NC
NC
NC
F
A1
D1
NC
NC
D5
CE1
G
A3
A0
D2
D4
D7
OE
H
A2
D0
VSS
D3
D6
A10
A9
48 Pin BGA (top)
7mm x 9mm
FIGURE 2: Functional Block Diagram
Address
Inputs
A0 - A16
Address
Decode
Logic
CE1
CE2
WE
OE
Control
Logic
Input/
Data I/O
Output
Mux
and
D0 - D7
Buffers
128K x 8
RAM Array
TABLE 1: Pin Description
Pin Name
Pin Function
Pin Name
Pin Function
A0-A16
Address Inputs
WE
Write Enable (Active Low)
D0-D7
Data Inputs/Outputs
VCC
Power
CE1
Chip Enable (Active Low)
VSS
Ground
CE2
Chip Enable (Active High)
NC
Not Connected (Do not connect signal)
OE
Output Enable (Active Low)
TABLE 2: Functional Description
CE1
CE2
WE
OE
D0-D7
MODE
POWER
H
X
X
X
High Z
Standby
Standby
X
L
X
X
High Z
Standby
Standby
L
H
L
X
Data In
Write
Active -> Standby*
L
H
H
L
Data Out
Read
Active -> Standby*
L
H
H
H
High Z
Active
Standby*
*The device will consume active power in this mode whenever addresses are changed
Stock No. 23005-07 6/99
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NanoAmp Solutions
EM128C08
TABLE 3: Absolute Maximum Ratings*
Item
Symbol
Rating
Unit
Voltage on any pin relative to V SS
VIN,OUT
–0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to V SS
VCC
–0.3 to 4.0
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
–40 to +125
o
-20 to +80
o
Operating Temperature
TA
C
C
*Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating section of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 4: Operating Characteristics (Over the Specified Temperature Range)
EM128C08
Item
Symbol
Test Conditions
Unit
Min.
Max.
1.5
3.6
Operating Supply Voltage
VCC
Data Retention Voltage
VDR
Input High Voltage
VIH
0.7VCC
VCC+0.3
V
Input Low Voltage
VIL
–0.3
0.3*VCC
V
Output High Voltage
VOH
IOH = -0.1mA
Output Low Voltage
VOL
IOL = 0.1mA
0.2*VCC
V
Input Leakage Current
ILI
VIN = 0 to V CC
0.5
µA
Output Leakage Current
ILO
OE or CE1 = VCC
or CE2 = 0
0.5
µA
Operating Supply Current (Note
1)
ICC
VIN = VCC or 0V
CE1 = 0 and CE2 = V CC
0.5*f*V
mA
VIN=VCC or 0V, tA=25 oC
0.2
Standby Current (Note 2), and
Data Retention
Current
ISB,IDR
CE1 = VCC or CE2 = 0
1.2
V
V
0.8*VCC
V
VIN=VCC or 0V, tA=55
oC
1
VIN=VCC or 0V, tA=80
oC
10
µA
Note 1. Operating current is a linear function of operating frequency and voltage. You may calculate operating current
using the formula shown with operating frequency (f) expressed in Mhz and operating voltage (V) in volts. Example:
Operating at 2 Mhz at 3.0 volts will draw a maximum current of 0.5*2*3 = 3.0 mA.
Note 2. This device assumes a standby mode if either CE1 is disabled (high) or CE2 is disabled (low). It will also
automatically go into a standby mode whenever all input signals are quiescent (not toggling) regardless of the state of
CE1 or CE2. In order to achieve low standby current in the enabled mode (CE1 low and CE2 high), all inputs must be
within 0.2 volts of either V CC or VSS.
TABLE 5: Capacitance*
Item
Input Capacitance
I/O Capacitance
Symbol
C IN
C I/O
Test Condition
Max
Unit
VIN = 0V, f = 1 Mhz, T A =
25oC
Min
5
pF
VIN = 0V, f = 1 Mhz, T A =
25oC
5
pF
Note: These parameters are verified in device characterization and are not 100% tested
Stock No. 23005-07 6/99
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NanoAmp Solutions
EM128C08
TABLE 6: Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5VCC
Operating Temperature - Standard Version
-40 to +85 oC
Operating Temperature - Commercial Version
-20 to +80 oC
Output Load
CL = 50pF
TABLE 7: Timing - EM128C08 (Standard Version) Only
1.5 to 3.6 V 1.8 to 3.6 V 2.7 to 3.6 V 3.0 to 3.6 V
Item
Symbol
Unit
Min
Max
Max
200
Min
Max
Max
tRC
Address Access Time
tAA
500
200
85
70
ns
Chip Enable Access Time
tCE
500
200
85
70
ns
Output Enable to Valid Output
tOE
100
50
20
20
ns
Chip Enable to Low-Z output
tLZ
0
0
0
0
ns
Output Enable to Low-Z Output
tOLZ
0
0
0
0
ns
Chip Disable to High-Z Output
tHZ
0
100
0
50
0
20
0
20
ns
Output Disable to High-Z Output
tOHZ
0
100
0
50
0
20
0
20
ns
Output Hold from Address Change
tOH
10
10
10
10
ns
Write Cycle Time
tWC
500
200
85
70
ns
Chip Enable to End of Write
tCW
500
200
85
70
ns
Address Valid to End of Write
tAW
500
200
85
70
ns
Address Set-Up Time
tAS
0
0
0
0
ns
Write Pulse Width
tWP
250
100
40
35
ns
Write Recovery Time
tWR
Write to High-Z Output
tWHZ
0
Data to Write Time Overlap
tDW
200
80
40
30
ns
Data Hold from Write Time
tDH
0
0
0
0
ns
End Write to Low-Z Output
tOW
10
10
10
10
ns
0
50
85
Min
Read Cycle Time
Stock No. 23005-07 6/99
500
Min
0
0
40
70
0
0
20
0
ns
0
ns
20
ns
4
NanoAmp Solutions
EM128C08
TABLE 8: Timing - EM128C08-10 Version
1.5 to 3.6 V 1.8 to 3.6 V 2.7 to 3.6 V 3.0 to 3.6 V
Item
Symbol
Unit
Min
Max
500
Min
Max
300
Min
Max
Max
Read Cycle Time
tRC
Address Access Time
tAA
500
300
120
100
ns
Chip Enable Access Time
tCE
500
300
120
100
ns
Output Enable to Valid Output
tOE
100
60
25
25
ns
Chip Enable to Low-Z output
tLZ
0
0
0
0
ns
Output Enable to Low-Z Output
tOLZ
0
0
0
0
ns
Chip Disable to High-Z Output
tHZ
0
100
0
60
0
25
0
25
ns
Output Disable to High-Z Output
tOHZ
0
100
0
60
0
25
0
25
ns
Output Hold from Address Change
tOH
10
10
10
10
ns
Write Cycle Time
tWC
500
300
120
100
ns
Chip Enable to End of Write
tCW
500
300
120
100
ns
Address Valid to End of Write
tAW
500
300
120
100
ns
Address Set-Up Time
tAS
0
0
0
0
ns
Write Pulse Width
tWP
300
100
50
40
ns
Write Recovery Time
tWR
Write to High-Z Output
tWHZ
0
Data to Write Time Overlap
tDW
300
80
40
30
ns
Data Hold from Write Time
tDH
0
0
0
0
ns
End Write to Low-Z Output
tOW
10
10
10
10
ns
0
120
Min
0
100
0
60
100
0
0
25
0
ns
0
ns
25
ns
FIGURE 3: Read Cycle Timing (WE = VIH)
tRC
A0-A16
tAA
tHZ
tCE
CE1/CE2
Enable Valid
tLZ
tOHZ
tOE
OE
tOLZ
D0-D7
Stock No. 23005-07 6/99
tOH
Data Valid
5
NanoAmp Solutions
EM128C08
FIGURE 4: Write Cycle Timing (OE clock)
tWC
A0-A16
tWR
tAW
OE
tCW
Enable Valid
CE1/CE2
tWP
WE
tWHZ
tAS
tDH
tDW
Data
Data In
tOHZ
tOW
High-Z
Data Out
FIGURE 5: Write Cycle Timing (OE fixed)
tWC
A0-A16
tWR
tAW
tCW
CE1/CE2
Enable Valid
tWP
tAS
tOH
WE
tDH
tDW
Data Valid
Data In
tWHZ
Data Out
Stock No. 23005-07 6/99
tOW
High-Z
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NanoAmp Solutions
EM128C08
TABLE 9: Ordering Information
Part Number
Package
Temperature
Range
Voltage
Range
Speed (@ 3V+)
EM128C08S
32 pin SOP
-20 to +80 oC
EM128C08T
32 pin TSOP
EM128C08N
32 pin STSOP
EM128C08B
48 pin BGA
EM128C08S-10
32 pin SOP
EM128C08T-10
32 pin TSOP
EM128C08N-10
32 pin STSOP
EM128C08B-10
48 pin BGA
1.5 to 3.6 V
70 ns
o
1.5 to 3.6 V
70 ns
o
1.5 to 3.6 V
70 ns
o
1.5 to 3.6 V
70 ns
o
1.5 to 3.6 V
100 ns
o
1.5 to 3.6 V
100 ns
o
1.5 to 3.6 V
100 ns
o
1.5 to 3.6 V
100 ns
-20 to +80 C
-20 to +80 C
-20 to +80 C
-20 to +80 C
-20 to +80 C
-20 to +80 C
-20 to +80 C
TABLE 10: Revision History
Revision #
Date
01
Nov. 1, 1997
Initial Formal Release
02
Feb. 2, 1998
Corrected Miscellaneous Errata
Modified Cycle Time and Related Parameters from 150 to 200 nS at 1.8 volts
03
Feb. 15, 1998
Added SOP option, Increased standby current
04
Apr. 1, 1998
Clarified CE2 Timing in Figures 3 to 5
Modified Operating Envelope Figure
05
Sep. 1, 1998
Reduced product versions to Standard and Commercial
Added BGA option, Extended “standard” voltage range to 1.5 Volts min.
06
May 6, 1999
Standardized on voltage range of 1.5 to 3.6 volts
Standardized on temperature range of -20 to 80 oC
07
June 3, 1999
Revised specifications to show -10 instead of “C” for 100 ns part
Stock No. 23005-07 6/99
Change Description
7
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